BCR108SH6327XTSA1

2007-07-24
1
BCR108...
NPN Silicon Digital Transistor
Switching circuit, inverter, interface circuit,
driver circuit
Built in bias resistor (R
1
=2.2 k, R
2
=47 k)
BCR108S: Two internally isolated
transistors with good matching
in one multichip package
BCR108S: For orientation in reel see
package information below
Pb-free (RoHS compliant) package
1)
Qualified according AEC Q101
BCR108/F
BCR108T/W
BCR108S
EHA07184
3
21
C
EB
R
1
R
2
EHA07174
6 54
321
C1 B2 E2
C2B1E1
1
R
R
2
R
1
R
2
TR1
TR2
Type Marking Pin Configuration Package
BCR108
BCR108F
BCR108S
BCR108W
WHs
WHs
WHs
WHs
1=B
1=B
1=E1
1=B
2=E
2=E
2=B1
2=E
3=C
3=C
3=C2
3=C
-
-
4=E2
-
-
-
5=B2
-
-
-
6=C1
-
SOT23
TSFP-3
SOT363
SOT323
1
Pb-containing package may be available upon special request
2007-07-24
2
BCR108...
Maximum Ratings
Parameter
Symbol Value Unit
Collector-emitter voltage V
CEO
50 V
Collector-base voltage V
CBO
50
Input forward voltage V
i(fwd)
20
Input reverse voltage V
i(rev)
5
Collector current I
C
100 mA
Total power dissipation-
BCR108, T
S
102°C
BCR108F, T
S
128°C
BCR108S, T
S
115°C
BCR108W, T
S
124°C
P
tot
200
250
250
250
mW
Junction temperature T
j
150 °C
Storage temperature T
stg
-65 ... 150
Thermal Resistance
Parameter
Symbol Value Unit
Junction - soldering point
1)
BCR108
BCR108F
BCR108S
BCR108W
R
thJS
240
90
140
105
K/W
1
For calculation of R
thJA
please refer to Application Note Thermal Resistance
2007-07-24
3
BCR108...
Electrical Characteristics at T
A
= 25°C, unless otherwise specified
Parameter
Symbol Values Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
I
C
= 100 µA, I
B
= 0
V
(BR)CEO
50 - -
V
Collector-base breakdown voltage
I
C
= 10 µA, I
E
= 0
V
(BR)CBO
50 - -
Collector-base cutoff current
V
CB
= 40 V, I
E
= 0
I
CBO
- - 100 nA
Emitter-base cutoff current
V
EB
= 5 V, I
C
= 0
I
EBO
- - 164 µA
DC current gain
1)
I
C
= 5 mA, V
CE
= 5 V
h
FE
70 - - -
Collector-emitter saturation voltage
1)
I
C
= 10 mA, I
B
= 0.5 mA
V
CEsat
- - 0.3 V
Input off voltage
I
C
= 100 µA, V
CE
= 5 V
V
i(off)
0.4 - 0.8
Input on voltage
I
C
= 2 mA, V
CE
= 0.3 V
V
i(on)
0.5 - 1.1
Input resistor R
1
1.5 2.2 2.9 k
Resistor ratio R
1
/R
2
0.042 0.047 0.052 -
AC Characteristics
Transition frequency
I
C
= 10 mA, V
CE
= 5 V, f = 1 MHz
f
T
- 170 - MHz
Collector-base capacitance
V
CB
= 10 V, f = 1 MHz
C
cb
- 2 - pF
1
Pulse test: t < 300µs; D < 2%

BCR108SH6327XTSA1

Mfr. #:
Manufacturer:
Infineon Technologies
Description:
Bipolar Transistors - Pre-Biased AF DIGITAL TRANSISTORS
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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