MBR1080

Semiconductor Components Industries, LLC, 2012
January, 2012 Rev. 1
1 Publication Order Number:
MBR1080/D
MBR1080G,
MBR1090G,
MBR10100G,
NRVB10100G
SWITCHMODE
Power Rectifiers
Features
GuardRing for Stress Protection
Low Forward Voltage
175C Operating Junction Temperature
Epoxy Meets UL 94 V0 @ 0.125 in
Low Power Loss/High Efficiency
High Surge Capacity
Low Stored Charge Majority Carrier Conduction
AECQ101 Qualified and PPAP Capable
NRVB Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements
All Packages are PbFree*
Mechanical Characteristics
Case: Epoxy, Molded
Weight: 1.9 Grams (Approximately)
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
Lead Temperature for Soldering Purposes:
260C Max. for 10 Seconds
ESD Rating:
Human Body Model = 3B
Machine Model = C
*For additional information on our PbFree strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
SCHOTTKY BARRIER
RECTIFIERS
10 AMPERES, 80 to 100 VOLTS
3 1, 4
TO220AC
CASE 221B
MARKING DIAGRAM
AY WWG
B10x0
KA
Device Package Shipping
ORDERING INFORMATION
MBR10100G TO220
(PbFree)
50 Units/Rail
http://onsemi.com
MBR1090G TO220
(PbFree)
50 Units/Rail
A = Assembly Location
Y = Year
WW = Work Week
G = PbFree Package
B10x0 = Device Code
x = 8, 9 or 10
KA = Diode Polarity
MBR1080G TO220
(PbFree)
50 Units/Rail
NRVB10100G TO220
(PbFree)
50 Units/Rail
MBR1080G, MBR1090G, MBR10100G, NRVB10100G
http://onsemi.com
2
MAXIMUM RATINGS
Rating Symbol
MBR/NRVB
Unit
1080 1090 10100
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RWM
V
R
80 90 100 V
Average Rectified Forward Current (Rated V
R
) T
C
= 133C I
F(AV)
10 A
Peak Repetitive Forward Current
(Rated V
R
, Square Wave, 20 kHz) T
C
= 133C
I
FRM
20
A
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions halfwave, single phase, 60 Hz)
I
FSM
150
A
Peak Repetitive Reverse Surge Current (2.0 ms, 1.0 kHz)
I
RRM
0.5 A
Operating Junction Temperature (Note 1) T
J
*65 to +175 C
Storage Temperature T
stg
*65 to +175 C
Voltage Rate of Change (Rated V
R
) dv/dt 10,000
V/ms
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. The heat generated must be less than the thermal conductivity from JunctiontoAmbient: dP
D
/dT
J
< 1/R
q
JA
.
THERMAL CHARACTERISTICS
Characteristic Symbol Value Unit
Maximum Thermal Resistance, JunctiontoCase
R
q
JC
2.0 C/W
Maximum Thermal Resistance, JunctiontoAmbient
R
q
JA
60 C/W
ELECTRICAL CHARACTERISTICS
Characteristic Symbol Value Unit
Maximum Instantaneous Forward Voltage (Note 2)
(i
F
= 10 Amps, T
C
= 125C)
(i
F
= 10 Amps, T
C
= 25C)
(i
F
= 20 Amps, T
C
= 125C)
(i
F
= 20 Amps, T
C
= 25C)
v
F
0.7
0.8
0.85
0.95
V
Maximum Instantaneous Reverse Current (Note 2)
(Rated dc Voltage, T
C
= 125C)
(Rated dc Voltage, T
C
= 25C)
i
R
6.0
0.10
mA
2. Pulse Test: Pulse Width = 300 ms, Duty Cycle 2.0%.
MBR1080G, MBR1090G, MBR10100G, NRVB10100G
http://onsemi.com
3
Figure 1. Typical Forward Voltage Figure 2. Typical Reverse Current
Figure 3. Typical Current Derating, Case Figure 4. Typical Current Derating, Ambient
Figure 5. Forward Power Dissipation
0.60
v
F
, INSTANTANEOUS VOLTAGE (VOLTS)
20
50
10
2.0 4.00
I
F(AV)
, AVERAGE CURRENT (AMPS)
10
4.0
3.0
2.0
1.0
0
3.0
i
F
, INSTANTANEOUS FORWARD CURRENT (AMPS)
5.0
3.0
0.2 0.4 0.8
P
5.0 106.0
7.0
1.0
0.5
1.0
1.0 7.0 8.0 9.0
5.0
6.0
T
J
= 25C
150C
, AVERAGE POWER DISSIPATION (WATTS)
F(AV)
SQUARE WAVE
dc
T
A
= 25C
125C
100C
0.50.1 0.3 0.7 0.9
9.0
8.0
I
PK
/I
AV
= p
I
PK
/I
AV
= 5.0
I
PK
/I
AV
= 10
I
PK
/I
AV
= 20
V
R
, REVERSE VOLTAGE (VOLTS)
0
I
20 40 60 80
0.1
1.0
, REVERSE CURRENT (mA)
R
10
T
J
= 150C
125C
100C
0.01
25C
100
0.0001
0.001
80
T
C
, CASE TEMPERATURE (C)
15
0
I
100 120 140 160
, AVERAGE FORWARD CURRENT (AMPS)
F(AV)
SQUARE WAVE
dc
10
20
RATED VOLTAGE APPLIED
R
q
JC
= 2C/W
180
5.0
T
A
, AMBIENT TEMPERATURE (C)
200
20
0
40
I
F(AV)
, AVERAGE FORWARD CURRENT (AMPS)
60 80 160
dc
15
10
100 120 140
RATED VOLTAGE
APPLIED
SQUARE WAVE
dc
(HEATSINK)
R
q
JA
= 16C/W
(NO HEATSINK)
R
q
JA
= 60C/W
5.0
180

MBR1080

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
Schottky Diodes & Rectifiers 10A 80V
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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