RB520S-30
Taiwan Semiconductor
1
Version: C1804
200mA, 30V Low VF SMD Schottky Barrier Diode
FEATURES
● Low capacitance
● Low forward voltage drop
● Moisture sensitivity level: level 1, per J-STD-020
● Compliant to RoHS directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
● Halogen-free according to IEC 61249-2-21
APPLICATIONS
● Adapters
● For switching power supply
● Low stored charge
● Inverter
MECHANICAL DATA
● Case: SOD-523F
● Molding compound meets UL 94 V-0 flammability rating
● Terminal: Matte tin plated leads, solderable per J-STD-002
● Meet JESD 201 class 1A whisker test
● Polarity: Indicated by cathode band
● Weight: 1.68 ± 0.5 mg
PARAMETER VALUE UNIT
I
F
200 mA
V
RRM
30 V
I
FSM
1 A
V
F
at I
F
=200mA 0.6 V
T
J
Max. 125 °C
Package SOD-523F
Configuration Single die
(T
A
= 25°C unless otherwise noted)
Marking code on the device
B
Power dissipation
P
D
200 mW
Repetitive peak reverse voltage
V
RRM
30 V
Forward current I
F
200 mA
Non-repetitive peak forward surge current @ t = 8.3ms I
FSM
1 A
Junction temperature range T
J
-55 to +125 °C
Storage temperature range T
STG
-55 to +125 °C
Junction-to-ambient thermal resistance R
ӨJA
500 °C/W
