OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

P6SMB100AT3

P1-P3P4-P6P7-P7
© Semiconductor Components Industries, LLC, 2010
January, 2010 − Rev. 10
1 Publication Order Number:
P6SMB6.8AT3/D
P6SMB6.8AT3 Series
600 Watt Peak Power Zener
Transient Voltage
Suppressors
Unidirectional*
The SMB series is designed to protect voltage sensitive
components from high voltage, high energy transients. They have
excellent clamping capability, high surge capability, low zener
impedance and fast response time. The SMB series is supplied in
ON Semiconductor’s exclusive, cost-effective, highly reliable
SURMETIC® package and is ideally suited for use in
communication systems, automotive, numerical controls, process
controls, medical equipment, business machines, power supplies and
many other industrial/consumer applications.
Specification Features:
• Working Peak Reverse Voltage Range − 5.8 to 171 V
• Standard Zener Breakdown Voltage Range − 6.8 to 200 V
• Peak Power − 600 W @ 1 ms
• ESD Rating of Class 3 (>16 kV) per Human Body Model
• Maximum Clamp Voltage @ Peak Pulse Current
• Low Leakage < 5 mA Above 10 V
• UL 497B for Isolated Loop Circuit Protection
• Response Time is Typically < 1 ns
• Pb−Free Packages are Available
Mechanical Characteristics:
CASE:
Void-free, transfer-molded, thermosetting plastic
FINISH: All external surfaces are corrosion resistant and leads are
readily solderable
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:
260°C for 10 Seconds
LEADS: Modified L−Bend providing more contact area to bond pads
POLARITY: Cathode indicated by polarity band
MOUNTING POSITION: Any
MAXIMUM RATINGS
Please See the Table on the Following Page
*Please see P6SMB11CAT3 to P6SMB91CAT3 for Bidirectional devices.
PLASTIC SURFACE MOUNT
ZENER OVERVOLTAGE
TRANSIENT SUPPRESSORS
5.8−171 VOLTS
600 WATT PEAK POWER
Cathode Anode
Device Package Shipping
†
ORDERING INFORMATION
P6SMBxxxAT3 SMB 2500/Tape & Reel
SMB
CASE 403A
PLASTIC
P6SMBxxxAT3G SMB
(Pb−Free)
2500/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
A = Assembly Location
Y = Year
WW = Work Week
xx = Device Code (Refer to page 3)
G = Pb−Free Package
MARKING DIAGRAM
(Note: Microdot may be in either location)
http://onsemi.com
AYWW
xx G
G
Uni−Directional TVS
I
PP
I
F
V
I
I
R
I
T
V
RWM
V
C
V
BR
V
F
P6SMB6.8AT3 Series
http://onsemi.com
2
MAXIMUM RATINGS
Rating Symbol Value Unit
Peak Power Dissipation (Note 1) @ T
L
= 25°C, Pulse Width = 1 ms P
PK
600 W
DC Power Dissipation @ T
L
= 75°C
Measured Zero Lead Length (Note 2)
Derate Above 75°C
Thermal Resistance from Junction−to−Lead
P
D
R
q
JL
3.0
40
25
W
mW/°C
°C/W
DC Power Dissipation (Note 3) @ T
A
= 25°C
Derate Above 25°C
Thermal Resistance from Junction−to−Ambient
P
D
R
q
JA
0.55
4.4
226
W
mW/°C
°C/W
Forward Surge Current (Note 4) @ T
A
= 25°C I
FSM
100 A
Operating and Storage Temperature Range T
J
, T
stg
−65 to +150 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. 10 X 1000 ms, non−repetitive
2. 1″ square copper pad, FR−4 board
3. FR−4 board, using ON Semiconductor minimum recommended footprint, as shown in 403A case outline dimensions spec.
4. 1/2 sine wave (or equivalent square wave), PW = 8.3 ms, duty cycle = 4 pulses per minute maximum.
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted, V
F
= 3.5 V Max. @
I
F
(Note 4) = 30 A) (Note 5)
Symbol
Parameter
I
PP
Maximum Reverse Peak Pulse Current
V
C
Clamping Voltage @ I
PP
V
RWM
Working Peak Reverse Voltage
I
R
Maximum Reverse Leakage Current @ V
RWM
V
BR
Breakdown Voltage @ I
T
I
T
Test Current
QV
BR
Maximum Temperature Coefficient of V
BR
I
F
Forward Current
V
F
Forward Voltage @ I
F
5. 1/2 sine wave or equivalent, PW = 8.3 ms, non−repetitive
duty cycle
P6SMB6.8AT3 Series
http://onsemi.com
3
ELECTRICAL CHARACTERISTICS (Devices listed in bold, italic are ON Semiconductor Preferred devices.)
Device
Device
Marking
V
RWM
(Note 6)
I
R
@
V
RWM
Breakdown Voltage V
C
@ I
PP
(Note 8)
QV
BR
C
typ
(Note 9)
V
BR
V (Note 7) @ I
T
V
C
I
PP
V
mA
Min Nom Max mA
V A %/°C pF
P6SMB6.8AT3, G
P6SMB7.5AT3, G
P6SMB8.2AT3, G
P6SMB9.1AT3, G
6V8A
7V5A
8V2A
9V1A
5.8
6.4
7.02
7.78
1000
500
200
50
6.45
7.13
7.79
8.65
6.8
7.51
8.2
9.1
7.14
7.88
8.61
9.55
10
10
10
1
10.5
11.3
12.1
13.4
57
53
50
45
0.057
0.061
0.065
0.068
2380
2180
2015
1835
P6SMB10AT3, G
P6SMB11AT3, G
P6SMB12AT3, G
P6SMB13AT3, G
10A
11A
12A
13A
8.55
9.4
10.2
11.1
10
5
5
5
9.5
10.5
11.4
12.4
10
11.05
12
13.05
10.5
11.6
12.6
13.7
1
1
1
1
14.5
15.6
16.7
18.2
41
38
36
33
0.073
0.075
0.078
0.081
1690
1550
1435
1335
P6SMB15AT3, G
P6SMB16AT3, G
P6SMB18AT3, G
P6SMB20AT3, G
15A
16A
18A
20A
12.8
13.6
15.3
17.1
5
5
5
5
14.3
15.2
17.1
19
15.05
16
18
20
15.8
16.8
18.9
21
1
1
1
1
21.2
22.5
25.2
27.7
28
27
24
22
0.084
0.086
0.088
0.09
1175
1110
1000
910
P6SMB22AT3,G
P6SMB24AT3, G
P6SMB27AT3, G
P6SMB30AT3, G
22A
24A
27A
30A
18.8
20.5
23.1
25.6
5
5
5
5
20.9
22.8
25.7
28.5
22
24
27.05
30
23.1
25.2
28.4
31.5
1
1
1
1
30.6
33.2
37.5
41.4
20
18
16
14.4
0.092
0.094
0.096
0.097
835
775
700
635
P6SMB33AT3, G
P6SMB36AT3, G
P6SMB39AT3, G
P6SMB43AT3, G
33A
36A
39A
43A
28.2
30.8
33.3
36.8
5
5
5
5
31.4
34.2
37.1
40.9
33.05
36
39.05
43.05
34.7
37.8
41
45.2
1
1
1
1
45.7
49.9
53.9
59.3
13.2
12
11.2
10.1
0.098
0.099
0.1
0.101
585
540
500
460
P6SMB47AT3, G
P6SMB51AT3, G
P6SMB56AT3, G
P6SMB62AT3, G
47A
51A
56A
62A
40.2
43.6
47.8
53
5
5
5
5
44.7
48.5
53.2
58.9
47.05
51.05
56
62
49.4
53.6
58.8
65.1
1
1
1
1
64.8
70.1
77
85
9.3
8.6
7.8
7.1
0.101
0.102
0.103
0.104
425
395
365
335
P6SMB68AT3, G
P6SMB75AT3, G
P6SMB82AT3, G
P6SMB91AT3, G
68A
75A
82A
91A
58.1
64.1
70.1
77.8
5
5
5
5
64.6
71.3
77.9
86.5
68
75.05
82
91
71.4
78.8
86.1
95.5
1
1
1
1
92
103
113
125
6.5
5.8
5.3
4.8
0.104
0.105
0.105
0.106
305
280
260
235
P6SMB100AT3, G
P6SMB110AT3, G
P6SMB120AT3, G
P6SMB130AT3, G
100A
110A
120A
130A
85.5
94
102
111
5
5
5
5
95
105
114
124
100
110.5
120
130.5
105
116
126
137
1
1
1
1
137
152
165
179
4.4
4.0
3.6
3.3
0.106
0.107
0.107
0.107
215
200
185
170
P6SMB150AT3, G
P6SMB160AT3, G
P6SMB180AT3, G
150A
160A
180A
128
136
154
5
5
5
143
152
171
150.5
160
180
158
168
189
1
1
1
207
219
246
2.9
2.7
2.4
0.108
0.108
0.108
150
140
130
P6SMB200AT3, G 200A 171 5 190 200 210 1 274 2.2 0.108 115
6. A transient suppressor is normally selected according to the working peak reverse voltage (V
RWM
), which should be equal to or greater than
the DC or continuous peak operating voltage level.
7. V
BR
measured at pulse test current I
T
at an ambient temperature of 25°C.
8. Surge current waveform per Figure 2 and derate per Figure 3.
9. Bias Voltage = 0 V, F = 1 MHz, T
J
= 25°C
* The “G” suffix indicates Pb−Free package available.
P1-P3P4-P6P7-P7

P6SMB100AT3

Mfr. #:
Buy P6SMB100AT3
Manufacturer:
ON Semiconductor
Description:
ESD Suppressors / TVS Diodes 100V 600W
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet