NTMFS4931NT1G

NTMFS4931N
http://onsemi.com
4
TYPICAL CHARACTERISTICS
0
20
40
60
80
100
120
140
160
180
200
220
01234
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
Figure 1. On−Region Characteristics
V
GS
= 2.2 V
V
GS
= 2.4 V
V
GS
= 2.6 V
V
GS
= 2.8 V
V
GS
= 3 V
V
GS
= 3.2 V
V
GS
= 3.4 V
V
GS
= 3.8 V to 10 V
0
20
40
60
80
100
120
140
160
180
200
220
11.522.533.54
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
Figure 2. Transfer Characteristics
T
J
= 25°C
T
J
= −55°C
T
J
= 125°C
V
DS
= 10 V
12
3.0 4.0 5.0 6.0 7.0 8.0 9.0 10
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
I
D
= 30 A
T
J
= 25°C
0.0005
0.0006
0.0007
0.0008
0.0009
0.001
0.0011
0.0012
0.0013
0.0014
0.0015
0.0016
0.0017
0.0018
30 40 50 60 70 80 90 100 110 120130 140 150 160
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
I
D
, DRAIN CURRENT (A)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
V
GS
= 4.5 V
V
GS
= 10 V
T
J
= 25°C
0.6
0.7
0.8
0.9
1
1.1
1.2
1.3
1.4
1.5
1.6
−50 −25 0 25 50 75 100 125 150
Figure 5. On−Resistance Variation with
Temperature
T
J
, JUNCTION TEMPERATURE (°C)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE
(NORMALIZED)
I
D
= 30 A
V
GS
= 10 V
10
100
1000
10000
100000
5 1015202530
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
I
DSS
, LEAKAGE (nA)
V
GS
= 0 V
T
J
= 150°C
T
J
= 125°C
T
J
= 85°C
11
10
9
8
7
6
5
4
3
2
1
0
2.0
NTMFS4931N
http://onsemi.com
5
TYPICAL CHARACTERISTICS
0
1000
2000
3000
4000
5000
6000
7000
8000
9000
10000
11000
12000
13000
0 5 10 15 20 25 30
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
C, CAPACITANCE (pF)
Figure 7. Capacitance Variation
T
J
= 25°C
C
oss
C
rss
C
iss
V
GS
= 0 V
10
0 10203040506070809010011012013
0
Figure 8. Gate−To−Source and Drain−To−Source
Voltage vs. Total Charge
Q
G
, TOTAL GATE CHARGE (nC)
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
T
J
= 25°C
V
DD
= 15 V
V
GS
= 10 V
I
D
= 30 A
Q
GS
Q
GD
1
10
100
1000
10000
1 10 100
t, TIME (ns)
Figure 9. Resistive Switching Time
Variation vs. Gate Resistance
R
G
, GATE RESISTANCE (W)
t
r
t
d(off)
t
d(on)
t
f
V
DD
= 15 V
I
D
= 15 A
V
GS
= 10 V
0
5
10
15
20
25
30
0.4 0.5 0.6 0.7 0.8 0.9 1
.0
V
SD
, SOURCE−TO−DRAIN VOLTAGE (V)
V
GS
= 0 V
Figure 10. Diode Forward Voltage vs. Current
T
J
= 25°C
T
J
= 125°C
I
D
, DRAIN CURRENT (A)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
R
DS(on)
LIMIT
THERMAL LIMIT
PACKAGE LIMIT
0 V < V
GS
< 10 V
SINGLE PULSE
T
C
= 25°C
1 ms
10 ms
10 ms
dc
100 ms
0
20
40
60
80
100
120
140
160
180
200
220
240
260
25 50 75 100 125 15
0
1 10 1000.1
1
10
100
1000
T
J
, STARTING JUNCTION TEMPERATURE (°C)
I
D
= 41 A
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
E
AS
, SINGLE PULSE DRAIN−TO−SOURCE
AVALANCHE ENERGY (mJ)
Q
T
0.01
0.1
0.01
9
8
7
6
5
4
3
2
1
0
0.3
100 ms
NTMFS4931N
http://onsemi.com
6
TYPICAL CHARACTERISTICS
100
0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
0.1
0.2
0.02
D = 0.5
0.05
SINGLE PULSE
r(t)
(°C/W)
t, TIME (s)
Figure 13. Thermal Response
0.01
0.00
20.00
40.00
60.00
80.00
100.00
120.00
140.00
160.00
180.00
200.00
220.00
240.00
260.00
0 102030405060708090100
GFS (S)
I
D
(A)
Figure 14. GFS vs. I
D
10
1
0.1
0.01

NTMFS4931NT1G

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
MOSFET NFET SO8FL 30V 236A
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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