VS-90SQ... Series, VS-90SQ...-M3 Series
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Vishay Semiconductors
Revision: 19-Sep-11
1
Document Number: 93417
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Schottky Rectifier, 9 A
FEATURES
• 150 °C T
J
operation
• Low forward voltage drop
• High frequency operation
• High purity, high temperature epoxy
encapsulation for enhanced mechanical
strength and moisture resistance
• Guard ring for enhanced ruggedness and
long term reliability
• Compliant to RoHS Directive 2002/95/EC
• Designed and qualified for commercial level
• Halogen-free according to IEC 61249-2-21 definition
(-M3 only)
DESCRIPTION
The VS-90SQ... axial leaded Schottky rectifier series has
been optimized for very low forward voltage drop, with
moderate leakage. The proprietary barrier technology allows
for reliable operation up to 150 °C junction temperature.
Typical applications are in switching power supplies,
converters, freewheeling diodes, and reverse battery
protection.
PRODUCT SUMMARY
Package DO-204AR
I
F(AV)
9 A
V
R
30 V, 35 V, 40 V, 45 V
V
F
at I
F
0.42 V
I
RM
max. 70 mA at 125 °C
T
J
max. 150 °C
Diode variation Single die
E
AS
12 mJ
Cathode Anode
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
I
F(AV)
Rectangular waveform 9A
V
RRM
Range 30 to 45 V
I
FSM
t
p
= 5 μs sine 2150 A
V
F
9 Apk, T
J
= 125 °C 0.42 V
T
J
Range - 55 to 150 °C
VOLTAGE RATINGS
PARAMETER SYMBOL
VS-90SQ030
VS-90SQ030-M3
VS-90SQ035
VS-90SQ035-M3
VS-90SQ040
VS-90SQ040-M3
VS-90SQ045
VS-90SQ045-M3
UNITS
Maximum DC reverse voltage V
R
30 35 40 45 V
Maximum working peak reverse voltage V
RWM
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current
See fig. 5
I
F(AV)
50 % duty cycle at T
C
= 69 °C, rectangular waveform 9
A
Maximum peak one cycle
non-repetitive surge current
See fig. 7
I
FSM
5 µs sine or 3 µs rect. pulse
Following any rated load
condition and with rated
V
RRM
applied
2150
10 ms sine or 6 ms rect. pulse 340
Non-repetitive avalanche energy E
AS
T
J
= 25 °C, I
AS
= 1.8 A, L = 7.4 mH 12 mJ
Repetitive avalanche current I
AR
Current decaying linearly to zero in 1 μs
Frequency limited by, T
J
maximum V
A
= 1.5 x V
R
typical
1.8 A
