Product Standards
Transistors with Built-in Resistor
DRA5L14Y0L
Absolute Maximum Ratings Ta = 25 C
Electrical Characteristics Ta = 25 C 3 C
Note
1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 Measuring methods for transistors.
Page
0.27
k
-0.5 V
-
0.213
V
+30%
-1.5
Input resistance R1 -30%
Resistance ratio R1/R2 0.16
(EU RoHS / UL-94 V-0 / MSL:Level 1 compliant)
10
Input voltage
Vi(on) VCE = -0.2 V, IC = -5 mA
Vi(off) VCE = -5 V, IC = -100 μA
hFE VCE = -10 V, IC = -5 mA -
Collector-emitter saturation voltage VCE(sat) IC = -50 mA, IB = -0.33 mA -0.6 -1.2 V
Forward current transfer ratio 80
ICEO VCE = -30 V, IB = 0 -0.5 μA
Emitter-base cutoff current (Collector open)
IEBO VEB = -3 V, IC = 0 -0.1 mA
Collector-emitter cutoff current (Base open)
V
Collector-base cutoff current (Emitter open)
ICBO VCB = -30 V, IE = 0 -0.1 μA
Collector-emitter voltage (Base open) VCEO IC = -2 mA, IB = 0 -30
Max Unit
Collector-base voltage (Emitter open) VCBO IC = -10 μA, IE = 0 -30 V
Parameter Symbol Conditions
Storage temperature Tstg -55 to +150 °C
IC -100 mA
Junction temperature Tj 150 °C
Collector-base voltage (Emitter open) VCBO -30 V
k
Collector-emitter voltage (Base open) VCEO -30 V
Total power dissipation PT 150 mW
Collector current
of 3
Unit: mm
Min Typ
Internal Connection
Low collector-emitter saturation voltage Vce(sat)
Halogen-free / RoHS compliant
High forward current transfer ratio hFE
1
Resistance
value
R1
10
k
R2 47
SC-85
Collector
DRA5L14Y0L
Silicon PNP epitaxial planar type
For digital circuits
DRA2L14Y in SMini3 type package
Features
Packaging
Marking Symbol:
Code
Base
Emitter
―
Panasonic SMini3-F2-B
JEITA
Parameter Symbol Rating Unit
K4
1.
2.
3.
Embossed type (Thermo-compression sealing) : 3 000 pcs / reel (standard)
+85 °COperating ambient temperature Topr -40 to
C
B
R
1
R
2
E
2.1
2.0
0.9
1.25
1.3
(0.65)
0.130.3
12
3
(0.65)
