ADG417BR

ORDERING GUIDE
Model Temperature Range Package Options*
ADG417BN –40°C to +85°C N-8
ADG417BR –40°C to +85°C SO-8
*N = Plastic DIP, SO = 0.15" Small Outline IC (SOIC).
ADG417
REV. A –3
Single Supply
1
B Version T Version
–40C to –55C to
Parameter +25C +85C +25C +125C Units Test Conditions/Comments
ANALOG SWITCH
Analog Signal Range 0 to V
DD
0 to V
DD
V
R
ON
40 40 typ V
D
= +3 V, +8.5 V, I
S
= –10 mA
60 70 max V
DD
= +10.8 V
LEAKAGE CURRENT V
DD
= +13.2 V
Source OFF Leakage I
S
(OFF) ±0.1 ±0.1 nA typ V
D
= 12.2 V/1 V, V
S
= 1 V/12.2 V;
±0.25 ±5 ±0.25 ±15 nA max Test Circuit 2
Drain OFF Leakage I
D
(OFF) ±0.1 ±0.1 nA typ V
D
= 12.2 V/1 V, V
S
= 1 V/12.2 V;
±0.25 ±5 ±0.25 ±15 nA max Test Circuit 2
Channel ON Leakage I
D
, I
S
(ON) ±0.1 ±0.1 nA typ V
S
= V
D
= 12.2 V/1 V;
±0.4 ±5 ±0.4 ±30 nA max Test Circuit 3
DIGITAL INPUTS
Input High Voltage, V
INH
2.4 2.4 V min
Input Low Voltage, V
INL
0.8 0.8 V max
Input Current
I
INL
or I
INH
±0.005 ±0.005 µA typ V
IN
= V
INL
or V
INH
±0.5 ±0.5 µA max
DYNAMIC CHARACTERISTICS
2
t
ON
180 250 180 250 ns max R
L
= 300 , C
L
= 35 pF;
V
S
= +8 V; Test Circuit 4
t
OFF
85 110 85 110 ns max R
L
= 300 , C
L
= 35 pF;
V
S
= +8 V; Test Circuit 4
Charge Injection 11 11 pC typ V
S
= 0 V, R
S
= 0 ,
C
L
= 10 nF; Test Circuit 5
OFF Isolation 80 80 dB typ R
L
= 50 , f = 1 MHz;
Test Circuit 6
C
S
(OFF) 13 13 pF typ
C
D
(OFF) 13 13 pF typ
C
D
, C
S
(ON) 65 65 pF typ
POWER REQUIREMENTS V
DD
= +13.2 V
I
DD
0.0001 0.0001 µA typ V
IN
= 0 V or 5 V
12.5 12.5 µA max
I
L
0.0001 0.0001 µA typ V
L
= +5.5 V
12.5 12.5 µA max
NOTES
1
Temperature ranges are as follows: B Version: –40°C to +85°C; T Version: –55°C to +125°C.
2
Guaranteed by design, not subject to production test.
Specifications subject to change without notice.
(V
DD
= +12 V 10%, V
SS
= 0 V, V
L
= +5 V 10%, GND = 0 V, unless otherwise noted)
Table I. Truth Table
Logic Switch Condition
0ON
1 OFF
PIN CONFIGURATION
DIP/SOIC
TOP VIEW
(Not to Scale)
8
7
6
5
1
2
3
4
S
NC
GND
D
V
SS
IN
V
L
V
DD
ADG417
NC = NO CONNECT
REV. A–4–
ADG417
ABSOLUTE MAXIMUM RATINGS
1
(T
A
= +25°C unless otherwise noted)
V
DD
to V
SS
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +44 V
V
DD
to GND . . . . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to +25 V
V
SS
to GND . . . . . . . . . . . . . . . . . . . . . . . . . . +0.3 V to –25 V
V
L
to GND . . . . . . . . . . . . . . . . . . . . . . –0.3 V to V
DD
+ 0.3 V
Analog, Digital Inputs
2
. . . . . . . . . . . . . V
SS
– 2 V to V
DD
+2 V
or 30 mA, Whichever Occurs First
Continuous Current, S or D . . . . . . . . . . . . . . . . . . . . . 30 mA
Peak Current, S or D . . . . . . . . . . . . . . . . . . . . . . . . . 100 mA
(Pulsed at 1 ms, 10% Duty Cycle Max)
Operating Temperature Range
Industrial (B Version) . . . . . . . . . . . . . . . . . –40°C to +85°C
Extended (T Version) . . . . . . . . . . . . . . . . –55°C to +125°C
Storage Temperature Range . . . . . . . . . . . . . –65°C to +150°C
Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . 150°C
Plastic Package, Power Dissipation . . . . . . . . . . . . . . . 400 mW
θ
JA
, Thermal Impedance . . . . . . . . . . . . . . . . . . . . 100°C/W
Lead Temperature, Soldering (10 sec) . . . . . . . . . . . +260°C
SOIC Package, Power Dissipation . . . . . . . . . . . . . . . . 400 mW
θ
JA
, Thermal Impedance . . . . . . . . . . . . . . . . . . . . 155°C/W
Lead Temperature, Soldering
Vapor Phase (60 sec). . . . . . . . . . . . . . . . . . . . . . . +215°C
Infrared (15 sec) . . . . . . . . . . . . . . . . . . . . . . . . . . +220°C
NOTES
1
Stresses above those listed under Absolute Maximum Ratings may cause perma-
nent damage to the device. This is a stress rating only; functional operation of the
device at these or any other conditions above those listed in the operational
sections of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability. Only one absolute
maximum rating may be applied at any one time.
2
Overvoltages at IN, S or D will be clamped by internal diodes. Current should be
limited to the maximum ratings given.
V
D
(V
S
) Analog voltage on terminals D, S.
C
S
(OFF) “OFF” switch source capacitance.
C
D
(OFF) “OFF” switch drain capacitance.
C
D
, C
S
(ON) “ON” switch capacitance.
t
ON
Delay between applying the digital control
input and the output switching on.
t
OFF
Delay between applying the digital control
input and the output switching off.
V
INL
Maximum input voltage for logic “0.”
V
INH
Minimum input voltage for logic “1.”
I
INL
(I
INH
) Input current of the digital input.
Charge Injection A measure of the glitch impulse transferred
from the digital input to the analog output
during switching.
Off Isolation A measure of unwanted signal coupling
through an “OFF” channel.
I
DD
Positive supply current.
I
SS
Negative supply current.
I
L
Logic supply current.
TERMINOLOGY
V
DD
Most positive power supply potential.
V
SS
Most negative power supply potential in dual
supplies. In single supply applications, it
may be connected to GND.
V
L
Logic power supply (+5 V).
GND Ground (0 V) reference.
S Source terminal. May be an input or an
output.
D Drain terminal. May be an input or an
output.
IN Logic control input.
R
ON
Ohmic resistance between D and S.
I
S
(OFF) Source leakage current with the switch
“OFF.”
I
D
(OFF) Drain leakage current with the switch
“OFF.”
I
D
, I
S
(ON) Channel leakage current with the switch
“ON.”
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection.
Although the ADG417 features proprietary ESD protection circuitry, permanent damage may
occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD
precautions are recommended to avoid performance degradation or loss of functionality.
WARNING!
ESD SENSITIVE DEVICE
R
ON
V
50
0
15
30
10
–10
20
–15
40
1050–5
V
S
, V
D
– Volts
T
A
= +258C
V
DD
= +12V
V
SS
= –12V
V
DD
= +5V
V
SS
= –5V
V
DD
= +10V
V
SS
= –10V
V
DD
= +15V
V
SS
= –15V
Figure 1. R
ON
as a Function of V
D
(V
S
): Dual Supply Voltage
50
0
15
30
10
–10
20
–15
40
1050–5
R
ON
V
V
S
, V
D
– Volts
+858C
+1258C
+258C
V
DD
= +15V
V
SS
= –15V
V
L
= +5V
Figure 2. R
ON
as a Function of V
D
(V
S
) for Different
Temperatures
0.02
–0.03
15
0.00
–0.02
–10
–0.01
–15
0.01
1050–5
LEAKAGE CURRENT – nA
V
S
, V
D
– Volts
I
D
(OFF)
I
D
(ON)
I
S
(OFF)
V
DD
= +15V
V
SS
= –15V
T
A
= +258C
Figure 3. Leakage Currents as a Function of V
S
(V
D
)
100
0
15
60
20
5
40
0
80
10
R
ON
V
V
S
, V
D
– Volts
T
A
= +258C
V
DD
= +5V
V
SS
= 0V
V
DD
= +10V
V
SS
= 0V
V
DD
= +12V
V
SS
= 0V
V
DD
= +15V
V
SS
= 0V
Figure 4. R
ON
as a Function of V
D
(V
S
): Single Supply
Voltage
R
ON
V
V
S
, V
D
– Volts
100
0
12
60
20
3
40
0
80
9
6
V
DD
= +12V
V
SS
= 0V
V
L
= +5V
+1258C
+258C
+858C
Figure 5. R
ON
as a Function of V
D
(V
S
) for Different
Temperatures
Figure 6. Leakage Currents as a Function of V
S
(V
D
)
Typical Performance Characteristics–ADG417
REV. A –5

ADG417BR

Mfr. #:
Manufacturer:
Analog Devices Inc.
Description:
Analog Switch ICs LC2MOS+-15V Prec Mini-DIP SPST
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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