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SIR800DP-T1-GE3

P1-P3P4-P6P7-P7
www.vishay.com
4
Document Number: 65738
S10-0637-Rev. A, 22-Mar-10
Vishay Siliconix
SiR800DP
New Product
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Source-Drain Diode Forward Voltage
Threshold Voltage
0.001
0.0 0.2 0.6 1.00.4 0.8 1.2
0.01
1
0.1
10
100
I
S
- Source Current (A)
V
SD
- Source-to-Drain Voltage (V)
T
J
= 25 °C
T
J
= 150 °C
- 0.7
- 50 - 25 25 75 1250 50 100 150
- 0.5
- 0.1
- 0.3
0.1
0.3
T
J
- Junction Temperature (°C)
V
GS(th)
- Variance (V)
I
D
= 5 mA
I
D
= 250 μA
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
0
02 64810
0.0064
0.0048
0.0032
0.0016
0.0080
V
GS
- Gate-to-Source Voltage (V)
R
DS(on)
- On-Resistance (Ω)
T
J
= 125 °C
T
J
= 25 °C
I
D
= 15 A
0
0.001 0.01 0.1 1 10
40
80
120
160
200
Time (s)
Power (W)
Safe Operating Area, Junction-to-Ambient
0.01
0.01 0.1 1 10010
0.1
1
10
100
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is specied
I
D
- Drain Current (A)
1 ms
10 ms
1 s
Limited by R
DS(on)
*
10 s
100 ms
DC
BVDSS Limited
T
A
= 25 °C
Single Pulse
Document Number: 65738
S10-0637-Rev. A, 22-Mar-10
www.vishay.com
5
Vishay Siliconix
SiR800DP
New Product
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
* The power dissipation P
D
is based on T
J(max)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Current Derating*
0
0 25 50 75 100 150125
30
60
90
120
150
T
C
- Case Temperature (°C)
I
D
- Drain Current (A)
Package Limited
Power, Junction-to-Case
0
0 25 50 75 100 125 150
18
36
54
72
90
T
C
- Case Temperature (°C)
Power (W)
Power, Junction-to-Ambient
0
0 25 50 75 100 125 150
0.5
1.0
1.5
2.0
2.5
T
A
- Ambient Temperature (°C)
Power (W)
www.vishay.com
6
Document Number: 65738
S10-0637-Rev. A, 22-Mar-10
Vishay Siliconix
SiR800DP
New Product
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?65738
.
Normalized Thermal Transient Impedance, Junction-to-Ambient
10
-4
10
-3
10
-2
10
-1
1 10 100 1000
1
0.1
0.01
Square Wave Pulse Duration (s)
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
Single Pulse
0.2
0.05
0.1
0.02
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 65 °C/W
3. T
JM
- T
A
= P
DM
Z
thJA
(t)
t
1
t
2
4. Surface Mounted
t
1
P
DM
t
2
Normalized Thermal Transient Impedance, Junction-to-Case
10
-4
10
-3
10
-2
10
-1
101
1
0.1
0.01
Square Wave Pulse Duration (s)
Normalized Effective Transient
Thermal Impedance
Single Pulse
0.02
Duty Cycle = 0.5
0.2
0.1
0.05
P1-P3P4-P6P7-P7

SIR800DP-T1-GE3

Mfr. #:
Buy SIR800DP-T1-GE3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET 20V Vds 12V Vgs PowerPAK SO-8
Lifecycle:
New from this manufacturer.
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