DMG6898LSDQ-13 Datasheet DMG6898LSD-13, DMG6898LSDQ-13 | P1-P3

DMG6898LSD

Document number: DS31947 Rev. 6 - 2

1 of 6

www.diodes.com

November 2014

DMG6898LSD

NEW PROD UCT

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Product Summary

V

(BR)DSS

R

DS(on)

max

I

D

max

T

A

= +25°C

30V

16mΩ @ V

GS

= 10V

9.8A

23mΩ @ V

GS

= 4.5V

8.7A

Description

This MOSFET is designed to minimize the on-state resistance

(R

DS(on)

) and yet maintain superior switching performance, making it

ideal for high efficiency power management applications.

Applications

 Backlighting

 Power Management Functions

 DC-DC Converters

Features

 Low On-Resistance

 Low Input Capacitance

 Fast Switching Speed

 Low Input/Output Leakage

 ESD Protected Up To 2kV

 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

 Halogen and Antimony Free. “Green” Device (Note 3)

 Qualified to AEC-Q101 Standards for High Reliability

 PPAP Capable (Note 4)

Mechanical Data

 Case: SO-8

 Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

 Moisture Sensitivity: Level 1 per J-STD-020

 Terminal Connections: See Diagram Below

 Weight: 0.072 grams (Approximate)

Ordering Information (Notes 4 & 5)

Part Number

Qualification

Case

Packaging

DMG6898LSD-13

Commercial

SO-8

2,500 / Tape & Reel

DMG6898LSDQ-13

Automotive

SO-8

2,500 / Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"

and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and

<1000ppm antimony compounds.

4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally

the same, except where specified. For more information, please refer to http://www.diodes.com/quality/product_compliance_definitions/.

5. For packaging details, go to our website at http://www.diodes.com/products/packages.html.

Marking Information

Top View

Internal Schematic

D1

G2

G1

D2

S1

S2

D1

D2

ESD PROTECTED TO 2kV

1

4

8

5

G6898LD

YY

WW

= Manufacturer’s Marking

G6898LD = Product Type Marking Code

YYWW = Date Code Marking

YY or YY = Year (ex: 14 = 2014)

WW = Week (01 - 53)

DMG6898LSD

Document number: DS31947 Rev. 6 - 2

2 of 6

www.diodes.com

November 2014

DMG6898LSD

NEW PROD UCT

Maximum Ratings @T

A

= +25°C unless otherwise specified

Characteristic

Symbol

Value

Unit

Drain-Source Voltage

V

DSS

20

V

Gate-Source Voltage

V

GSS

±12

V

Continuous Drain Current (Note 6)

Steady

State

T

A

= +25°C

T

A

= +85°C

I

D

9.5

7.1

A

Pulsed Drain Current (Note 7)

I

DM

30

A

Thermal Characteristics

Characteristic

Symbol

Value

Unit

Power Dissipation (Note 6)

P

D

1.28

W

Thermal Resistance, Junction to Ambient @T

A

= +25°C (Note 6)

R

θJA

99.3

°C/W

Operating and Storage Temperature Range

T

J

, T

STG

-55 to +150

°C

Electrical Characteristics @T

A

= +25°C unless otherwise specified

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 8)

Drain-Source Breakdown Voltage

BV

DSS

20

-

V

GS

= 0V, I

D

= 250μA

Zero Gate Voltage Drain Current T

J

= +25°C

I

DSS

-

1.0

μA

V

DS

= 20V, V

GS

= 0V

Gate-Source Leakage

I

GSS

-

±10

μA

V

GS

= ±12V, V

DS

= 0V

ON CHARACTERISTICS (Note 8)

Gate Threshold Voltage

V

GS(th)

0.5

1.0

1.5

V

DS

= V

GS

, I

D

= 250μA

Static Drain-Source On-Resistance

R

DS (ON)

-

11

17

16

23

mΩ

V

GS

= 4.5V, I

D

= 9.4A

V

GS

= 2.5V, I

D

= 8.3A

Forward Transfer Admittance

|Y

fs

|

-

17

-

S

V

DS

= 5V, I

D

= 9.4A

Diode Forward Voltage

V

SD

-

0.7

1.2

V

GS

= 0V, I

S

= 1.3A

DYNAMIC CHARACTERISTICS (Note 9)

Input Capacitance

C

iss

-

1149

-

pF

V

DS

= 10V, V

GS

= 0V,

f = 1.0MHz

Output Capacitance

C

oss

-

157

-

pF

Reverse Transfer Capacitance

C

rss

-

142

-

pF

Gate Resistance

R

g

-

1.51

-

Ω

V

DS

= 0V, V

GS

= 0V, f = 1MHz

Total Gate Charge (V

GS

= 4.5V)

Q

g

-

11.6

-

nC

V

GS

= 4.5V, V

DS

= 10V,

I

D

= 9.4A

Total Gate Charge (V

GS

= 10V)

Q

g

-

26

-

nC

Gate-Source Charge

Q

gs

-

2.7

-

nC

Gate-Drain Charge

Q

gd

-

3.4

-

nC

Turn-On Delay Time

t

D(on)

-

11.67

-

ns

V

DD

= 10V, V

GS

= 4.5V,

R

GEN

= 6Ω, I

D

= 1A

Turn-On Rise Time

t

r

-

12.49

-

ns

Turn-Off Delay Time

t

D(off)

-

35.89

-

ns

Turn-Off Fall Time

t

f

-

12.33

-

ns

Notes: 6. Device mounted on FR-4 PCB, with minimum recommended pad layout.

7. Repetitive rating, pulse width limited by junction temperature.

8. Short duration pulse test used to minimize self-heating effect.

9. Guaranteed by design. Not subject to production testing.

DMG6898LSD

Document number: DS31947 Rev. 6 - 2

3 of 6

www.diodes.com

November 2014

DMG6898LSD

NEW PROD UCT

0

5

10

15

20

0 0.5 1 1.5 2

Fig. 1 Typical Output Characteristic

V , DRAIN-SOURCE VOLTAGE (V)

DS

V = 2.0V

GS

V = 1.8V

GS

V = 1.5V

GS

V = 2.5V

GS

V = 3.0V

GS

V = 4.5V

GS

V = 8.0V

GS

I , DRAIN CURRENT (A)

D

0

5

10

15

20

0 0.5 1 1.5 2 2.5 3

I , DRAIN CURRENT (A)

D

Fig. 2 Typical Transfer Characteristic

V , GATE-SOURCE VOLTAGE (V)

GS

T = -55°C

A

T = 25°C

A

T = 85°C

A

T = 125°C

A

T = 150°C

A

V = 10V

DS

0

0.01

0.02

0.03

0.04

0.05

0.06

0 2 4 6 8 10 12 14 16 18 20

Fig. 3 Typical On-Resistance

vs. Drain Current and Gate Voltage

I , DRAIN-SOURCE CURRENT (A)

D

R , DRAIN-SOURCE ON-RESISTANCE ( )

DS(ON)



V = 4.5V

GS

V = 2.5V

GS

V = 1.8V

GS

0

0.01

0.02

0.03

0.04

0 2 4 6 8 10 12 14 16 18 20

I , DRAIN CURRENT (A)

D

Fig. 4 Typical On-Resistance

vs. Drain Current and Temperature

R , DRAIN-SOURCE ON-RESISTANCE ( )

DS(ON)



T = -55°C

A

T = 25°C

A

T = 85°C

A

T = 125°C

A

T = 150°C

A

V = 4.5V

GS

0.4

0.6

0.8

1.0

1.2

1.4

1.6

Fig. 5 On-Resistance Variation with Temperature

-50 -25 0 25 50 75 100 125 150

T , AMBIENT TEMPERATURE (°C)

A

R , DRAIN-SOURCE

ON-RESISTANCE (NORMALIZED)

DSON

V = 4.5V

I = 500mA

GS

D

V = 2.5V

I = 150mA

GS

D

0

0.01

0.02

0.03

0.04

R , DRAIN-SOURCE ON-RESISTANCE ( )

DSON



Fig. 6 On-Resistance Variation with Temperature

-50 -25 0 25 50 75 100 125 150

T , AMBIENT TEMPERATURE (°C)

A

V = 2.5V

I = 150mA

GS

D

V = 4.5V

I = 500mA

GS

D

DMG6898LSDQ-13

DMG6898LSDQ-13

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