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MC100ELT25DTR2

P1-P3P4-P6P7-P8
© Semiconductor Components Industries, LLC, 2015
August, 2015 − Rev. 14
1 Publication Order Number:
MC10ELT25/D
MC10ELT25, MC100ELT25
-5 V Differential ECL to TTL
Translator
Description
The MC10ELT/100ELT25 is a differential ECL to TTL translator.
Because ECL levels are used, a +5 V, −5.2 V (or −4.5 V) and ground
are required. The small outline 8-lead package and the single gate of
the ELT25 makes it ideal for those applications where space,
performance and low power are at a premium.
The V
BB
pin, an internally generated voltage supply, is available to
this device only. For single-ended input conditions, the unused
differential input is connected to V
BB
as a switching reference voltage.
V
BB
may also rebias AC coupled inputs. When used, decouple V
BB
and V
CC
via a 0.01 mF capacitor and limit current sourcing or sinking
to 0.5 mA. When not used, V
BB
should be left open.
The 100 Series contains temperature compensation.
Features
• 2.6 ns Typical Propagation Delay
• 100 MHz F
MAX
CLK
• 24 mA TTL Outputs
• Flow Through Pinouts
• Operating Range: V
CC
= 4.5 V to 5.5 V with GND = 0 V;
V
EE
= −4.2 V to −5.7 V with GND = 0 V
• Internal Input 50 KW Pulldown Resistors
• Q Output will default HIGH with inputs open or < 1.3 V
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
A = Assembly Location
L = Wafer Lot
Y = Year
W = Work Week
G = Pb−Free Package
H = MC10
K = MC100
5F = MC10
2U = MC100
M = Date Code
SOIC−8
D SUFFIX
CASE 751
MARKING DIAGRAMS*
TSSOP−8
DT SUFFIX
CASE 948R
ALYWG
G
HT25
ALYWG
G
KT25
1
8
1
8
1
8
www.onsemi.com
*For additional marking information, refer to
Application Note AND8002/D.
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
ORDERING INFORMATION
1
8
HLT25
ALYW
G
1
8
KLT25
ALYW
G
1
8
DFN8
MN SUFFIX
CASE 506AA
5F MG
G
14
2U MG
G
14
(Note: Microdot may be in either location)
MC10ELT25, MC100ELT25
www.onsemi.com
2
Figure 1. 8−Lead Pinout (Top View) and Logic
Diagram
1
2
3
45
6
7
8
Q
GND
V
CC
D
NCD
V
BB
V
EE
ECL
TTL
Table 1. PIN DESCRIPTION
Pin Function
D, D ECL Differential Inputs
Q TTL Output
V
BB
Reference Voltage Output
V
CC
Positive Supply
V
EE
Negative Supply
GND Ground
NC No Connect
EP (DFN8 only) Thermal exposed pad must be con-
nected to a sufficient thermal conduit. Electric-
ally connect to the most negative supply (GND)
or leave unconnected, floating open.
Table 2. ATTRIBUTES
Characteristics Value
Internal Input Pulldown Resistor
75 kW
Internal Input Pullup Resistor N/A
ESD Protection Human Body Model
Machine Model
> 1 kV
> 400 V
Moisture Sensitivity, Indefinite Time Out of Drypack (Note 1) Pb−Free Pkg
SOIC−8
TSSOP−8
DFN8
Level 1
Level 3
Level 1
Flammability Rating Oxygen Index: 28 to 34 UL 94 V−0 @ 0.125 in
Transistor Count 38 Devices
Meets or exceeds JEDEC Spec EIA/JESD78 IC Latchup Test
1. For additional information, see Application Note AND8003/D.
Table 3. MAXIMUM RATINGS
Symbol Parameter Condition 1 Condition 2 Rating Unit
V
CC
Positive Power Supply GND = 0 V V
EE
= −5.0 V 7 V
V
EE
Negative Power Supply GND = 0 V V
CC
= +5.0 V −8 V
V
IN
Input Voltage GND = 0 V 0 to V
EE
V
I
BB
V
BB
Sink/Source ± 0.5 mA
T
A
Operating Temperature Range −40 to +85 °C
T
stg
Storage Temperature Range −65 to +150 °C
q
JA
Thermal Resistance (Junction−to−Ambient) 0 lfpm
500 lfpm
SOIC−8
SOIC−8
190
130
°C/W
°C/W
q
JC
Thermal Resistance (Junction−to−Case) Standard Board SOIC−8 41 to 44 °C/W
q
JA
Thermal Resistance (Junction−to−Ambient) 0 lfpm
500 lfpm
TSSOP−8
TSSOP−8
185
140
°C/W
°C/W
q
JC
Thermal Resistance (Junction−to−Case) Standard Board TSSOP−8 41 to 44 ± 5% °C/W
q
JA
Thermal Resistance (Junction−to−Ambient) 0 lfpm
500 lfpm
DFN8
DFN8
129
84
°C/W
°C/W
T
sol
Wave Solder Pb−Free <2 to 3 sec @ 260°C 265 °C
q
JC
Thermal Resistance (Junction−to−Case) (Note 2) DFN8 35 to 40 °C/W
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
2. JEDEC standard multilayer board − 2S2P (2 signal, 2 power)
MC10ELT25, MC100ELT25
www.onsemi.com
3
Table 4. 10ELT SERIES NECL INPUT DC CHARACTERISTICS V
CC
= 5.0 V; V
EE
= −5.0 V; GND = 0 V (Note 3)
Symbo
l
Characteristic
−40°C 25°C 85°C
Uni
t
Min Typ Max Min Typ Max Min Typ Max
V
IH
Input HIGH Voltage (Single−Ended) (Note 4) −1230 −890 −1130 −810 −1060 −720 mV
V
IL
Input LOW Voltage (Single−Ended) (Note 4) −1950 −1500 −1950 −1480 −1950 −1445 mV
V
BB
Output Voltage Reference −1.43 −1.30 −1.35 −1.25 −1.31 −1.19 V
V
IHCMR
Input HIGH Voltage Common Mode Range
(Differential) (Notes 4 and 5)
−2.8 0.0 −2.8 0.0 −2.8 0.0 V
I
IH
Input HIGH Current 255 175 175
mA
I
IL
Input LOW Current 0.5 0.5 0.3
mA
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
board with maintained transverse airflow greater than 500 lfpm.
3. Input parameters vary 1:1 with GND. V
EE
can vary +0.06 V to −0.5 V.
4. TTL output R
L
= 500 W to GND
5. V
IHCMR
min varies 1:1 with V
EE
, V
IHCMR
max varies 1:1 with GND.
Table 5. 100ELT SERIES NECL INPUT DC CHARACTERISTICS V
CC
= 5.0 V; V
EE
= −5.0 V; GND = 0 V (Note 6)
Symbo
l
Characteristic
−40°C 25°C 85°C
Uni
t
Min Typ Max Min Typ Max Min Typ Max
V
IH
Input HIGH Voltage (Single−Ended) (Note 7) −1165 −880 −1165 −880 −1165 −880 mV
V
IL
Input LOW Voltage (Single−Ended) (Note 7) −1810 −1475 −1810 −1475 −1810 −1475 mV
V
BB
Output Voltage Reference −1.38 −1.26 −1.38 −1.26 −1.38 −1.26 V
V
IHCMR
Input HIGH Voltage Common Mode Range
(Differential) (Notes 7 and 8)
−2.8 0.0 −2.8 0.0 −2.8 0.0 V
I
IH
Input HIGH Current 255 175 175
mA
I
IL
Input LOW Current 0.5 0.5 0.5
mA
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
board with maintained transverse airflow greater than 500 lfpm.
6. Input parameters vary 1:1 with GND. V
EE
can vary +0.8 V to −0.5 V.
7. TTL output R
L
= 500 W to GND
8. V
IHCMR
min varies 1:1 with V
EE
, V
IHCMR
max varies 1:1 with GND.
Table 6. TTL OUTPUT DC CHARACTERISTICS V
CC
= 4.5 V to 5.5 V; T
A
= −40°C to +85°C
Symbol Characteristic Condition Min Typ Max Unit
V
OH
Output HIGH Voltage I
OH
= −3.0 mA 2.4 V
V
OL
Output LOW Voltage I
OL
= 24 mA 0.5 V
I
CCH
Power Supply Current 11 16 mA
I
CCL
Power Supply Current 13 18 mA
I
EE
Negative Power Supply Current 15 21 mA
I
OS
Output Short Circuit Current −150 −60 mA
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
board with maintained transverse airflow greater than 500 lfpm.
P1-P3P4-P6P7-P8

MC100ELT25DTR2

Mfr. #:
Buy MC100ELT25DTR2
Manufacturer:
ON Semiconductor
Description:
Translation - Voltage Levels -5V Diff ECL to TTL
Lifecycle:
New from this manufacturer.
Delivery:
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