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QW-BSCXX
REV:
Comchip Technology CO., LTD.
Features
- Rated to 650V at 8 Amps
- Short recovery time
- High speed switching possible
- Temperature independent switching behaviour.
Company reserves the right to improve product design , functions and reliability without notice.
- High temperature operation.
- High frequency operation.
Parameter
Unit
Maximum Ratings (at TA=25°C, unless otherwise noted)
Repetitive peak reverse voltage
DC bolcking voltage
Continuous forward current
Non-repetitive peak forward surge current
Power dissipation
Typical thermal resistance
Operating junction temperature range
Symbol
VRRM
VDC
IF
IFSM
PTOT
RθJC
TJ
650
100
102.4
45
1.465
-55 ~ +175
V
V
A
A
W
°C/W
°C
Storage temperature range
TSTG
-55 ~ +175
°C
Value
650
TC = 25°C
T = 135°CC
T = 150°CC
25.5
11
8
Repetitive peak forward surge cruuent
IFRM
50
A
Conditions
Tc = 25°C, tp = 10ms
Half sine wave, D = 0.3
Tc = 25°C, tp = 10ms
Half sine wave
TC = 25°C
TC = 110°C
Junction to case
Circuit Diagram
Reverse Voltage: 650 V
Forward Current: 8 A
RoHS Device
CDBDSC8650-G
Silicon Carbide Power Schottky Diode
Surge peak reverse voltage
VRSM
650
V
- Positive temperature coefficient on VF
Dimensions in inches and (millimeters)
D-PAK(TO-252)
0.012(0.30)
Max.
0.091(2.32)
0.089(2.28)
0.023(0.58)
0.018(0.46)
0.114(2.90)
0.100(2.55)
0.090(2.29)
0.035(0.89)
0.023(0.58)
0.016(0.43)
0.034(0.86)
0.026(0.66)
0.085(2.16)
0.093(2.37)
0.264(6.70)
0.256(6.50)
0.215(5.46)
0.201(5.10)
Φ
0.051(1.30)
0.043(1.10)
1 2
3
0.409(10.40)
0.394(10.00)
0.244(6.20)
0.236(6.00)
C(3)
A(2)
C(1)
