SIT8103AI-12-18E-100.00000X

SiTime Corporation 990 Almanor Avenue Sunnyvale, CA 94085 (408) 328-4400 www.sitime.com
Rev. 1.46 Revised August 11, 2011
SiT8103
High Performance 1-110 MHz Oscillator
Note:
1. All electrical specifications in the above table are measured with 15pF output load, unless stated otherwise in the Condition. For more information about SoftEdge
TM
rise/fall time for driving higher output load or reducing EMI, download http://www.sitime.com/support2/documents/AN10022-rise-and-fall-time-rev1.1.pdf.
MEMS oscillator with LVCMOS/LVTTL compatible output
1-110 MHz frequency range
Frequency stability as low as ±20 PPM
Typical current consumption of 6.1 mA in active mode
Standby or output enable modes
1.8V, 2.5V - 3.3V supply voltage
SoftEdge
TM
configurable rise/fall time for driving higher loads or EMI reduction.
Four industry-standard packages: 2.5 x 2.0, 3.2 x 2.5, 5.0 x 3.2, 7.0 x 5.0 mm
All-silicon device with outstanding reliability of 2 FIT, 10x improvement over quartz-based devices
Ultra short lead time
Ideal for consumer electronics: video, set top boxes, HDTV, DVR, scanners, printers, IP camera, etc.
Ideal for high-speed serial protocols: Ethernet, USB, SATA, SAS, Fibre Channel, Firewire, PCI Express
Electrical Characteristics
[1]
Parameter Symbol Min. Typ. Max. Unit Condition
Output Frequency Range f 1 110 MHz
Frequency Stability F_stab -20 +20 PPM Inclusive of: Initial stability, operating temperature, rated power,
supply voltage change, load change, shock and vibration.
± 20 PPM available in extended commercial
temperature only
-25 +25 PPM
-30 +30 PPM
-50 +50 PPM
Aging Ag -1.0 1.0 PPM 1st year at 25°C
Operating Temperature Range T_use -20 +70 °C Extended Commercial
-40 +85 °C Industrial
Supply Voltage Vdd 1.71 1.8 1.89 V Any voltage between 2.5V and 3.3V is supported with 1 decimal
point resolution.
2.25 2.5 2.75 V
2.52 2.8 3.08 V
2.97 3.3 3.63 V
Current Consumption Idd 6.7 7.5 mA No load condition, f = 20 MHz, Vdd = 2.5 V, 2.8 V or 3.3 V
6.1 6.7 mA No load condition, f = 20 MHz, Vdd = 1.8 V
Standby Current I_std 2.4 4.3 μAST = GND, Vdd = 3.3 V, Output is Weakly Pulled Down
–1.22.2μAST
= GND, Vdd = 2.5 or 2.8 V, Output is Weakly Pulled Down
–0.40.8μAST
= GND, Vdd = 1.8 V, Output is Weakly Pulled Down
Duty Cycle DC 45 50 55 % All Vdds. f <= 75 MHz
40 50 60 % All Vdds. f > 75 MHz
Rise/Fall Time Tr, Tf 1 2 ns 15pF load, 20% - 80% Vdd=2.5V, 2.8V or 3.3V
1.3 2.5 ns 15pF load, 20% - 80% Vdd=1.8V
1.9 2.6 ns 30pF load, 20% - 80% Vdd=2.5V, 2.8V or 3.3V
2.3 3.3 ns 30pF load, 20% - 80% Vdd=1.8V
2.9 3.9 ns 45pF load, 20% - 80% Vdd=2.5V, 2.8V or 3.3V
3.4 4.6 ns 45pF load, 20% - 80% Vdd=1.8V
Output Voltage High VOH 90% Vdd IOH = -4 mA (Vdd = 3.3 V)
IOH = -3 mA (Vdd = 2.8 V and Vdd = 2.5 V)
IOH = -2 mA (Vdd = 1.8 V)
Output Voltage Low VOL 10% Vdd
Input Voltage High VIH 70% Vdd Pin 1, OE or ST
Input Voltage Low VIL 30% Vdd Pin 1, OE or ST
Startup Time T_start 10 ms Measured from the time Vdd reaches its rated minimum value
Resume Time T_resume 3.0 4 ms Measured from the time ST pin crosses 50% threshold
RMS Period Jitter T_jitt 4.0 ps f = 75 MHz, Vdd = 2.5 V, 2.8 V or 3.3 V
6.5 ps f = 75 MHz, Vdd = 1.8 V
RMS Phase Jitter (random) T_phj 0.6 ps f = 75 MHz @ BW: 900 kHz to 7.5 MHz, VDD = 2.5 V to 3.3 V
0.8 ps f = 75 MHz @ BW: 900 kHz to 7.5 MHz, VDD = 1.8 V
Features, Benefits and Applications
Specifications
SiT8103
High Performance 1-110 MHz Oscillator
Rev. 1.46 Page 2 of 4 www.sitime.com
Pin Description Tables
Absolute Maximum Table
Attempted operation outside the absolute maximum ratings of the part may cause permanent damage to the part. Actual performance of the IC
is only guaranteed within the operational specifications, not at absolute maximum ratings.
Startup and Resume Timing Diagram
Note:
2. In 1.8 V mode, a resistor of <100 k between OE pin and VDD is required.
Pin #1 Functionality Pin Map
OE Pin Connection
H or Open
[2]
: specified frequency output 1 OE/ST
L: output is high impedance 2GND
ST
3CLK
H or Open: specified frequency output 4 VDD
L: output is low level (weak pull down). Oscillation stops
Parameter Min. Max. Unit
Storage Temperature -65 150 °C
VDD -0.5 4 V
Electrostatic Discharge 6000 V
Theta JA (with copper plane on VDD and GND) 75 °C/W
Theta JC (with PCB traces of 0.010 inch to all pins) 24 °C/W
Soldering Temperature (follow standard Pb free soldering guidelines) 260 °C
Number of Program Writes 1 NA
Program Retention over -40 to 125°C, Process, VDD (0 to 3.65 V) 1,000+ years
Environmental Compliance
Parameter Condition/Test Method
Mechanical Shock MIL-STD-883F, Method 2002
Mechanical Vibration MIL-STD-883F, Method 2007
Temperature Cycle JESD22, Method A104
Solderability MIL-STD-883F, Method 2003
Moisture Sensitivity Level MSL1 @ 260°C
50% Vdd
Vdd
ST Voltage
CLK Output
T_resume
T_resume: Time to resume from ST
90% Vdd: 2.5/2.8/3.3 V parts
95% Vdd: 1.8 V parts
Vdd
Pin 4 Voltage
CLK Output
T_start
T_start: Time to start from power-off
(ST/OE Mode)
(ST Mode Only)
Dimensions and Land Patterns
SiT8103
High Performance 1-110 MHz Oscillator
Rev. 1.46 Page 3 of 4 www.sitime.com
Notes:
3. Top marking: Y denotes manufacturing origin and XXXX denotes manufacturing lot number. The value of “Y” will depend on the assembly location of the device
4. A capacitor of value 0.1
μF between Vdd and GND is recommended.
5. The 7050 package with part number designation "-8" has NO center pad.
Package Size – Dimensions (Unit: mm)
[]
Recommended Land Pattern (Unit: mm)
[5]
2.5 x 2.0 x 0.75 mm
3.2 x 2.5 x 0.75 mm
5.0 x 3.2 x 0.75 mm
7.0 x 5.0 x 0.90 mm
2.5 ± 0.10
2.0 ± 0.10
1.1
1.00
0.75
0.5
0.75 ± 0.05
YXXXX
#1
#2
#4#3
#2
#1
#3#4
1.9
1.1
1.0
1.5
3.2 ± 0.15
2.5 ± 0.15
2.1
0.9
0.7
0.9
0.75 ± 0.05
#1
#2
#4#3
#2
#1
#3#4
YXXXX
5.0 ± 0.15
3.2 ± 0.15
2.39
0.8
1.15
1.1
0.75 ± 0.05
#1
#2
#4#3
#2
#1
#3#4
YXXXX
2.54
1.5
1.6
2.2
5.0 ± 0.15
1.4
1.1
5.08
7.0 ± 0.15
2.6
1.7
2.1
0.90 ± 0.10
YXXXX
#1
#2
#4#3
#2
#1
#3#4
No Connect
[5]
5.08
3.81
2.2
2.0

SIT8103AI-12-18E-100.00000X

Mfr. #:
Manufacturer:
Description:
Programmable Oscillators 100MHz +/-25ppm 1.8Volt -40C + 85C
Lifecycle:
New from this manufacturer.
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