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SMMSD914T1G

P1-P3P4-P4
© Semiconductor Components Industries, LLC, 2012
November, 2012 − Rev. 11
1 Publication Order Number:
MMSD914T1/D
MMSD914, SMMSD914
Switching Diode
Features
• SOD−123 Surface Mount Package
• High Breakdown Voltage
• Fast Speed Switching Time
• S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant*
MAXIMUM RATINGS
Rating Symbol Value Unit
Continuous Reverse Voltage V
R
100 Vdc
Peak Forward Current I
F
200 mAdc
Peak Forward Surge Current I
FM(surge)
500 mAdc
Non−repetitive Peak
Forward Surge Current
Pulse Width =1 second
Pulse Width =1 micro second
I
FSM
1.0
2.0
A
A
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR−5 Board
(Note 1)
T
A
= 25°C
Derate above 25°C
P
D
425
3.4
mW
mW/°C
Thermal Resistance,
Junction−to−Ambient
R
q
JA
290
°C/W
Junction and Storage Temperature Range T
J
, T
stg
−55 to
+150
°C
1. FR−5 = 1.0oz Cu, 1.0in
z
pad
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques Reference
Manual, SOLDERRM/D.
http://onsemi.com
SOD−123
CASE 425
PLASTIC
1
CATHODE
2
ANODE
Device Package Shipping
†
ORDERING INFORMATION
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
MMSD914T1G SOD−123
(Pb−Free)
3,000 / Tape & Reel
MMSD914T3G SOD−123
(Pb−Free)
10,000 / Tape & Reel
MARKING DIAGRAM
5D M G
G
5D = Specific Device Code
M = Date Code
G = Pb−Free Package
(Note: Microdot may be in either location)
12
SMMSD914T1G SOD−123
(Pb−Free)
3,000 / Tape & Reel
SMMSD914T3G SOD−123
(Pb−Free)
10,000 / Tape & Reel
MMSD914, SMMSD914
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Reverse Breakdown Voltage (I
BR
= 100 mAdc) V
(BR)
100 − Vdc
Reverse Voltage Leakage Current
(V
R
= 20 Vdc)
(V
R
= 75 Vdc)
I
R
−
−
25
5.0
nAdc
mAdc
Forward Voltage (I
F
= 10 mAdc) V
F
− 1000 mVdc
Diode Capacitance (V
R
= 0 Vdc, f = 1.0 MHz) C
D
− 4.0 pF
Reverse Recovery Time (I
F
= I
R
= 10 mAdc) (Figure 1) t
rr
− 4.0 ns
Notes: 1. A 2.0 kW variable resistor adjusted for a Forward Current (I
F
) of 10 mA.
Notes: 2. Input pulse is adjusted so I
R(peak)
is equal to 10 mA.
Notes: 3. t
p
» t
rr
+10 V
2 k
820 W
0.1 mF
DUT
V
R
100 mH
0.1 mF
50 W OUTPUT
PULSE
GENERATOR
50 W INPUT
SAMPLING
OSCILLOSCOPE
t
r
t
p
t
10%
90%
I
F
I
R
t
rr
t
i
R(REC)
= 1 mA
OUTPUT PULSE
(I
F
= I
R
= 10 mA; measured
at i
R(REC)
= 1 mA)
I
F
INPUT SIGNAL
Figure 1. Recovery Time Equivalent Test Circuit
MMSD914, SMMSD914
http://onsemi.com
3
I
R
, REVERSE CURRENT (A)μ
100
0.2 0.4
V
F
, FORWARD VOLTAGE (VOLTS)
0.6 0.8 1.0
1.2
10
1.0
0.1
T
A
= 85°C
10
0
V
R
, REVERSE VOLTAGE (VOLTS)
1.0
0.1
0.01
0.001
10 20 30 40 50
0.68
0
V
R
, REVERSE VOLTAGE (VOLTS)
0.64
0.60
0.56
0.52
C
D
, DIODE CAPACITANCE (pF)
246 8
I
F
, FORWARD CURRENT (mA)
T
A
= 25°C
T
A
= -40°C
T
A
= 150°C
T
A
= 125°C
T
A
= 85°C
T
A
= 55°C
T
A
= 25°C
Figure 2. Forward Voltage Figure 3. Leakage Current
Figure 4. Capacitance
P1-P3P4-P4

SMMSD914T1G

Mfr. #:
Buy SMMSD914T1G
Manufacturer:
ON Semiconductor
Description:
Diodes - General Purpose, Power, Switching SS SWCH DIO 100V
Lifecycle:
New from this manufacturer.
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