60
VTP Process Photodiodes VTP7840H
PRODUCT DESCRIPTION
Planar silicon photodiode in a transfer molded,
large lensed sidelooker package. The dark
package material filters out visible light but
passes infrared. These diodes exhibit low dark
current under reverse bias and fast speed of
response.
PACKAGE DIMENSIONS inch (mm)
CASE 51 LENSED SIDELOOKER
CHIP ACTIVE AREA: .0082 in
2
(5.27 mm
2
)
ABSOLUTE MAXIMUM RATINGS
Storage Temperature: -40°C to 85°C
Operating Temperature: -40°C to 85°C
ELECTRO-OPTICAL CHARACTERISTICS @ 25°C (See also VTP curves, pages 45-46)
SYMBOL CHARACTERISTIC TEST CONDITIONS
VTP7840H
UNITS
Min. Typ. Max.
I
SC
Short Circuit Current H = 100 fc, 2850 K 50 70 µA
TC I
SC
I
SC
Temperature Coefficient 2850 K .20 %/°C
V
OC
Open Circuit Voltage H = 100 fc, 2850 K 325 mV
TC V
OC
V
OC
Temperature Coefficient 2850 K -2.0
I
D
Dark Current H = 0, VR = 10 V 20 nA
R
SH
Shunt Resistance H = 0, V = 10 mV 0.25 GΩ
C
J
Junction Capacitance H = 0, V = 3 V 40 pF
S
R
Sensitivity @ Peak .55 A/W
λ
range
Spectral Application Range 725 1150 nm
λ
p
Spectral Response - Peak 925 nm
V
BR
Forward Voltage @ 10 mA 1.0 V
θ
1/2
Angular Resp. - 50% Resp. Pt. ±48 Degrees
NEP Noise Equivalent Power 5.3 x 10
-14
(Typ.)
D* Specific Detectivity 5.1 x 10
12
(Typ.)
WHz⁄
cm Hz W⁄
Excelitas Technologies, 22001 Dumberry, Vaudreuil, QC, Canada J7V 8P7 Phone: 877-734-6786 Fax: 450-424-3413 www.excelitas.com
