Nexperia
BC817 series
45 V, 500 mA NPN general-purpose transistors
BC817_SER All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2018. All rights reserved.
Product data sheet Rev. 7 — 18 June 2018
4 / 15
T
amb
(°C)
-75 17512525 75-25
aaa-028120
200
100
300
400
P
tot
(mW)
0
(1)
(2)
(1) FR4 PCB, single-sided copper; 1 cm
2
(2) FR4 PCB, single-sided copper; standard footprint
Figure 1. Power derating curves
Nexperia
BC817 series
45 V, 500 mA NPN general-purpose transistors
BC817_SER All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2018. All rights reserved.
Product data sheet Rev. 7 — 18 June 2018
5 / 15
6 Thermal characteristics
Table 7. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
[1]
[2]
- - 500 K/WR
th(j-a)
thermal resistance from junction
to ambient
in free air
[3]
[2]
- - 362 K/W
[1] Device mounted on an FR4 Printed-Circuit-Board (PCB); single-sided copper; tin-plated and standard footprint.
[2] Valid for all available selection groups.
[3] Device mounted on an FR4 Printed-Circuit-Board (PCB); single-sided copper; tin-plated; mounting pad for collector 1 cm
2
.
aaa-028112
10
-5
1010
-2
10
-4
10
2
10
-1
t
p
(s)
10
-3
10
3
1
10
2
10
10
3
Z
th(j-a)
(K/W)
1
duty cycle = 1
0
0.01
0.02
0.05
0.10
0.20
0.33
0.50
0.75
FR4 PCB; single-sided copper; tin-plated and standard footprint
Figure 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
aaa-028113
10
-5
1010
-2
10
-4
10
2
10
-1
t
p
(s)
10
-3
10
3
1
10
2
10
10
3
Z
th(j-a)
(K/W)
1
duty cycle = 1
0.01
0.02
0.05
0.10
0.20
0.33
0.50
0.75
0
FR4 PCB; single-sided copper; tin-plated; mounting pad for collector 1 cm
2
Figure 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
Nexperia
BC817 series
45 V, 500 mA NPN general-purpose transistors
BC817_SER All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2018. All rights reserved.
Product data sheet Rev. 7 — 18 June 2018
6 / 15
7 Characteristics
Table 8. Characteristics
T
amb
= 25 °C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
V
(BR)CBO
collector-base
breakdown voltage
I
C
= 100 µA; I
E
= 0 A 50 - - V
V
(BR)CEO
collector-emitter
breakdown voltage
I
C
= 10 mA; I
B
= 0 A 45 - - V
V
(BR)EBO
emitter-base
breakdown voltage
I
E
= 100 µA; I
C
= 0 A 5 - - V
V
CB
= 20 V; I
E
= 0 A - - 100 nAI
CBO
collector-base
cut-off current
V
CB
= 20 V; I
E
= 0 A; T
j
= 150 °C - - 5 μA
I
EBO
emitter-base
cut-off current
V
EB
= 5 V; I
C
= 0 A - - 100 nA
DC current gain
BC817 V
CE
= 1 V; I
C
= 100 mA
[1]
100 - 600
BC817-16 V
CE
= 1 V; I
C
= 100 mA
[1]
100 - 250
BC817-25 V
CE
= 1 V; I
C
= 100 mA
[1]
160 - 400
h
FE
BC817-40 V
CE
= 1 V; I
C
= 100 mA
[1]
250 - 600
h
FE
DC current gain V
CE
= 1 V; I
C
= 500 mA
[1]
40 - -
V
CEsat
collector-emitter
saturation voltage
I
C
= 500 mA; I
B
= 50 mA
[1]
- - 700 mV
V
BE
base-emitter voltage V
CE
= 1 V; I
C
= 500 mA
[1]
[2]
- - 1.2 V
f
T
transition frequency V
CE
= 5 V; I
C
= 10 mA; f = 100 MHz 100 - - MHz
C
c
collector capacitance V
CB
= 10 V; I
E
= i
e
= 0 A; f = 1 MHz - 3 - pF
[1] pulsed; t
p
≤ 300 μs; δ ≤ 0.02
[2] V
BE
decreases by approxymately 2 mV/K with increasing temperature.

BC817-40,215

Mfr. #:
Manufacturer:
Nexperia
Description:
Bipolar Transistors - BJT NPN GP 500 45V
Lifecycle:
New from this manufacturer.
Delivery:
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