Nexperia
BC817 series
45 V, 500 mA NPN general-purpose transistors
BC817_SER All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2018. All rights reserved.
Product data sheet Rev. 7 — 18 June 2018
9 / 15
006aaa133
400
200
600
800
h
FE
0
I
C
(mA)
10
- 1
10
3
10
2
1 10
(1)
(2)
(3)
V
CE
= 1 V
(1) T
amb
= 150 °C
(2) T
amb
= 25 °C
(3) T
amb
= -55 °C
Figure 12. BC817-40: DC current gain as a function of
collector current; typical values
006aaa136
I
C
(mA)
10
- 1
10
3
10
2
1 10
1
10
V
BEsat
(V)
10
- 1
(1)
(2)
(3)
I
C
/I
B
= 10
(1) T
amb
= -55 °C
(2) T
amb
= 25 °C
(3) T
amb
= 150 °C
Figure 13. BC817-40: Base-emitter saturation voltage as
a function of collector current; typical values
006aaa139
10
- 1
10
- 2
1
V
CEsat
(V)
10
- 3
I
C
(mA)
10
- 1
10
3
10
2
1 10
(1)
(2)
(3)
I
C
/I
B
= 10
(1) T
amb
= 150 °C
(2) T
amb
= 25 °C
(3) T
amb
= -55 °C
Figure 14. BC817-40: Collector-emitter saturation
voltage as a function of collector current; typical values
V
CE
(V)
0 542 31
006aaa142
0.4
0.8
1.2
I
C
(A)
0
(7)
(8)
(9)
(10)
(1)(2)(3)(4)(5)(6)
T
amb
= 25 °C
(1) I
B
= 12.0 mA
(2) I
B
= 10.8 mA
(3) I
B
= 9.6 mA
(4) I
B
= 8.4 mA
(5) I
B
= 7.2 mA
(6) I
B
= 6.0 mA
(7) I
B
= 4.8 mA
(8) I
B
= 3.6 mA
(9) I
B
= 2.4 mA
(10) I
B
= 1.2 mA
Figure 15. BC817-40: Collector current as a function of
collector-emitter voltage; typical values
