FJL6825ATU Datasheet FJL6825ATU, FJL6825TU | P1-P3

FJL6825

1

NPN Triple Diffused Planar Silicon Transistor

Absolute Maximum Ratings

T

C

=25°C unless otherwise noted

* Pulse Test: PW=300µs, duty Cycle=2% Pulsed

Electrical Characteristics

T

C

=25°C unless otherwise noted

* Pulse Test: PW=20µs, duty Cycle=1% Pulsed

Thermal Characteristics

T

C

=25°C unless otherwise noted

Symbol Parameter Rating Units

V

CBO

Collector-Base Voltage 1500 V

V

CEO

Collector-Emitter Voltage 750 V

V

EBO

Emitter-Base Voltage 6 V

I

C

Collector Current (DC) 25 A

I

CP

* Collector Current (Pulse) 35 A

P

C

Collector Dissipation 200 W

T

J

Junction Temperature 150 °C

T

STG

Storage Temperature -55 ~ 150 °C

Symbol Parameter Test Conditions Min. Typ. Max. Units

I

CES

Collector Cut-off Current V

CB

=1400V, R

BE

=0 1 mA

I

CBO

Collector Cut-off Current V

CB

=800V, I

E

=0 10 µA

I

EBO

Emitter Cut-off Current V

EB

=4V, I

C

=0 1 mA

BV

CBO

Collector-Base Breakdown Voltage I

C

=500µA, I

E

=0 1500 V

BV

CEO

Collector-Emitter Breakdown Voltage I

C

=5mA, I

B

=0 750 V

BV

EBO

Emitter-Base Breakdown Voltage I

E

=500µA, I

C

=0 6 V

h

FE1

h

FF2

DC Current Gain V

CE

=5V, I

C

=1A

V

CE

=5V, I

C

=12A

10

69

V

CE

(sat) Collector-Emitter Saturation Voltage I

C

=12A, I

B

=3A 3 V

V

BE

(sat) Base-Emitter Saturation Voltage I

C

=12A, I

B

=3A 1.5 V

t

STG

* Storage Time V

CC

=200V, I

C

=12A, R

L

=17

Ω

I

B1

=2.4A, I

B2

= - 4.8A

3 µs

t

F

* Fall Time 0.15 0.2 µs

Symbol Parameter Typ Max Units

R

θjC

Thermal Resistance, Junction to Case 0.625 °C/W

FJL6825

High Voltage Color Display Horizontal

Deflection Output

• High Collector-Base Breakdown Voltage : BV

CBO

= 1500V

• Low Saturation Voltage : V

CE

(sat) = 3V (Max.)

• For Color Monitor

TO-264

1.Base 2.Collector 3.Emitter

FJL6825

Typical Characteristics

Figure 1. Static Characteristics Figure 2. DC Current Gain

Figure 3. Collector-Emitter Saturation Voltage Figure 4. Collector-Emitter Saturation Voltage

Figure 5. Base-Emitter On Voltage Figure 6. Resistive Load Switching Time

024681012

0

2

4

6

8

10

12

14

16

I

B

=2.0A

I

B

=0.6A

I

B

=0.4A

I

B

=0.2A

I

C

[A], COLLECTOR CURRENT

V

CE

[V], COLLECTOR-EMITTER VOLTAGE

0.1 1 10 100

1

10

100

V

CE

= 5V

Ta = 125

0

C

Ta = 25

0

C

Ta= - 25

0

C

h

FE

, DC CURRENT GAIN

I

C

[A], COLLECTOR CURRENT

0.1 1 10 100

0.01

0.1

1

I

C

= 3 I

B

Ta = 125

0

C

Ta = 25

0

C

Ta =- 25

0

C

V

CE

(sat) [V], SATURATION VOLTAGE

I

C

[A], COLLECTOR CURRENT

0.1 1 10 100

0.01

0.1

1

10

I

C

= 5 I

B

Ta = 125

0

C

Ta = 25

0

C

Ta = - 25

0

C

V

CE

(sat) [V], SATURATION VOLTAGE

I

C

[A], COLLECTOR CURRENT

0.00.20.40.60.81.01.2

0

2

4

6

8

10

12

14

16

V

CE

= 5V

- 25

0

C

25

0

C

Ta = 125

0

C

I

C

[A], COLLECTOR CURRENT

V

BE

[V], BASE-EMITTER VOLTAGE

110

0.1

1

10

I

B1

= 2.4A, V

CC

= 200V

I

C

= 12A

t

STG

t

F

t

STG

& t

F

[

µ

s], SWITCHING TIME

I

B2

[A], REVERSE BASE CURRENT

FJL6825

Typical Characteristics

(Continued)

Figure 7. Resistive Load Switching Time Figure 8. Resistive Load Switching Time

Figure 9. Forward Bias Safe Operating Area Figure 10. Reverse Bias Safe Operating Area

Figure 11. Power Derating

110

0.01

0.1

1

10

I

B2

= - 4.8A, V

CC

= 200V

I

C

= 12A

t

STG

t

F

t

STG

& t

F

[

µ

s], SWITCHING TIME

I

B1

[A], FORWARD BASE CURRENT

1 10 100

0.1

1

10

I

B1

= 2.4A, I

B2

= - 4.8A

V

CC

= 200V

t

STG

t

F

t

F

& T

STG

[

µ

s], SWITCHING TIME

I

C

[A], COLLECTOR CURRENT

1 10 100 1000 10000

0.01

0.1

1

10

100

T

C

= 25

o

C

Single Pulse

t = 100ms t = 10ms

t = 1ms

I

C

(Pulse)

I

C

(DC)

IC [A], COLLECTOR CURRENT

V

CE

[V], COLLECTOR-EMITTER VOLTAGE

10 100 1000 10000

10

20

30

40

50

R

B2

= 0, I

B1

= 15A

V

CC

= 30V, L = 200

µ

H

V

BE

(off) = -3V

V

BE

(off) = -6V

1

I

C

[A], COLLECTOR CURRENT

V

CE

[V], COLLECTOR-EMITTER VOLTAGE

0 255075100125150175

0

50

100

150

200

250

300

P

C

[W], POWER DISSIPATION

T

C

[

O

C], CASE TEMPERATURE

FJL6825ATU

FJL6825ATU

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