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NRVBA160T3G

P1-P3P4-P4
© Semiconductor Components Industries, LLC, 2013
May, 2017 − Rev. 13
1 Publication Order Number:
MBRA160T3/D
MBRA160, NRVBA160
Surface Mount
Schottky Power Rectifier
SMA Power Surface Mount Package
This device employs the Schottky Barrier principle in a large area
metal−to−silicon power diode. State of the art geometry features
epitaxial construction with oxide passivation and metal overlay
contact. Ideally suited for low voltage, high frequency rectification, or
as free wheeling and polarity diodes in surface mount applications
where compact size and weight are critical to the system.
Features
• Small Compact Surface Mountable Package with J−Bent Leads
• Rectangular Package for Automated Handling
• Highly Stable Oxide Passivated Junction
• Very Low Forward Voltage Drop
• Guard−ring for Stress Protection
• NRVBA Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable*
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Mechanical Characteristics:
• Case: Epoxy, Molded
• Weight: 70 mg (Approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
• Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
• Shipped in 12 mm tape, 5000 units per 13 inch reel
• Polarity: Cathode Lead Indicated by Polarity Band
• ESD Ratings:
♦ Machine Model = C
♦ Human Body Model = 3B
Device Package Shipping
†
ORDERING INFORMATION
SCHOTTKY BARRIER
RECTIFIER
1.0 AMPERES
60 VOLTS
MARKING DIAGRAM
SMA
CASE 403D
www.onsemi.com
MBRA160T3G SMA
(Pb−Free)
5,000 /
Tape & Reel
B16
AYWW
G
B16 = Specific Device Code
A = Assembly Location**
Y = Year
WW = Work Week
G = Pb−Free Package
NRVBA160T3G* SMA
(Pb−Free)
5,000 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
**The Assembly Location code (A) is front sid
e
optional. In cases where the Assembly Location
is
stamped in the package bottom (molding ejecter pin
),
the front side assembly code may be blank.
(Note: Microdot may be in either location)
NRVBA160T3G−VF01 SMA
(Pb−Free)
5,000 /
Tape & Reel
MBRA160, NRVBA160
www.onsemi.com
2
MAXIMUM RATINGS
Rating Symbol Value Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RWM
V
R
60 V
Average Rectified Forward Current
(At Rated V
R
, T
C
= 105°C)
I
O
1.0
A
Average Rectified Forward Current
(At Rated V
R
, T
C
= 70°C)
I
O
2.1
A
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
I
FSM
60
A
Storage/Operating Case Temperature T
stg
, T
C
−55 to +150 °C
Operating Junction Temperature (Note 1) T
J
−55 to +150 °C
Voltage Rate of Change
(Rated V
R
, T
J
= 25°C)
dv/dt
10,000
V/ms
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dP
D
/dT
J
< 1/R
q
JA
.
THERMAL CHARACTERISTICS
Characteristic
Symbol Value Unit
Thermal Resistance, Junction−to−Lead (Note 2)
Thermal Resistance, Junction−to−Ambient (Note 2)
R
q
JL
R
q
JA
35
86
°C/W
2. Mounted on 2″ Square PC Board with 1″ Square Total Pad Size, PC Board FR4.
ELECTRICAL CHARACTERISTICS
Characteristic
Symbol Value Unit
Maximum Instantaneous Forward Voltage (Note 3)
(I
F
= 1.0 A)
V
F
T
J
= 25°C T
J
= 125°C
V
0.510 0.475
Maximum Instantaneous Reverse Current
(V
R
= 60 V)
I
R
T
J
= 25°C T
J
= 125°C
mA
0.2 20
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulse Test: Pulse Width ≤ 250 ms, Duty Cycle ≤ 2.0%.
MBRA160, NRVBA160
www.onsemi.com
3
Figure 1. Typical Forward Voltage
0.1 0.3 0.4 0.70.2 0.5
10
0.1
1
I
F
, INSTANTANEOUS FORWARD
CURRENT (AMPS)
V
F
, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
Figure 2. Maximum Forward Voltage
0.1 0.
8
0.4 0.60.3 0.5
10
0.1
1
V
F
, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
I
F
, INSTANTANEOUS FORWARD
CURRENT (AMPS)
Figure 3. Typical Reverse Current
10 3002040
1E−05
1E−04
I
R
, INSTANTANEOUS REVERSE CURRENT (A)
V
R
, REVERSE VOLTAGE (VOLTS)
Figure 4. Typical Capacitance
75°C
25°C
1E−03
1E−02
125°C
75°C
25°C
10 30 7
0
02040
20
30
C, CAPACITANCE (pF)
V
R
, REVERSE VOLTAGE (VOLTS)
40
50
1E−06
0.6 0.8
125°C
6050 50 60
60
70
80
Figure 5. Current Derating − Junction−to−Lead
115 125110 120 130
0.8
T
L
, LEAD TEMPERATURE (°C)
Figure 6. Forward Power Dissipation
1.2
1.6
2.0
SQUARE WAVE
dc
0.2 0.60 0.4 0.8
0
P
FO
, AVERAGE POWER DISSIPATION (W)
I
O
, AVERAGE FORWARD CURRENT (AMPS)
0.2
0.4
140135 155
1 1.2
0.8
1.0
I
F
, AVERAGE FORWARD CURRENT (A)
75°C
25°C
125°C
0.2 0.7
25°C
1.4
1.0
0.6
150
0.4
0.2
0
1.4 1.6
0.6
SQUARE WAVE
dc
145
1.8
T
J
= 150°C
T
J
= 150°C
P1-P3P4-P4

NRVBA160T3G

Mfr. #:
Buy NRVBA160T3G
Manufacturer:
ON Semiconductor
Description:
Schottky Diodes & Rectifiers SBN REC SMA 1A 60V SHTKY
Lifecycle:
New from this manufacturer.
Delivery:
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