RURD4120S9A

©2002 Fairchild Semiconductor Corporation RURD4120, RURD4120S Rev. B
RURD4120, RURD4120S
4A, 1200V Ultrafast Diodes
The RURD4120 and RURD4120S are ultrafast diodes with
soft recovery characteristics (t
rr
< 70ns). They have low
forward voltage drop and are silicon nitride passivated
ion-implanted epitaxial planar construction.
These devices are intended for use as freewheeling/
clamping diodes and rectifiers in a variety of switching power
supplies and other power switching applications. Their low
stored charge and ultrafast soft recovery minimize ringing
and electrical noise in many power switching circuits
reducing power loss in the switching transistors.
Formerly developmental type TA49036.
Symbol
Features
Ultrafast with Soft Recovery. . . . . . . . . . . . . . . . . . . <70ns
Operating Temperature . . . . . . . . . . . . . . . . . . . . . . 175
o
C
Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1200V
Avalanche Energy Rated
Planar Construction
Applications
Switching Power Supplies
Power Switching Circuits
General Purpose
Packaging
JEDEC STYLE TO-251
JEDEC STYLE TO-252
Ordering Information
PART NUMBER PACKAGE BRAND
RURD4120 TO-251 UR4120
RURD4120S TO-252 UR4120
NOTE: When ordering, use the entire part number. Add the suffix 9A
to obtain the TO-252 variant in the tape and reel, i.e.,
RURD4120S9A.
K
A
ANODE
CATHODE
CATHODE
(FLANGE)
ANODE
CATHODE
CATHODE
(FLANGE)
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
RURD4120, RURD4120S UNITS
Peak Repetitive Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
RRM
1200 V
Working Peak Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
RWM
1200 V
DC Blocking Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
R
1200 V
Average Rectified Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
F(AV)
(T
C
= 152
o
C)
4A
Repetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
FRM
(Square Wave, 20kHz)
8A
Nonrepetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
FSM
(Halfwave, 1 Phase, 60Hz)
40 A
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
50 W
Avalanche Energy (See Figures 10 and 11). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
AVL
10 mJ
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
STG
, T
J
-65 to 175
o
C
Data Sheet January 2002
©2002 Fairchild Semiconductor Corporation RURD4120, RURD4120S Rev. B
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
SYMBOL TEST CONDITION MIN TYP MAX UNITS
V
F
I
F
= 4A - - 2.1 V
I
F
= 4A, T
C
= 150
o
C - - 1.9 V
I
R
V
R
= 1200V - - 100
µ
A
V
R
= 1200V, T
C
= 150
o
C - - 500
µ
A
t
rr
I
F
= 1A, dI
F
/dt = 200A/
µ
s--70ns
I
F
= 4A, dI
F
/dt = 200A/
µ
s--90ns
t
a
I
F
= 4A, dI
F
/dt = 200A/
µ
s - 40 - ns
t
b
I
F
= 4A, dI
F
/dt = 200A/
µ
s - 28 - ns
Q
RR
I
F
= 4A, dI
F
/dt = 200A/
µ
s - 335 - nC
C
J
V
R
= 10V, I
F
= 0A - 15 - pF
R
θ
JC
--3
o
C/W
DEFINITIONS
V
F
= Instantaneous forward voltage (pw = 300
µ
s, D = 2%).
I
R
= Instantaneous reverse current.
t
rr
= Reverse recovery time (See Figure 9), summation of t
a
+ t
b
.
t
a
= Time to reach peak reverse current (See Figure 9).
t
b
= Time from peak I
RM
to projected zero crossing of I
RM
based on a straight line from peak I
RM
through 25% of I
RM
(See Figure 9).
Q
RR
= Reverse recovery time.
C
J
= Junction capacitance.
R
θ
JC
= Thermal resistance junction to case.
pw = Pulse width.
D = Duty cycle.
Typical Performance Curves
FIGURE 1. FORWARD CURRENT vs FORWARD VOLTAGE
FIGURE 2. REVERSE CURRENT vs REVERSE VOLTAGE
V
F
, FORWARD VOLTAGE (V)
I
F
, FORWARD CURRENT (A)
1
20
0.5
10
0 0.5 1 1.5 2 2.5 3
25
o
C
175
o
C
100
o
C
V
R
, REVERSE VOLTAGE (V)
0 400 800 1200600 1000
100
0.01
0.1
1
10
I
R
, REVERSE CURRENT (µA)
200
0.001
25
o
C
100
o
C
175
o
C
RURD4120, RURD4120S
©2002 Fairchild Semiconductor Corporation RURD4120, RURD4120S Rev. B
FIGURE 3. t
rr
, t
a
AND t
b
CURVES vs FORWARD CURRENT FIGURE 4. t
rr
, t
a
AND t
b
CURVES vs FORWARD CURRENT
FIGURE 5. t
rr
, t
a
AND t
b
CURVES vs FORWARD CURRENT FIGURE 6. CURRENT DERATING CURVE
FIGURE 7. JUNCTION CAPACITANCE vs REVERSE VOLTAGE
Typical Performance Curves
(Continued)
I
F
, FORWARD CURRENT (A)
0.5
0
45
30
15
75
41
t
rr
60
t, RECOVERY TIMES (ns)
t
b
t
a
T
C
= 25
o
C, dI
F
/dt = 200A/µs
0.5
0
60
100
41
t, RECOVERY TIMES (ns)
I
F
, FORWARD CURRENT (A)
t
b
80
20
t
rr
t
a
40
T
C
= 100
o
C, dI
F
/dt = 200A/µs
0.5
0
25
125
41
t
rr
t
b
100
t
a
t, RECOVERY TIMES (ns)
I
F
, FORWARD CURRENT (A)
50
75
T
C
= 175
o
C, dI
F
/dt = 200A/µs
5
1
0
125 135 155 175165
2
3
4
T
C
, CASE TEMPERATURE (
o
C)
I
F(AV)
, AVERAGE FORWARD CURRENT (A)
145
DC
SQ. WAVE
V
R
, REVERSE VOLTAGE (V)
30
15
0
0 50 100 150 200
75
C
J
, JUNCTION CAPACITANCE (pF)
60
45
RURD4120, RURD4120S

RURD4120S9A

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
DIODE GEN PURP 1.2KV 4A DPAK
Lifecycle:
New from this manufacturer.
Delivery:
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