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IXTA160N075T7
Fig. 14. Resistive Turn-on
Rise Time vs. Drain Current
10
20
30
40
50
60
70
80
25 30 35 40 45 50
I
D
- Amperes
t
r
- Nanoseconds
R
G
= 5
Ω
V
GS
= 10V
V
DS
= 38V
T
J
= 125ºC
T
J
= 25ºC
Fig. 15. Resistive Turn-on
Switching Times vs. Gate Resistance
10
20
30
40
50
60
70
80
90
100
4 6 8 101214161820
R
G
- Ohms
t
r
- Nanoseconds
24
26
28
30
32
34
36
38
40
42
t
d ( o n )
- Nanoseconds
t
r
t
d(on)
- - - -
T
J
= 125ºC, V
GS
= 10V
V
DS
= 38V
I
D
= 50A
I
D
= 25A
Fig. 16. Resistive Turn-off
Switching Times vs. Junction Temperature
42
44
46
48
50
52
54
56
58
60
62
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
t
f
- Nanoseconds
55
58
61
64
67
70
73
76
79
82
85
t
d ( o f f )
- Nanoseconds
t
f
t
d(off)
- - - -
R
G
= 5
Ω
, V
GS
= 10V
V
DS
= 38V
I
D
= 25A
I
D
= 50A
Fig. 13. Resistive Turn-on
Rise Time vs. Junction Temperature
15
20
25
30
35
40
45
50
55
60
65
70
75
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
t
r
- Nanoseconds
R
G
= 5
Ω
V
GS
= 10V
V
DS
= 38V
I
D
= 50A
I
D
= 25A
Fig. 18. Resistive Turn-off
Switching Times vs. Gate Resistance
40
50
60
70
80
90
100
110
120
130
4 6 8 101214161820
R
G
- Ohms
t
f
- Nanoseconds
50
70
90
110
130
150
170
190
210
230
t
d ( o f f )
- Nanoseconds
t
f
t
d(off)
- - - -
T
J
= 125ºC, V
GS
= 10V
V
DS
= 38V
I
D
= 50A
I
D
= 25A
Fig. 17. Resistive Turn-off
Switching Times vs. Drain Current
42
44
46
48
50
52
54
56
58
60
62
25 30 35 40 45 50
I D - Amperes
t
f
- Nanoseconds
50
54
58
62
66
70
74
78
82
86
90
t
d ( o f f )
- Nanoseconds
t
f
t
d(off)
- - - -
R
G
= 5
Ω
, V
GS
= 10V
V
DS
= 38V
T
J
= 125ºC
T
J
= 25ºC
T
J
= 25ºC
T
J
= 125ºC
IXYS REF: T_160N075T (4V) 6-16-06.xls
