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BYG21KHM3_A/H

P1-P3P4-P5
BYG21K-M3/HM3, BYG21M-M3/HM3
www.vishay.com
Vishay General Semiconductor
Revision: 23-Feb-16
1
Document Number: 89476
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fast Avalanche SMD Rectifier
FEATURES
• Low profile package
• Ideal for automated placement
• Glass passivated pellet chip junction
• Low reverse current
• Soft recovery characteristic
• Fast reverse recovery time
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
• AEC-Q101 qualified
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in fast switching rectification of power supply,
inverters, converters, and freewheeling diodes for
consumer, automotive, and telecommunication.
MECHANICAL DATA
Case: DO-214AC (SMA)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Base P/NHM3 - halogen-free, RoHS-compliant, and
AEC-Q101 qualified
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 2 whisker test, HM3 suffix
meets JESD 201 class 2 whisker test
Polarity: Color band denotes the cathode end
PRIMARY CHARACTERISTICS
I
F(AV)
1.5 A
V
RRM
800 V, 1000 V
I
FSM
30 A
I
R
1.0 μA
V
F
1.6 V
t
rr
120 ns
E
R
20 mJ
T
J
max. 150 °C
Package DO-214AC (SMA)
Diode variation Single die
DO-214AC (SMA)
MAXIMUM RATINGS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL BYG21K BYG21M UNIT
Device marking code BYG21K BYG21M
Maximum repetitive peak reverse voltage V
RRM
800 1000 V
Average forward current I
F(AV)
1.5 A
Peak forward surge current 10 ms single half sine-wave
superimposed on rated load
I
FSM
30 A
Pulse energy in avalanche mode, non repetitive
(inductive load switch off) I
(BR)R
= 1 A, T
J
= 25 °C
E
R
20 mJ
Operating junction and storage temperature range T
J
, T
STG
-55 to +150 °C
BYG21K-M3/HM3, BYG21M-M3/HM3
www.vishay.com
Vishay General Semiconductor
Revision: 23-Feb-16
2
Document Number: 89476
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
Notes
(1)
Mounted on epoxy-glass hard tissue
(2)
Mounted on epoxy-glass hard tissue, 50 mm
2
35 μm Cu
(3)
Mounted on Al-oxide-ceramic (Al
2
O
3
), 50 mm
2
35 μm Cu
Note
(1)
AEC-Q101 qualified
RATINGS AND CHARACTERISTICS CURVES (T
A
= 25 °C unless otherwise noted)
Fig. 1 - Forward Current vs. Forward Voltage Fig. 2 - Max. Average Forward Current vs. Ambient Temperature
ELECTRICAL CHARACTERISTICS (T
A
= 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL BYG21K BYG21M UNIT
Maximum instantaneous
forward voltage
I
F
= 1 A
T
J
= 25 °C V
F
(1)
1.5
V
I
F
= 1.5 A 1.6
Maximum reverse current V
R
= V
RRM
T
J
= 25 °C
I
R
1
μA
T
J
= 100 °C 10
Maximum reverse
recovery time
I
F
= 0.5 A, I
R
= 1.0 A,
I
rr
= 0.25 A
t
rr
120 ns
THERMAL CHARACTERISTICS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL BYG21K BYG21M UNIT
Typical thermal resistance, junction to lead, T
L
= const. R
JL
25 °C/W
Typical thermal resistance, junction to ambient
R
JA
(1)
150
°C/WR
JA
(2)
125
R
JA
(3)
100
ORDERING INFORMATION (Example)
PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE
BYG21K-M3/TR 0.064 TR 1800 7" diameter plastic tape and reel
BYG21K-M3/TR3 0.064 TR3 7500 13" diameter plastic tape and reel
BYG21KHM3/TR
(1)
0.064 TR 1800 7" diameter plastic tape and reel
BYG21KHM3/TR3
(1)
0.064 TR3 7500 13" diameter plastic tape and reel
0.001
0.01
0.1
1
10
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
Forward Voltage (V)
Forward Current (A)
T
J
= 150 °C
T
J
= 25 °C
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
Ambient Temperature (°C)
Average Forward Current (A)
1007550250 125 150
V
R
= V
RRM
Half Sine-Wave
R
θJA
= 25 K/W
R
θJA
= 125 K/W
R
θJA
= 150 K/W
BYG21K-M3/HM3, BYG21M-M3/HM3
www.vishay.com
Vishay General Semiconductor
Revision: 23-Feb-16
3
Document Number: 89476
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 3 - Reverse Current vs. Junction Temperature
Fig. 4 - Max. Reverse Power Dissipation vs. Junction Temperature
Fig. 5 - Diode Capacitance vs. Reverse Voltage
Fig. 6 - Max. Reverse Recovery Charge vs. Forward Current
Fig. 7 - Thermal Response
1
10
100
25 50 75 100 125 150
Reverse Current (µA)
Junction Temperat
u
re (°C)
V
R
= V
RRM
0
20
40
60
80
100
120
25 50 75 100 125 150
Reverse Power Dissipation (mW)
Junction Temperature (°C)
V
R
= V
RRM
P
R
- Limit
at 100 % V
R
P
R
- Limit
at 80 % V
R
0
5
10
15
20
25
0.1 1 10 100
f = 1 MHz
Reverse Voltage (V)
Diode Capacitance (pF)
T
A
= 125 °C
0
50
100
150
200
0 0.2 0.4 0.6 0.8 1.0
Reverse Recovery Charge (nC)
Forward Current (A)
T
A
= 100 °C
T
A
= 25 °C
T
A
= 75 °C
T
A
= 50 °C
I
R
= 0.5 A, i
R
= 0.125 A
1
10
100
1000
Thermal Resistance for Pulse Cond. (K/W)
Pulse Length (s)
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
Single Pulse
125 K/W DC
t
p
/T = 0.5
t
p
/T = 0.2
t
p
/T = 0.1
t
p
/T = 0.05
t
p
/T = 0.02
t
p
/T = 0.01
P1-P3P4-P5

BYG21KHM3_A/H

Mfr. #:
Buy BYG21KHM3_A/H
Manufacturer:
Vishay Semiconductors
Description:
Rectifiers 1.5A,800V,120nS AVAL AEC-Q101 Qualified
Lifecycle:
New from this manufacturer.
Delivery:
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