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BSP318SH6327XTSA1

P1-P3P4-P6P7-P9
2008-03-21
Page 7
BSP318S
Rev 2.3
Typ. capacitances
C = f(V
DS
)
parameter:
V
GS
=0 V,
f
=1 MHz
0 5 10 15 20 25 30
V
40
V
DS
1
10
2
10
3
10
pF
C
C
iss
C
oss
C
rss
Forward characteristics of reverse diode
I
F
=
f
(V
SD
)
parameter:
T
j
, t
p = 80 µs
0.0 0.4 0.8 1.2 1.6 2.0 2.4
V
3.0
V
SD
-1
10
0
10
1
10
2
10
A
BSP318S
I
F
T
j
= 25 °C typ
T
j
= 25 °C (98%)
T
j
= 150 °C typ
T
j
= 150 °C (98%)
Avalanche Energy
E
AS
=
f
(
T
j
)
parameter:
I
D
= 2.6 A,
V
DD
= 25 V
R
GS
= 25 Ω
20 40 60 80 100 120
°C
160
T
j
0
5
10
15
20
25
30
35
40
45
50
55
mJ
65
E
AS
Typ. gate charge
V
GS
=
f
(
Q
Gate
)
parameter:
I
D
= 2.6 A pulsed
0 4 8 12 16
nC
24
Q
Gate
0
2
4
6
8
10
12
V
16
BSP318S
V
GS
DS max
V
0,8
DS max
V
0,2
2008-03-21
Page 8
BSP318S
Rev 2.3
Drain-source breakdown voltage
V
(BR)DSS
= f
(
T
j
)
-60 -20 20 60 100
°C
180
T
j
54
56
58
60
62
64
66
68
V
72
BSP318S
V
(BR)DSS
2008-03-21
Page 9
BSP318S
Rev 2.3
P1-P3P4-P6P7-P9

BSP318SH6327XTSA1

Mfr. #:
Buy BSP318SH6327XTSA1
Manufacturer:
Infineon Technologies
Description:
MOSFET N-Ch 60V 2.6A SOT-223-3
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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