©2001 Fairchild Semiconductor Corporation Rev. A, May 2001
FJL6825
1
NPN Triple Diffused Planar Silicon Transistor
Absolute Maximum Ratings
T
C
=25°C unless otherwise noted
* Pulse Test: PW=300µs, duty Cycle=2% Pulsed
Electrical Characteristics
T
C
=25°C unless otherwise noted
* Pulse Test: PW=20µs, duty Cycle=1% Pulsed
Thermal Characteristics
T
C
=25°C unless otherwise noted
Symbol Parameter Rating Units
V
CBO
Collector-Base Voltage 1500 V
V
CEO
Collector-Emitter Voltage 750 V
V
EBO
Emitter-Base Voltage 6 V
I
C
Collector Current (DC) 25 A
I
CP
* Collector Current (Pulse) 35 A
P
C
Collector Dissipation 200 W
T
J
Junction Temperature 150 °C
T
STG
Storage Temperature -55 ~ 150 °C
Symbol Parameter Test Conditions Min. Typ. Max. Units
I
CES
Collector Cut-off Current V
CB
=1400V, R
BE
=0 1 mA
I
CBO
Collector Cut-off Current V
CB
=800V, I
E
=0 10 µA
I
EBO
Emitter Cut-off Current V
EB
=4V, I
C
=0 1 mA
BV
CBO
Collector-Base Breakdown Voltage I
C
=500µA, I
E
=0 1500 V
BV
CEO
Collector-Emitter Breakdown Voltage I
C
=5mA, I
B
=0 750 V
BV
EBO
Emitter-Base Breakdown Voltage I
E
=500µA, I
C
=0 6 V
h
FE1
h
FF2
DC Current Gain V
CE
=5V, I
C
=1A
V
CE
=5V, I
C
=12A
10
69
V
CE
(sat) Collector-Emitter Saturation Voltage I
C
=12A, I
B
=3A 3 V
V
BE
(sat) Base-Emitter Saturation Voltage I
C
=12A, I
B
=3A 1.5 V
t
STG
* Storage Time V
CC
=200V, I
C
=12A, R
L
=17
Ω
I
B1
=2.4A, I
B2
= - 4.8A
3 µs
t
F
* Fall Time 0.15 0.2 µs
Symbol Parameter Typ Max Units
R
θjC
Thermal Resistance, Junction to Case 0.625 °C/W
FJL6825
High Voltage Color Display Horizontal
Deflection Output
• High Collector-Base Breakdown Voltage : BV
CBO
= 1500V
• Low Saturation Voltage : V
CE
(sat) = 3V (Max.)
• For Color Monitor
TO-264
1.Base 2.Collector 3.Emitter