ZTX1151ASTOB

PNP SILICON PLANAR MEDIUM POWER

HIGH GAIN TRANSISTOR

ISSUE 1 - JANUARY 1997

FEATURES

*V

CEO

= -40V

* 3 Amp Continuous Current

* 5 Amp Pulse Current

* Low Saturation voltage

* High Gain

ABSOLUTE MAXIMUM RATINGS.

PARAMETER SYMBOL VALUE UNIT

Collector-Base Voltage V

CBO

-45 V

Collector-Emitter Voltage V

CEO

-40 V

Emitter-Base Voltage V

EBO

-5 V

Peak Pulse Current I

CM

-5 A

Continuous Collector Current I

C

-3 A

Base Current I

B

-500 mA

Power Dissipation at T

amb

=25°C P

tot

1W

Operating and Storage Temperature

Range

T

j

:T

stg

-55 to +200 °C

ZTX1151A

C

B

E

E-Line

TO92 Compatible

ELECTRICAL CHARACTERISTICS (at T

amb

= 25°C unless otherwise stated).

PARAMETER SYMBOL

VALUE

UNIT CONDITIONS.

MIN. TYP. MAX.

Collector-Base

Breakdown Voltage

V

(BR)CBO

-45 -95 V

I

C

=-100µA

Collector-Emitter

Breakdown Voltage

V

(BR)CES

-40 -90 V

I

C

=-100µA

Collector-Emitter

Breakdown Voltage

V

(BR)CEO

-40 -85 V I

C

=-10mA

Collector-Emitter

Breakdown Voltage

V

(BR)CEV

-40 -90 V

I

C

=-100µA, V

EB

=+1V

Emitter-Base Breakdown

Voltage

V

(BR)EBO

-5 -8.5 V

I

E

=-100µA

Collector Cut-Off Current I

CBO

-0.3 -100 nA V

CB

=-36V

Emitter Cut-Off Current I

EBO

-0.3 -100 nA V

EB

=-4V

Collector Emitter Cut-Off

Current

I

CES

-0.3 -100 nA V

CE

=-32V

Collector-Emitter

Saturation Voltage

V

CE(sat)

-60

-115

-135

-160

-180

-90

-170

-210

-230

-240

mV

mV

mV

mV

mV

I

C

=-0.1A, I

B

=-1.0mA*

I

C

=-0.5A, I

B

=-5mA*

I

C

=-1A, I

B

=-20mA*

I

C

=-1.8A, I

B

=-70mA*

I

C

=-3A, I

B

=-250mA*

Base-Emitter

Saturation Voltage

V

BE(sat)

-950 -1050 mV I

C

=-3A, I

B

=-250mA*

Base-Emitter Turn-On

Voltage

V

BE(on)

-815 -950 mV I

C

=-3A, V

CE

=-2V*

Static Forward Current

Transfer Ratio

h

FE

270

250

180

100

450

400

300

190

40

800

I

C

=-10mA, V

CE

=-2V*

I

C

=-0.5A, V

CE

=-2V*

I

C

=-2A, V

CE

=-2V*

I

C

=-3A, V

CE

=-2V*

I

C

=-5A, V

CE

=-2V*

Transition Frequency f

T

145 MHz I

C

=-50mA, V

CE

=-10V

f=50MHz

Output Capacitance C

cb

40 pF V

CB

=-10V, f=1MHz

Switching Times t

on

170 ns I

C

=-2A, I

B

=-20mA,

V

CC

=-30V

ZTX1151A

ZTX1151A

1m 10

1m 100m 10

1m 100m 10

100m 100

10100m1m

1m 10

IC - Collector Current (A)

VCE(sat) v IC

0

1.0

V

CE(sat)

- (V)

IC/IB=10

IC/IB=50

IC/IB=100

+25°C

-55°C

h

FE

- Typical Gain

750

+100°C

0

I

C

- Collector Current (A)

hFE v IC

+25°C

+100°C

V

BE(on)

- (V)

1.2

0.6

-55°C

0

I

C

- Collector Current (A)

VBE(on) v IC

+100°C

VCE(sat) - (V)

1.0

+25°C

0

IC - Collector Current (A)

VCE(sat) v IC

+100°C

VBE(sat) - (V)

1.4

+25°C

0

I

C

- Collector Current (A)

VBE(sat) v IC

1s

100ms

IC - Collector Current (A)

10

DC

10m

V

CE

- Collector Emitter Voltage (V)

Safe Operating Area

10ms

1ms

100us

VCE=2V

+25° C

-55°C

IC/IB=100

VCE=2V

-55°C

IC/IB=100

10m 100m 1

0.2

0.4

0.6

0.8

10m 100m 1

0.2

0.4

0.6

0.8

10m

1

250

500

10m 1

0.2

0.4

0.6

0.8

1.0

1.2

10m 1

0.3

0.9

110

100m

1

IC/IB=200

TYPICAL CHARACTERISTICS

ZTX1151ASTOB

Mfr. #:

Buy ZTX1151ASTOB

Manufacturer:

Diodes Incorporated

Description:

Bipolar Transistors - BJT PNP High Current

Lifecycle:

New from this manufacturer.

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