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MMBD2835LT1G

P1-P3P4-P4
© Semiconductor Components Industries, LLC, 1994
October, 2016 − Rev. 7
1 Publication Order Number:
MMBD2835LT1/D
MMBD2835LT1G,
MMBD2836LT1G,
SMMBD2835LT1G
Monolithic Dual Switching
Diodes
Features
• S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (EACH DIODE)
Rating Symbol Value Unit
Reverse Voltage
MMBD2835LT1G, SMMBD2835LT1G
MMBD2836LT1G
V
R
35
75
Vdc
Forward Current I
F
100 mAdc
THERMAL CHARACTERISTICS
Total Device Dissipation FR−5 Board
(Note 1)
T
A
= 25°C
Derate above 25°C
P
D
225
1.8
mW
mW/°C
Thermal Resistance, Junction−to−Ambient
R
q
JA
556 °C/W
Total Device Dissipation Alumina
Substrate, (Note 2)
T
A
= 25°C
Derate above 25°C
P
D
300
2.4
mW
mW/°C
Thermal Resistance, Junction−to−Ambient
R
q
JA
417 °C/W
Junction and Storage Temperature T
J
, T
stg
−55 to
+150
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR−5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
xxx = Specific Device Code
M = Date Code
G = Pb−Free Package
(Note: Microdot may be in either location)
MARKING DIAGRAM
A3X = MMBD2835LT1G
SMMBD2835LT1G
A2X = MMBD2836LT1G
xxx MG
G
SOT−23 (TO−236AB)
CASE 318−08
STYLE 12
ANODE
3
CATHODE
1
2
CATHODE
1
Device Package Shipping
†
ORDERING INFORMATION
MMBD2835LT1G SOT−23
(Pb−Free)
3,000 /
Tape & Reel
SMMBD2835LT1G SOT−23
(Pb−Free)
3,000 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
s
Brochure, BRD8011/D.
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
MMBD2836LT1G SOT−23
(Pb−Free)
3,000 /
Tape & Reel
www.onsemi.com
MMBD2835LT1G, MMBD2836LT1G, SMMBD2835LT1G
www.onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted) (EACH DIODE)
Characteristic
Symbol Min Max Unit
OFF CHARACTERISTICS
Reverse Breakdown Voltage (I
R
= 100 mAdc)
MMBD2835LT1G, SMMBD2835LT1G
MMBD2836LT1G
V
(BR)
35
75
−
−
Vdc
Reverse Voltage Leakage Current (Note 3)
(V
R
= 30 Vdc)
MMBD2835LT1G, SMMBD2835LT1G
(V
R
= 50 Vdc)
MMBD2836LT1G
I
R
−
−
100
100
nAdc
Diode Capacitance (V
R
= 0 V, f = 1.0 MHz) C
T
− 4.0 pF
Forward Voltage
(I
F
= 10 mAdc)
(I
F
= 50 mAdc)
(I
F
= 100 mAdc)
V
F
−
−
−
1.0
1.0
1.2
Vdc
Reverse Recovery Time (I
F
= I
R
= 10 mAdc, I
R(REC)
= 1.0 mAdc) (Figure 1) t
rr
− 4.0 ns
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. For each individual diode while the second diode is unbiased.
Notes: 1. A 2.0 kW variable resistor adjusted for a Forward Current (I
F
) of 10 mA.
Notes: 2. Input pulse is adjusted so I
R(peak)
is equal to 10 mA.
Notes: 3. t
p
» t
rr
+10 V
2.0 k
820 W
0.1 mF
DUT
V
R
100 mH
0.1 mF
50 W OUTPUT
PULSE
GENERATOR
50 W INPUT
SAMPLING
OSCILLOSCOPE
t
r
t
p
t
10%
90%
I
F
I
R
t
rr
t
i
R(REC)
= 1.0 mA
OUTPUT PULSE
(I
F
= I
R
= 10 mA; MEASURED
at i
R(REC)
= 1.0 mA)
I
F
INPUT SIGNAL
Figure 1. Recovery Time Equivalent Test Circuit
MMBD2835LT1G, MMBD2836LT1G, SMMBD2835LT1G
www.onsemi.com
3
CURVES APPLICABLE TO EACH CATHODE
Figure 2. Forward Voltage
V
F
, FORWARD VOLTAGE (VOLTS)
1.0
10
100
0.1
Figure 3. Leakage Current
V
R
, REVERSE VOLTAGE (VOLTS)
10
0
I
1.0
0.1
0.001
0.01
10 20 30 40 50
I
1.0 1.20.2 0.4 0.6 0.8
Figure 4. Capacitance
V
R
, REVERSE VOLTAGE (VOLTS)
0
C
1.75
1.50
1.25
0.75
1.00
2.0 4.0 6.0 8.0
, FORWARD CURRENT (mA)
F
T
A
= 85°C
T
A
= -40°C
T
A
= 25°C
, REVERSE CURRENT ( A)
R
m
, DIODE CAPACITANCE (pF)
D
T
A
= 25°C
T
A
= 55°C
T
A
= 85°C
T
A
= 150°C
T
A
= 125°C
P1-P3P4-P4

MMBD2835LT1G

Mfr. #:
Buy MMBD2835LT1G
Manufacturer:
ON Semiconductor
Description:
Diodes - General Purpose, Power, Switching 35V 200mA
Lifecycle:
New from this manufacturer.
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