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TPC8.2HM3/86A

P1-P3P4-P5
VCUT07B1-HD1
www.vishay.com
Vishay Semiconductors
Rev. 1.4, 08-Jun-16
1
Document Number: 84137
For technical questions, contact: ESDprotection@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Bidirectional Symmetrical (BiSy) Single Line ESD-Protection Diode
in LLP1006-2L
MARKING (example only)
Bar = pin 1marking
X = date code
Y = type code (see table below)
FEATURES
• Ultra compact LLP1006-2L package
• Low package profile < 0.4 mm
• 1-line ESD-protection
• Working range ± 7 V
• Low leakage current I
R
< 0.1 μA
• Low load capacitance C
D
= 14 pF
• ESD-protection acc. IEC 61000-4-2
± 30 kV contact discharge
± 30 kV air discharge
• Soldering can be checked by standard vision inspection;
no X-ray necessary
• Pin plating NiPdAu (e4) no whisker growth
• e4 - precious metal (e.g. Ag, Au, NiPd, NiPdAu) (no Sn)
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
PATENT(S): www.vishay.com/patents
This Vishay product is protected by one or more United States and International patents.
20855
21129
1
2
21121
XY
ORDERING INFORMATION
DEVICE NAME ORDERING CODE
TAPED UNITS PER REEL
(8 mm TAPE ON 7" REEL)
MINIMUM ORDER QUANTITY
VCUT07B1-HD1 VCUT07B1-HD1-G4-08 8000 8000
PACKAGE DATA
DEVICE NAME
PACKAGE
NAME
TYPE
CODE
WEIGHT
MOLDING COMPOUND
FLAMMABILITY RATING
MOISTURE
SENSITIVITY LEVEL
SOLDERING
CONDITIONS
VCUT07B1-HD1 LLP1006-2L U 0.72 mg UL 94 V-0
MSL level 1
(according J-STD-020)
260 °C/10 s at terminals
ABSOLUTE MAXIMUM RATINGS VCUT07B1-HD1
PARAMETER TEST CONDITIONS SYMBOL VALUE UNIT
Peak pulse current Acc. IEC 61000-4-5; t
p
= 8/20 μs; single shot I
PPM
4A
Peak pulse power
Pin 1 to pin 2
acc. IEC 61000-4-5; t
p
= 8/20 μs; single shot
P
PP
60 W
ESD immunity
Contact discharge acc. IEC 61000-4-2; 10 pulses
V
ESD
± 30 kV
Air discharge acc. IEC 61000-4-2; 10 pulses ± 30 kV
Operating temperature Junction temperature T
J
-40 to +125 °C
Storage temperature T
stg
-55 to +150 °C
VCUT07B1-HD1
www.vishay.com
Vishay Semiconductors
Rev. 1.4, 08-Jun-16
2
Document Number: 84137
For technical questions, contact: ESDprotection@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
CUT THE SPIKES WITH VCUT07B1-HD1:
The VCUT07B1-HD1 is a bidirectional and symmetrical (BiSy) ESD-protection device which clamps positive and negative
overvoltage transients to ground. Connected between the signal or data line and the ground the VCUT07B1-HD1 offers a high
isolation (low leakage current, low capacitance) within the specified working range. Due to the short leads and small package
size of the tiny LLP1006-2L package the line inductance is very low, so that fast transients like an ESD-strike can be clamped
with minimal over- or undershoots.
TYPICAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
Fig. 1 - ESD Discharge Current Wave Form
acc. IEC 61000-4-2 (330 /150 pF)
Fig. 2 - 8/20 μs Peak Pulse Current Wave Form
acc. IEC 61000-4-5
ELECTRICAL CHARACTERISTICS VCUT07B1-HD1 (pin 1 to pin 2 or pin 2 to pin1)
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITIONS/REMARKS SYMBOL MIN. TYP. MAX. UNIT
Protection paths Number of lines which can be protected N
channel
--1lines
Reverse stand-off voltage Max. reverse working voltage V
RWM
--7V
Reverse voltage at I
R
= 0.1 μA V
R
7--V
Reverse current at V
RWM
= 7 V I
R
--0.1μA
Reverse breakdown voltage at I
R
= 1 mA V
BR
7.3 - - V
Reverse clamping voltage
at I
PP
= 1 A
V
C
-912V
at I
PP
= I
PPM
= 4 A - - 15 V
Capacitance
at V
R
= 0 V; f = 1 MHz
C
D
-1416pF
at V
R
= 2.5 V; f = 1 MHz - 11 - pF
0 %
20 %
40 %
60 %
80 %
100 %
120 %
-10 0 102030405060708090100
Time (ns)
Discharge Current I
ESD
Rise time = 0.7 ns to 1 ns
53 %
27 %
20557
0 %
20 %
40 %
60 %
80 %
100 %
010203040
Time (µs)
I
PPM
20 µs to 50 %
8 µs to 100 %
20548
VCUT07B1-HD1
www.vishay.com
Vishay Semiconductors
Rev. 1.4, 08-Jun-16
3
Document Number: 84137
For technical questions, contact: ESDprotection@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 3 - Typical Capacitance C
D
vs. Reverse Voltage V
R
Fig. 4 - Typical Reverse Voltage V
R
vs. Reverse Current I
R
Fig. 5 - Typical Peak Clamping Voltage V
C
vs.
Peak Pulse Current I
PP
Fig. 6 - Typical Clamping Performance at + 8 kV
Contact Discharge (acc. IEC 61000-4-2)
Fig. 7 - Typical Clamping Performance at + 8 kV
Contact Discharge (acc. IEC 61000-4-2)
Fig. 8 - Typical Peak. Clamping Voltage at ESD Contact Discharge
(acc. IEC 61000-4-2)
12
14
16
8
10
12
4
6
0
2
- 8 - 6 - 4 - 2 0 2 4 6 8
f = 1 MHz
Pin 2 - 1
V
R
(V)
C
D
(pF)
22630
I
R
(µA)
V
R
(V)
6
8
10
0
2
4
- 6
- 4
- 2
- 10
- 8
0.01 0.1 1 10 100 1000 10 000
Pin 2 - 1
22631
V
C
(V)
I
PP
(A)
22632
15
10
0
5
- 5
- 15
- 10
0 1 2 3 4 5
negative surge
positive surge
Measured acc. IEC 6100-4-5
(8/20 μs - wave form)
Pin 2-1
V
C
t (ns)
22633
50
60
70
2
30
40
0
10
20
- 20
- 10
- 10 0 10 20 30 40 50 60 70 80 90
Pin 2-1
acc. IEC 61000-4-2
+ 8 kV
contact discharge
V
C-ESD
(V)
0
10
20
- 20
- 30
- 10
- 50
- 40
- 70
- 60
-10 0 10 20 30 40 50 60 70 80 90
Pin 2-1
acc. IEC 61000-4-2
- 8 kV
contact discharge
22634
t (ns)
V
C-ESD
(V)
V
C-ESD
(V)
V
ESD
(kV)
40
60
0
20
- 20
- 40
- 60
0 5 10 15 20 25
negative discharge
positive discharge
acc. IEC 61000-4-2 contact discharge
Pin 2-1
22635
30 ns
V
C-ESD
P1-P3P4-P5

TPC8.2HM3/86A

Mfr. #:
Buy TPC8.2HM3/86A
Manufacturer:
Vishay
Description:
TVS Diodes - Transient Voltage Suppressors 1.5KW 8.2V 10% Uni
Lifecycle:
New from this manufacturer.
Delivery:
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