VS-GB150TS60NPbF
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Vishay Semiconductors
Revision: 10-Jun-15
5
Document Number: 94502
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Fig. 11 - Typical Diode I
rr
vs. I
F
T
J
= 125 °C
Fig. 12 - Typical Diode I
rr
vs. R
g
T
J
= 125 °C, I
F
= 150 A
Fig. 13 - Typical Diode I
rr
vs. dI
F
/dt
T
J
= 125 °C, V
CC
= 360 V, I
F
= 150 A, V
GE
= 15 V
Fig. 14 - Typical Switching Losses vs. Gate Resistance,
T
J
= 125 °C, L = 200 μH, R
g
= 10 , V
CC
= 360 V, V
GE
= 15 V
Fig. 15 - Typical Switching Losses vs. Junction Temperature;
L = 200 μH, R
g
= 10 , V
CC
= 360 V, V
GE
= 15 V
Fig. 16 - Typical Switching Losses vs. Collector to Emitter Current;
T
J
= 125 °C, R
g1
= 10 , R
g2
= 0 , V
CC
= 360 V, V
GE
= 15 V
I
RR
(A)
I
F
(A)
40 60 80 100 120 140 160
20
30
40
50
60
70
80
90
100
10 ohm
27 ohm
47 ohm
0 1020304050
20
40
60
80
100
I
RR
(A)
R
G
( Ω)
200 400 600 800 1000 1200 1400
50
60
70
80
90
I
RR
(A)
dI
F
/ dt (A/μs)
0 1020304050
6
7
8
9
10
11
12
13
14
15
16
17
Total Switching Losses (mJ)
R
G
( Ω)
0255075100125
1
10
Ic = 150A
Ic = 100A
Ic = 75A
Total Switching Losses (mJ)
T
J
- Junction Temperature (°C)
04080120160
0
1
2
3
4
5
6
7
8
Total Switching Losses (mJ)
I
C
(A)
