V
RRM
= 20 V - 100 V
I
F
= 120 A
Features
• High Surge Capability D-67 Package
• Types up to 100 V V
RRM
Parameter Symbol MBRH12020 (R) MBRH12030 (R) Unit
Repetitive peak reverse
MBRH12020 thru MBRH12040R
MBRH12040 (R)
MBRH12035 (R)
Maximum ratings, at T
j
= 25 °C, unless otherwise specified ("R" devices have leads reversed)
Silicon Power
Schottk
Diode
Conditions
voltage
RRM
RMS reverse voltage
V
RMS
14 21 V
DC blocking voltage
V
DC
20 30 V
Continuous forward current
I
F
120 120 A
Operating temperature
T
j
-40 to 175 -40 to 175 °C
Storage temperature
T
stg
-40 to 175 -40 to 175 °C
Parameter Symbol MBRH12020 (R) MBRH12030 (R) Unit
Diode forward voltage 0.65 0.65
44
250 250
Thermal characteristics
Thermal resistance, junction
- case
R
thJC
0.8 0.8 °C/W
250
A2000
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Surge non-repetitive forward
current, Half Sine Wave
I
F,SM
Reverse current
I
R
V
F
V
R
= 20 V, T
j
= 25 °C
I
F
= 120 A, T
j
= 25 °C
T
C
≤ 136 °C
Conditions
25
2000 2000
-40 to 175
120 120
2000
-40 to 175
MBRH12040 (R)
44
MBRH12035 (R)
0.8
V
R
= 20 V, T
j
= 125 °C
0.8
0.65 0.65
250
mA
V
-40 to 175 -40 to 175
T
C
= 25 °C, t
p
= 8.3 ms
28
4035
www.genesicsemi.com
1
