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IXRFD630

P1-P3P4-P6P7-P8
30 A Low-Side RF MOSFET Driver
IXRFD630
1
Features
•
High Peak Output Current
•
Low Output Impedance
•
Low Quiescent Supply Current
•
Low Propagation Delay
•
High Capacitive Load Drive Capability
•
Wide Operating Voltage Range
Applications
•
RF MOSFET Driver
•
Class D and E RF Generators
•
Multi-MHz Switch Mode Supplies
•
Pulse Transformer Driver
•
Pulse Laser Diode Driver
•
Pulse Generator
Description
The IXRFD630 is a CMOS high-
speed, high-current gate driver
specifically designed to drive
MOSFETs in Class D and E HF
RF applications as well as other
applications requiring ultrafast
rise and fall times or short mini-
mum pulse widths. The IXRFD630 can source and
sink 30 A of peak current while producing voltage rise
and fall times of less than 4 ns and minimum pulse
widths of 8 ns. The input of the driver is compatible
with TTL or CMOS and is fully immune to latch up over
the entire operating range. Designed with small inter-
nal delays, cross conduction or current shoot-through
is virtually eliminated. The features and wide safety
margin in operating voltage and power make the
IXRFD630 unmatched in performance and value.
The surface mount IXRFD630 is packaged in a low-
inductance RF package incorporating advanced layout
techniques to minimize stray lead inductances for opti-
mum switching performance.
Fig. 1- Block Diagram and Truth Table
IN OUT
0 0
1 1
30 A Low-Side RF MOSFET Driver
IXRFD630
2
Absolute Maximum Ratings
Electrical Characteristics
Unless otherwise noted, T
A
= 25° C, 8V < V
CC
< 30V.
All voltage measurements with respect to GND. IXRFD630 configured as described in Test Conditions.
Symbol Parameter Test Conditions Typ Max Units
V
IH
High input voltage V
CC
= 15V for typical value 3 V
V
IL
Low input voltage V
CC
= 15V for typical value 2.8 0.8 V
V
HYS
Input hysteresis
0.23
V
V
IN
Input voltage range
V
CC
+ 0.3
V
I
IN
Input current
0V≤ V
IN
≤V
CC
10 µA
V
OH
High output voltage
V
V
OL
Low output voltage
0.025 V
R
OH
High output resistance V
CC
= 15V I
OUT
= 100mA 0.25
Ω
R
OL
Low output resistance V
CC
= 15V I
OUT
= 100mA 0.17
Ω
I
PEAK
Peak output current V
CC
= 15V 28
A
I
DC
Continuous output
current 2.5
A
t
R
Rise time
V
CC
=15V C
L
=1nF
C
L
=2nF
4
5
ns
ns
t
F
Fall time
V
CC
=15V C
L
=1nF
C
L
=2nF
4
5.5
ns
ns
t
ONDLY
ON propagation
delay V
CC
=15V C
L
=2nF
24
ns
t
OFFDLY
OFF propagation
delay V
CC
=15V C
L
=2nF 22
ns
PW
min
Minimum pulse width FWHM V
CC
=15V C
L
=1nF 8 ns
V
CC
Power supply voltage Recommended 8 15 18 V
I
CC
Power supply current
V
CC
= 15V, V
IN
= 0V
V
CC
= 15V, V
IN
= 3.5V
V
CC
= 15V, V
IN
= V
CC
0
1
0
1
3
5
mA
mA
mA
3.5
-5
-10
V
CC
-
0.025
Min
Parameter Value
Supply Voltage V
CC
30V
All Other Pins -0.3V to V
CC
+0.3V
Power Dissipation
T
A (AMBIENT)
≤ 25C
T
C (CASE)
≤ 25C
2W
100W
Storage Temperature -40°C to 150°C
Soldering Lead Temperature
(10 seconds maximum)
300°C
Input Voltage Level V
IN
-5V to V
CC
+ 0.3V
Note: Operating the device outside of the “Absolute Maximum Rat-
ings” may cause permanent damage. Typical values indicate condi-
tions for which the device is intended to be functional but do not
guarantee specific performance limits. The guaranteed specifica-
tions apply only for the test conditions listed. Exposure to absolute
maximum conditions for extended periods may impact device reli-
ability.
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD procedures when handling and
assembling.
Parameter Value
Maximum Junction Temperature 150° C
Operating Temperature Range -40° C to 85° C
Thermal Impedance (Junction to Case) R
ӨJC
0.25° C/W
30 A Low-Side RF MOSFET Driver
IXRFD630
3
Output Resistance vs. Supply Voltage
0
0.05
0.1
0.15
0.2
0.25
0.3
0.35
0.4
0 5 10 15 20 25 30 35
Supply Voltage (V)
Output Resistance (Ω)
R
OL
R
OH
Input Threshold vs. Supply Voltage
0
0.5
1
1.5
2
2.5
3
3.5
0 5 10 15 20 25 30
Supply Voltage (V)
Input Threshold (V)
V
IH
V
IL
Propagation Delay vs. Supply Voltage
0
5
10
15
20
25
30
35
40
5 10 15 20
Supply Voltage (V)
Propagation Delay (ns)
OFF Delay
(T
DOFF
)
ON Delay (T
DON
)
Rise Time vs. Supply Voltage
0
1
2
3
4
5
6
7
8
5 10 15 20
Supply Voltage (V)
Rise Time (ns)
C
LOAD
= 0nF
C
LOAD
= 1nF
C
LOAD
= 2nF
C
LOAD
= 3nF
C
LOAD
= 4nF
Fall Time vs. Supply Voltage
0
1
2
3
4
5
6
7
5 10 15 20
Supply Voltage (V)
Fall Time (ns)
C
LOAD
= 0nF
C
LOAD
= 1nF
C
LOAD
= 2nF
C
LOAD
= 3nF
C
LOAD
= 4nF
Quiescent Current vs. Supply Voltage
0
1
2
3
4
5
6
7
5 10 15 20 25
Supply Voltage (V)
Supply Current (mA)
Input Low
Input High
Fig, 2
Fig, 3
Fig, 4 Fig, 5
Fig, 6 Fig, 7
P1-P3P4-P6P7-P8

IXRFD630

Mfr. #:
Buy IXRFD630
Manufacturer:
Littelfuse
Description:
Gate Drivers IXRFD630 30A, 30V MOSFET Driver
Lifecycle:
New from this manufacturer.
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