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DMP2069UFY4-7

P1-P3P4-P6
DMP2069UFY4
Document number: DS31949 Rev. 5 - 2
1 of 6
www.diodes.com
January 2012
© Diodes Incorporated
DMP2069UFY4
NEW PRODUCT
P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V
(BR)DSS
R
DS(ON)
max
I
D
max
T
A
= 25°C
-20V
54mΩ @ V
GS
= -4.5V
-2.5A
90mΩ @ V
GS
= -1.8V
-1.8A
Features and Benefits
• Low On-Resistance
• Low Input Capacitance
• Fast Switching Speed
• Low Input/Output Leakage
• ESD Protected Up To 3kV
• Lead Free By Design/RoHS Compliant (Note 1)
• "Green" Device, Halogen and Antimony Free (Note 2)
• Qualified to AEC-Q101 Standards for High Reliability
Description and Applications
This MOSFET has been designed to minimize the on-state resistance
(R
DS(on)
) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
• Backlighting
• Power Management Functions
• DC-DC Converters
•
Mechanical Data
• Case: X2-DFN2015-3
• Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals: Finish ⎯ NiPdAu over Copper leadframe. Solderable
per MIL-STD-202, Method 208
• Terminals Connections: See Diagram Below
• Weight: 0.008 grams (approximate)
Ordering Information (Note 3)
Part Number Case Packaging
DMP2069UFY4-7 X2-DFN2015-3 3000/Tape & Reel
Notes: 1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com.
3. For packaging details, go to our website at http://www.diodes.com.
Marking Information
Date Code Key
Year 2009 2010 2011 2012 2013 2014 2015
Code W X Y Z A B C
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
ESD PROTECTED TO 3kV
Top View Internal Schematic Bottom View
D
S
G
29P = Marking Code
YM = Date Code Marking
Y = Year (ex: W = 2009)
M = Month (ex: 9 = September)
29P
YM
X2-DFN2015-3
DMP2069UFY4
Document number: DS31949 Rev. 5 - 2
2 of 6
www.diodes.com
January 2012
© Diodes Incorporated
DMP2069UFY4
NEW PRODUCT
Maximum Ratings @T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Units
Drain-Source Voltage
V
DSS
-20 V
Gate-Source Voltage
V
GSS
±8 V
Continuous Drain Current (Note 4)
Steady
State
T
A
= 25°C
T
A
= 70°C
I
D
-2.5
-2.2
A
Pulsed Drain Current (Note 5)
I
DM
-12 A
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation (Note 4)
P
D
0.53 W
Thermal Resistance, Junction to Ambient @T
A
= 25°C R
θJA
231 °C/W
Operating and Storage Temperature Range
T
J,
T
STG
-55 to +150 °C
Electrical Characteristics @T
A
= 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
BV
DSS
-20
⎯ ⎯
V
V
GS
= 0V, I
D
= -250μA
Zero Gate Voltage Drain Current T
J
= 25°C I
DSS
⎯ ⎯
-1.0
μA
V
DS
= -20V, V
GS
= 0V
Gate-Source Leakage
I
GSS
⎯ ⎯
±10
μA
V
GS
= ±8V, V
DS
= 0V
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
V
GS
(
th
)
-0.3 -0.55 -1.0 V
V
DS
= V
GS
, I
D
= -250μA
Static Drain-Source On-Resistance
R
DS (ON)
⎯
36 54
mΩ
V
GS
= -4.5V, I
D
= -2.5A
46 69
V
GS
= -2.5V, I
D
= -2.2A
60 90
V
GS
= -1.8V, I
D
= -2.0A
Forward Transfer Admittance
|Y
fs
| ⎯
8
⎯
S
V
DS
= -5V, I
D
= -2.5A
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
C
iss
⎯
214
⎯
pF
V
DS
= -10V, V
GS
= 0V
f = 1.0MHz
Output Capacitance
C
oss
⎯
104
⎯
pF
Reverse Transfer Capacitance
C
rss
⎯
25
⎯
pF
Gate Resistnace
R
g
⎯
250
⎯
Ω
V
DS
= 0V, V
GS
= 0V, f = 1.0MHz
SWITCHING CHARACTERISTICS (Note 7)
Total Gate Charge
Q
g
⎯
9.1
⎯
nC
V
GS
= -4.5V, V
DS
= -10V, I
D
= -4A
Gate-Source Charge
Q
g
s
⎯
1.5
⎯
nC
Gate-Drain Charge
Q
g
d
⎯
1.7
⎯
nC
Turn-On Delay Time
t
D
(
on
)
⎯
80.4 160 ns
V
DS
= -10V, V
GS
= -4.5V,
R
D
= 2.5Ω, R
G
= 3.0Ω
Turn-On Rise Time
t
r
⎯
155.1 210 ns
Turn-Off Delay Time
t
D
(
off
)
⎯
688.1 1376 ns
Turn-Off Fall Time
t
f
⎯
423.8 848 ns
Notes: 4. Device mounted on FR-4 PCB with minimum recommended pad layout.
5. Repetitive rating, pulse width limited by junction temperature.
6. Short duration pulse test used to minimize self-heating effect.
7. Guaranteed by design. Not subject to production testing.
DMP2069UFY4
Document number: DS31949 Rev. 5 - 2
3 of 6
www.diodes.com
January 2012
© Diodes Incorporated
DMP2069UFY4
NEW PRODUCT
0
5
10
15
20
01 2 3 45
Fig. 1 Typical Output Characteristic
V , DRAIN-SOURCE VOLTAGE (V)
DS
I, D
R
AIN
C
U
R
R
EN
T
(A)
D
V = 2.0V
GS
V = 3.0V
GS
V = 3.5V
GS
V = 4.5V
GS
V = 2.5V
GS
V = 1.5V
GS
V = 1.2V
GS
V = 1.8V
GS
0
5
10
15
20
0 0.5 1 1.5 2 2.5 3 3.5 4
Fig. 2 Typical Transfer Characteristic
V , GATE-SOURCE VOLTAGE (V)
GS
I, D
R
AIN
C
U
R
R
EN
T
(A)
D
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
V = 5V
DS
0
0.02
0.04
0.06
0.08
0.10
0.12
0.14
0.16
0 5 10 15 20
Fig. 3 Typical On-Resistance
vs. Drain Current and Gate Voltage
I , DRAIN-SOURCE CURRENT (A)
D
R , DRAIN-SOURCE ON-RESISTANCE ( )
DS(ON)
Ω
V = 4.5V
GS
V = 2.5V
GS
V = 1.8V
GS
V = 1.5V
GS
0
0.02
0.04
0.06
0.08
0 5 10 15 20
I , DRAIN CURRENT (A)
D
Fig. 4 Typical On-Resistance
vs. Drain Current and Temperature
R
, D
R
AI
N
-S
O
U
R
C
E
O
N
-
R
ESIS
T
A
N
C
E ( )
DS(ON)
Ω
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
V = 4.5V
GS
0.5
0.7
0.9
1.1
1.3
1.5
1.7
Fig. 5 On-Resistance Variation with Temperature
-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)
A
R , DRAIN-SOURCE
ON-RESISTANCE (NORMALIZED)
DSON
V = 4.5V
I = 10A
GS
D
V = 2.5V
I = 5A
GS
D
0
0.02
0.04
0.06
0.08
0.10
Fig. 6 On-Resistance Variation with Temperature
-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)
A
R , DRAIN-SOURCE ON-RESISTANCE ( )
DSON
Ω
V = 4.5V
I = 10A
GS
D
V = 2.5V
I = 5A
GS
D
P1-P3P4-P6

DMP2069UFY4-7

Mfr. #:
Buy DMP2069UFY4-7
Manufacturer:
Diodes Incorporated
Description:
MOSFET MOSFET P-CHAN.
Lifecycle:
New from this manufacturer.
Delivery:
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