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UNR9219J0L

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P19
Transistors with built-in Resistor
1
Publication date: January 2004 SJH00039BED
UNR921xJ Series (UN921xJ Series)
Silicon NPN epitaxial planar type
For digital circuits
■ Features
• Costs can be reduced through downsizing of the equipment and
reduction of the number of parts.
• SS-Mini type package, allowing automatic insertion through tape
packing.
■ Resistance by Part Number
Marking Symbol
(R
1
)(R
2
)
• UNR9210J (UN9210J) 8L 47 kΩ
• UNR9211J (UN9211J) 8A 10 kΩ 10 kΩ
• UNR9212J (UN9212J) 8B 22 kΩ 22 kΩ
• UNR9213J (UN9213J) 8C 47 kΩ 47 kΩ
• UNR9214J (UN9214J) 8D 10 kΩ 47 kΩ
• UNR9215J (UN9215J) 8E 10 kΩ
• UNR9216J (UN9216J) 8F 4.7 kΩ
• UNR9217J (UN9217J) 8H 22 kΩ
• UNR9218J (UN9218J) 8I 0.51 kΩ 5.1 kΩ
• UNR9219J (UN9219J) 8K 1 kΩ 10 kΩ
• UNR921AJ 8X 100 kΩ 100 kΩ
• UNR921BJ 8Y 100 kΩ
• UNR921CJ 8Z 47 kΩ
• UNR921DJ (UN921DJ) 8M 47 kΩ 10 kΩ
• UNR921EJ (UN921EJ) 8N 47 kΩ 22 kΩ
• UNR921FJ (UN921FJ) 8O 4.7 kΩ 10 kΩ
• UNR921KJ (UN921KJ) 8P 10 kΩ 4.7 kΩ
• UNR921LJ (UN921LJ) 8Q 4.7 kΩ 4.7 kΩ
• UNR921MJ EL 2.2 kΩ 47 kΩ
• UNR921NJ EX 4.7 kΩ 47 kΩ
• UNR921TJ (UN921TJ) EZ 22 kΩ 47 kΩ
• UNR921VJ FD 2.2 kΩ 2.2 kΩ
■ Absolute Maximum Ratings T
a
= 25°C
Note) The part numbers in the parenthesis show conventional part number.
0.27
±0.02
3
12
0.12
+0.03
–0.01
0.80
±0.05
(0.80)
0.85
1.60
±0.05
0 to 0.02
0.10 max.
0.70
+0.05
–0.03
(0.375)
5˚
5˚
1.60
+0.05
–0.03
1.00
±0.05
(0.50)(0.50)
+0.05
–0.03
B
C
E
R
1
R
2
Internal Connection
Unit: mm
1: Base
2: Emitter
3: Collector
EIAJ: SC-89 SSMini3-F1 Package
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) V
CBO
50 V
Collector-emitter voltage (Base open) V
CEO
50 V
Collector current I
C
100 mA
Total power dissipation
P
T
125 mW
Junction temperature T
j
125 °C
Storage temperature T
stg
−55 to +125 °C
2
UNR921xJ Series Transistors with built-in Resistor
SJH00039BED
■ Electrical Characteristics T
a
= 25°C ± 3°C
Parameter Symbol Conditions Min Typ Max Unit
Collector-base voltage (Emitter open) V
CBO
I
C
= 10 µA, I
E
= 050 V
Collector-emitter voltage (Base open) V
CEO
I
C
= 2 mA, I
B
= 050V
Collector-base cut-off current (Emitter open)
I
CBO
V
CB
= 50 V, I
E
= 0 0.1 µA
Collector-emitter cut-off current (Base open)
I
CEO
V
CE
= 50 V, I
B
= 0 0.5 µA
Emitter- UNR9210J/9215J/ I
EBO
V
EB
= 6 V, I
C
= 0 0.01 mA
base
9216J/9217J/921BJ
cut-off UNR9213J/921AJ 0.1
current
UNR9212J/9214J/921DJ/ 0.2
(Collector
921EJ/921MJ/921NJ/921TJ
open) UNR9211J 0.5
UNR921FJ/921KJ 1.0
UNR9219J 1.5
UNR9218J/921CJ/921LJ/921VJ
2.0
Forward UNR921VJ h
FE
V
CE
= 10 V, I
C
= 5 mA 6 20
current UNR9218J/921KJ/921LJ 20
transfer UNR9219J/921DJ/921FJ 30
ratio UNR9211J 35
UNR9212J/921EJ 60
UNR9213J/9214J/921AJ/
80
921CJ/921MJ
UNR921NJ/921TJ 80 400
UNR9210J/9215J/9216J/
160 460
9217J/921BJ
Collector-emitter saturation voltage V
CE(sat)
I
C
= 10 mA, I
B
= 0.3 mA 0.25 V
Output voltage high-level V
OH
V
CC
= 5 V, V
B
= 0.5 V, R
L
= 1 kΩ 4.9 V
Output voltage low-level V
OL
V
CC
= 5 V, V
B
= 2.5 V, R
L
= 1 kΩ 0.2 V
UNR9213J/921BJ/921KJ
V
CC
= 5 V, V
B
= 3.5 V, R
L
= 1 kΩ
UNR921DJ V
CC
= 5 V, V
B
= 10 V, R
L
= 1 kΩ
UNR921EJ V
CC
= 5 V, V
B
= 6 V, R
L
= 1 kΩ
UNR921AJ V
CC
= 5 V, V
B
= 5 V, R
L
= 1 kΩ
Transition frequency f
T
V
CB
= 10 V, I
E
= −2 mA, f = 200 MHz 150 MHz
Input UNR9218J R
1
−30% 0.51 +30% kΩ
resistance UNR9219J 1
UNR921MJ/921VJ 2.2
UNR9216J/921FJ/921LJ/921NJ
4.7
UNR9211J/9214J/9215J/921KJ
10
UNR9212J/9217J/921TJ 22
UNR9210J/9213J/921DJ/921EJ
47
UNR921AJ/921BJ 100
3
Transistors with built-in Resistor UNR921xJ Series
SJH00039BED
■ Electrical Characteristics (continued) T
a
= 25°C ± 3°C
Characteristics charts of UNR9210J
I
C
V
CE
V
CE(sat)
I
C
h
FE
I
C
Common characteristics chart
P
T
T
a
0
0 16040 12080
150
125
100
75
50
25
Ambient temperature T
a
(
°C
)
Total power dissipation P
T
(
mW
)
012210486
0
60
50
40
30
20
10
Collector-emitter voltage V
CE
(
V
)
Collector current I
C
(
mA
)
T
a
= 25°C
I
B
= 1.0 mA
0.1 mA
0.3 mA
0.4 mA
0.5 mA
0.6 mA
0.7 mA
0.8 mA
0.9 mA
10
−2
10
−1
10
−1
1
10
10
2
11010
2
I
C
/ I
B
= 10
T
a
= 75°C
25°C
−25°C
Collector-emitter saturation voltage V
CE(sat)
(
V
)
Collector current I
C
(
mA
)
0
1
100
200
300
400
10 10
2
10
3
V
CE
= 10 V
T
a
= 75°C
25°C
−25°C
Forward current transfer ratio h
FE
Collector current I
C
(
mA
)
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Parameter Symbol Conditions Min Typ Max Unit
Emitter-base resistance
UNR921CJ
R
2
−30% 47 +30% kΩ
Rasistance
UNR921MJ R
1
/R
2
0.047
ratio UNR921NJ 0.1
UNR9218J/9219J 0.08 0.10 0.12
UNR9214J 0.17 0.21 0.25
UNR921TJ 0.47
UNR921FJ 0.37 0.47 0.57
UNR921AJ/921VJ 1.0
UNR9211J/9212J/9213J/921LJ
0.8 1.0 1.2
UNR921KJ 1.70 2.13 2.60
UNR921EJ 1.70 2.14 2.60
UNR921DJ 3.7 4.7 5.7
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P19

UNR9219J0L

Mfr. #:
Buy UNR9219J0L
Manufacturer:
Panasonic
Description:
TRANS PREBIAS NPN 125MW SSMINI3
Lifecycle:
New from this manufacturer.
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