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VRF151G

P1-P3P4-P4
VRF151G
50V, 300W, 175MHz
The VRF151G is designed for broadband commercial and military applications
at frequencies to 175MHz. The high power, high gain, and broadband perfor-
mance of this device make possible solid state transmitters for FM broadcast
or TV channel frequency bands.
FEATURES
• Improved Ruggedness V
(BR)DSS
= 170V
• 300W with 16dB Typical Gain @ 175MHz, 50V
• Excellent Stability & Low IMD
• Common Source Confi guration
• RoHS Compliant
• 5:1 Load VSWR Capability at Specifi ed Operating Conditions
• Nitride Passivated
• Refractory Gold Metallization
• High Voltage Replacement for MRF151G
Symbol Parameter VRF151G Unit
V
DSS
Drain-Source Voltage 170 V
I
D
Continuous Drain Current @ T
C
= 25°C 36 A
V
GS
Gate-Source Voltage ±40 V
P
D
Total Device dissipation @ T
C
= 25°C 500 W
T
STG
Storage Temperature Range -65 to 150
°C
T
J
Operating Junction Temperature 200
RF POWER VERTICAL MOSFET
Maximum Ratings All Ratings: T
C
=25°C unless otherwise specifi ed
Static Electrical Characteristics
Symbol Parameter Min Typ Max Unit
V
(BR)DSS
Drain-Source Breakdown Voltage (V
GS
= 0V, I
D
= 100mA) 170 180
V
V
DS(ON)
On State Drain Voltage (I
D(ON)
= 10A, V
GS
= 10V) 2.0 3.0
I
DSS
Zero Gate Voltage Drain Current (V
DS
= 100V, V
GS
= 0V) 1.0 mA
I
GSS
Gate-Source Leakage Current (V
DS
= ±20V, V
DS
= 0V) 1.0 A
g
fs
Forward Transconductance (V
DS
= 10V, I
D
= 10A) 5.0 mhos
V
GS(TH)
Gate Threshold Voltage (V
DS
= 10V, I
D
= 100mA) 2.9 3.6 4.4 V
Microsemi Website - http://www.microsemi.com
050-4938 Rev G 11-2009
Thermal Characteristics
Symbol Characteristic Min Typ Max Unit
R
JC
Junction to Case Thermal Resistance 0.35 °C/W
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
0
5
10
15
20
25
30
0 2 4 6 8 10 12
0
5
10
15
20
25
0 5 10 15 20 25
VRF151G
Dynamic Characteristics
Symbol Parameter Test Conditions Min Typ Max Unit
C
ISS
Input Capacitance V
GS
= 0V 375
pF
C
oss
Output Capacitance V
DS
= 50V 200
C
rss
Reverse Transfer Capacitance f = 1MHz 12
Functional Characteristics
Symbol Parameter Min Typ Max Unit
G
PS
f = 175MHz,- V
DD
= 50V, I
DQ
= 500mA, P
out
= 300W 14 16 dB
D
f = 175MHz, V
DD
= 50V, I
DQ
= 500mA, P
out
= 300W 50 55 %
f = 175MHz, V
DD
= 50V, I
DQ
= 500mA, P
out
= 300W
5:1VSWR - All Phase Angles No Degradation in Output Power
1. To MIL-STD-1311 Version A, test method 2204B, Two Tone, Reference Each Tone
Microsemi reserves the right to change, without notice, the specifi cations and information contained herein.
050-4938 Rev G 11-2009
1
10
100
1 10 100 250
1.0E11
1.0E10
1.0E9
0 10 20 30 40 50 60
C
iss
V
DS(ON
)
, DRAIN-TO-SOURCE VOLTAGE (V)
FIGURE 1, Output Characteristics
I
D
, DRAIN CURRENT (A)
I
D
, DRAIN CURRENT (A)
T
J
= 125°C
V
DS
, DRAIN-TO-SOURCE VOLTAGE (V)
FIGURE 3, Capacitance vs Drain-to-Source Voltage
C, CAPACITANCE (F)
V
DS
, DRAIN-TO-SOURCE VOLTAGE (V)
FIGURE 4, Forward Safe Operating Area
I
D
, DRAIN CURRENT (A)
5V
6V
7V
8V
9V
10V
14V
V
GS
, GATE-TO-SOURCE VOLTAGE (V)
FIGURE 2, Transfer Characteristics
250s PULSE
TEST<0.5 % DUTY
CYCLE
T
J
= -55°C
T
J
= 25°C
C
oss
C
rss
R
ds(on)
PD Max
T
J
= 125°C
T
C
= 75°C
Typical Performance Curves
I
DMax
V
GS
= 4V
0
0.05
0.10
0.15
0.20
0.25
0.30
0.35
0.40
10
-5
10
-4
10
-3
10
-2
10 1.0
-1
050-4938 Rev G 11-2009
0.5
SINGLE PULSE
0.1
0.3
0.7
0.05
D = 0.9
Peak T
J
= P
DM
x Z
θJC
+
T
C
Duty Factor D =
t
1
/
t
2
t
2
t
1
P
DM
Note:
t
1
= Pulse Duration
Z
JC
, THERMAL IMPEDANCE (°C/W)
RECTANGULAR PULSE DURATION (seconds)
Figure 5. Maximum Effective Transient Thermal Impedance Junction-to-Case vs Pulse Duration
0
50
100
150
200
250
300
350
400
0 2 4 6 8 10
OUTPUT POWER (W
PEP
)
INPUT POWER (WATTS PEP)
Figure 6. P
OUT
versus P
IN
Typical Performance Curves
Vdd=50V, Idq = 250mA,
Freq=150MHz
150MHz
VRF151G
175MHz
200MHz
P1-P3P4-P4

VRF151G

Mfr. #:
Buy VRF151G
Manufacturer:
Microchip / Microsemi
Description:
RF MOSFET Transistors FG, MOSFET, ARF, RoHS, M208
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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