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MIC94030YM4-TR

P1-P3P4-P6
MIC94030/94031
TinyFET
®
P-Channel MOSFET
TinyFET is a registered trademark of Micrel, Inc.
Micrel Inc. • 2180 Fortune Drive • San Jose, CA 95131 • USA • tel +1 (
408
) 944-0800 • fax + 1 (408) 474-1000 • http://www.micrel.com
July 2006
M9999-071106
General Description
The MIC94030 and MIC94031 are 4-terminal silicon gate
P-channel MOSFETs that provide low on-resistance in a
very small package.
Designed for high-side switch applications where space is
critical, the MIC94030/1 exhibits an on-resistance of
typically 0.75 at 4.5V gate-to-source voltage. The
MIC94030/1 also operates with only 2.7V gate-to-source
voltage.
The MIC94030 is the basic 4-lead P-channel MOSFET.
The MIC94031 is a variation that includes an internal gate
pull-up resistor that can reduce the system parts count in
many applications.
The 4-terminal SOT-143 package permits a substrate
connection separate from the source connection. This 4-
terminal configuration improves the
JA
(improved heat
dissipation) and makes analog switch applications
practical.
The small size, low threshold, and low R
DS(on)
make the
MIC94030/1 the ideal choice for PCMCIA card sleep mode
or distributed power management applications.
Features
• 13.5V minimum drain-to-source breakdown
• 0.75 typical on-resistance
– at 4.5V gate-to-source voltage
• 0.45 typical on-resistance
– at 10V gate-to-source voltage
• Operates with 2.7V gate-to-source voltage
• Separate substrate connection for added control
• Industry’s smallest surface mount package
Applications
• Distributed power management
• PCMCIA card power management
• Battery-powered computers, peripherals
• Hand-held bar-code scanners
• Portable communications equipment
Ordering Information
Part Number
Standard Marking Pb-Free Marking
Junction Temp. Range Package
MIC94030BM4 P30 MIC94030YM4 P30 –55° to +150°C SOT-143
MIC94031BM4 P31 MIC94031YM4 P31 –55° to +150°C SOT-143
Pin Configuration
Substrat
e
SourceGate
Drain
P3x
Part
Identification
P3x
SOT-143 (M4)
Typical PCB Layout
S
D
G
SS
PCB heat sin
k
p
lane improve
s
heat dissipatio
n
PCB traces
Micrel, Inc. MIC94030/MIC94031
July 2006
2
M9999-071106
Functional Diagrams Schematic Symbol
Ga t e
Source
Drain
Substrat
e
G
S
D
SS
G
S
D
SS
~500k
Internal
gate-to-source
pull-up resistor
Schematic Symbol MIC94030 MIC94031
Micrel, Inc. MIC94030/MIC94031
July 2006
3
M9999-071106
Absolute Maximum Ratings
(1)
Voltage and current values are negative. Signs not shown for clarity.
Drain-to-Source Voltage (pulse).....................................16V
Gate-to-Source Voltage (pulse). ....................................16V
Continuous Drain Current
T
A
= 25°C ...................................................................1A
T
A
= 100°C..............................................................0.5A
Operating Junction Temperature ..............–55°C to +150°C
Storage Temperature ................................–55°C to +150°C
Total Power Dissipation
T
A
= 25°C...........................................................568mW
T
A
= 100°C.........................................................227mW
Thermal Resistance
θ
JA
....................................................................220°C/W
θ
JC
....................................................................130°C/W
Lead Temperature
1/16” from case, 10s.......................................... +300°C
Electrical Characteristics
Voltage and current values are negative. Signs not shown for clarity.
Symbol Parameter Condition (Note 1) Min Typ Max Units
V
BDSS
Drain-Source Breakdown Voltage V
GS
= 0V, I
D
= 250µA 13.5 V
V
GS
Gate Threshold Voltage V
DS
= V
GS
, I
D
= 250µA 0.6 1.0 1.4 V
I
GSS
Gate-Body Leakage
V
DS
= 0V, V
GS
= 12V, Note 2, Note 3
1 µA
R
GS
Gate-Source Resistor
V
DS
= 0V, V
GS
= 12V, Note 2, Note 4
500 750 1000 k
C
ISS
Input Capacitance V
GS
= 0V, V
DS
= 12V 100 pF
I
DSS
Zero Gate Voltage Drain Current V
DS
= 12V, V
GS
= 0V 25 µA
V
DS
= 12V, V
GS
= 0V, T
J
= 125°C 0.010 250 µA
I
D(ON)
On-State Drain Current
V
DS
= 10V, V
GS
= 10V, Note 5
6.3 A
R
DS(ON)
Drain-Source On-State Resist
V
GS
= 10V, I
D
= 100mA
V
GS
= 4.5V, I
D
= 100mA
V
GS
= 2.7V, I
D
= 100mA
0.45
0.75
1.20
1.00
g
FS
Forward Transconductance
V
DS
= 10V, I
D
= 200mA, Note 5
480 mS
Notes:
1. T
A
= 25°C unless noted. Substrate connected to source for all conditions.
2. ESD gate protection diode conducts during positive gate-to-source voltage excursions.
3. MIC94030 only.
4. MIC94031 only.
5. Pulse Test: Pulse Width 80µsec, Duty Cycle 0.5%.
P1-P3P4-P6

MIC94030YM4-TR

Mfr. #:
Buy MIC94030YM4-TR
Manufacturer:
Microchip Technology / Micrel
Description:
MOSFET Dual P-Channel MOSFET
Lifecycle:
New from this manufacturer.
Delivery:
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