ADG417BRZ

One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781/329-4700 World Wide Web Site: http://www.analog.com
Fax: 781/326-8703 © Analog Devices, Inc., 1998
REV. A
Information furnished by Analog Devices is believed to be accurate and
reliable. However, no responsibility is assumed by Analog Devices for its
use, nor for any infringements of patents or other rights of third parties
which may result from its use. No license is granted by implication or
otherwise under any patent or patent rights of Analog Devices.
a
LC
2
MOS Precision
Mini-DIP Analog Switch
ADG417
FEATURES
44 V Supply Maximum Ratings
V
SS
to V
DD
Analog Signal Range
Low On Resistance (<35 )
Ultralow Power Dissipation (<35 W)
Fast Switching Times
t
ON
(160 ns max)
t
OFF
(100 ns max)
Break-Before-Make Switching Action
Plug-In Replacement for DG417
APPLICATIONS
Precision Test Equipment
Precision Instrumentation
Battery Powered Systems
Sample Hold Systems
FUNCTIONAL BLOCK DIAGRAM
ADG417
IN
D
S
SWITCH SHOWN FOR A
LOGIC "1" INPUT
PRODUCT HIGHLIGHTS
1. Extended Signal Range
The ADG417 is fabricated on an enhanced LC
2
MOS process,
giving an increased signal range that extends to the supply
rails.
2. Ultralow Power Dissipation
3. Low R
ON
4. Single Supply Operation
For applications where the analog signal is unipolar, the
ADG417 can be operated from a single rail power supply.
The part is fully specified with a single +12 V power supply
and will remain functional with single supplies as low as
+5 V.
GENERAL DESCRIPTION
The ADG417 is a monolithic CMOS SPST switch. This switch
is designed on an enhanced LC
2
MOS process that provides low
power dissipation yet gives high switching speed, low on resis-
tance and low leakage currents.
The on resistance profile of the ADG417 is very flat over the
full analog input range ensuring excellent linearity and low
distortion. The part also exhibits high switching speed and high
signal bandwidth. CMOS construction ensures ultralow power
dissipation making the parts ideally suited for portable and
battery powered instruments.
The ADG417 switch, which is turned ON with a logic low on
the control input, conducts equally well in both directions when
ON and has an input signal range that extends to the supplies.
In the OFF condition, signal levels up to the supplies are
blocked. The ADG417 exhibits break-before-make switching
action for use in multiplexer applications. Inherent in the design
is low charge injection for minimum transients when switching
the digital input.
ADG417* PRODUCT PAGE QUICK LINKS
Last Content Update: 02/23/2017
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DOCUMENTATION
Application Notes
AN-1313: Configuring the AD5422 to Combine Output
Current and Output Voltage to a Single Output Pin
Data Sheet
ADG417: LC
2
MOS Precision Mini-DIP Analog Switch Data
Sheet
REFERENCE MATERIALS
Product Selection Guide
Switches and Multiplexers Product Selection Guide
Technical Articles
CMOS Switches Offer High Performance in Low Power,
Wideband Applications
Data-acquisition system uses fault protection
Enhanced Multiplexing for MEMS Optical Cross Connects
Temperature monitor measures three thermal zones
DESIGN RESOURCES
ADG417 Material Declaration
PCN-PDN Information
Quality And Reliability
Symbols and Footprints
DISCUSSIONS
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SAMPLE AND BUY
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TECHNICAL SUPPORT
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number.
DOCUMENT FEEDBACK
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B Version T Version
–40C to –55C to
Parameter +25C +85C +25C +125C Units Test Conditions/Comments
ANALOG SWITCH
Analog Signal Range V
SS
to V
DD
V
SS
to V
DD
V
R
ON
25 25 typ V
D
= ±12.5 V, I
S
= –10 mA
35 45 35 45 max V
DD
= +13.5 V, V
SS
= –13.5 V
LEAKAGE CURRENTS V
DD
= +16.5 V, V
SS
= –16.5 V
Source OFF Leakage I
S
(OFF) ±0.1 ±0.1 nA typ V
D
= ±15.5 V, V
S
= ⫿15.5 V;
±0.25 ±5 ±0.25 ±15 nA max Test Circuit 2
Drain OFF Leakage I
D
(OFF) ±0.1 ±0.1 nA typ V
D
= ±15.5 V, V
S
= ⫿15.5 V;
±0.25 ±5 ±0.25 ±15 nA max Test Circuit 2
Channel ON Leakage I
D
, I
S
(ON) ±0.1 ±0.1 nA typ V
S
= V
D
= ±15.5 V;
±0.4 ±5 ±0.4 ±30 nA max Test Circuit 3
DIGITAL INPUTS
Input High Voltage, V
INH
2.4 2.4 V min
Input Low Voltage, V
INL
0.8 0.8 V max
Input Current
I
INL
or I
INH
±0.005 ±0.005 µA typ V
IN
= V
INL
or V
INH
±0.5 ±0.5 µA max
DYNAMIC CHARACTERISTICS
2
t
ON
100 100 ns typ R
L
= 300 , C
L
= 35 pF;
160 200 145 200 ns max V
S
= ±10 V; Test Circuit 4
t
OFF
60 60 ns typ R
L
= 300 , C
L
= 35 pF;
100 150 100 150 ns max V
S
= ±10 V; Test Circuit 4
Charge Injection 7 7 pC typ V
S
= 0 V, R
L
= 0 ,
C
L
= 10 nF; Test Circuit 5
OFF Isolation 80 80 dB typ R
L
= 50 , f = 1 MHz;
Test Circuit 6
C
S
(OFF) 6 6 pF typ
C
D
(OFF) 6 6 pF typ
C
D
, C
S
(ON) 55 55 pF typ
POWER REQUIREMENTS V
DD
= +16.5 V, V
SS
= –16.5 V
I
DD
0.0001 0.0001 µA typ V
IN
= 0 V or 5 V
1 2.5 1 2.5 µA max
I
SS
0.0001 0.0001 µA typ
1 2.5 1 2.5 µA max
I
L
0.0001 0.0001 µA typ V
L
= +5.5 V
1 2.5 1 2.5 µA max
NOTES
1
Temperature ranges are as follows: B Version: –40°C to +85°C; T Version: –55°C to +125°C.
2
Guaranteed by design, not subject to production test.
Specifications subject to change without notice.
REV. A
–2–
ADG417–SPECIFICATIONS
Dual Supply
1
(V
DD
= +15 V 10%, V
SS
= –15 V 10%, V
L
= +5 V 10%, GND = 0 V, unless otherwise noted)

ADG417BRZ

Mfr. #:
Manufacturer:
Analog Devices Inc.
Description:
Analog Switch ICs LC2MOS+-15V Prec Mini-DIP SPST
Lifecycle:
New from this manufacturer.
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