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VS-10ETF12FP-M3

P1-P3P4-P6P7-P8
VS-10ETF10FP-M3, VS-10ETF12FP-M3
www.vishay.com
Vishay Semiconductors
Revision: 15-Sep-17
1
Document Number: 96294
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fast Soft Recovery Rectifier Diode, 10 A
FEATURES
• Glass passivated pellet chip junction
• 150 °C max. operation junction temperature
• Designed and qualified according to
JEDEC
®
-JESD 47
• Fully isolated package (V
INS
= 2500 V
RMS
)
• UL pending
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
These devices are intended for use in output rectification
and freewheeling in inverters, choppers and converters as
well as in input rectification where severe restrictions on
conducted EMI should be met.
DESCRIPTION
The VS-10ETF1..FP... fast soft recovery rectifier series has
been optimized for combined short reverse recovery time
and low forward voltage drop.
The glass passivation ensures stable reliable operation in
the most severe temperature and power cycling conditions.
PRIMARY CHARACTERISTICS
I
F(AV)
10 A
V
R
1000 V, 1200 V
V
F
at I
F
1.33 V
I
FSM
140 A
t
rr
80 ns
T
J
max. 150 °C
Snap factor 0.6
Package 2L TO-220 FullPAK
Circuit configuration Single
2
Anode
1
Cathode
2L TO-220 FullPAK
2
1
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
V
RRM
1000, 1200 V
I
F(AV)
Sinusoidal waveform 10
A
I
FSM
140
t
rr
1 A, 100 A/µs 80 ns
V
F
10 A, T
J
= 25 °C 1.33 V
T
J
-40 to +150 °C
VOLTAGE RATINGS
PART NUMBER
V
RRM
, MAXIMUM PEAK
REVERSE VOLTAGE
V
V
RSM
, MAXIMUM
NON-REPETITIVE PEAK
REVERSE VOLTAGE
V
I
RRM
AT 150 °C
mA
VS-10ETF10FP-M3 1000 1100
4
VS-10ETF12FP-M3 1200 1300
VS-10ETF10FP-M3, VS-10ETF12FP-M3
www.vishay.com
Vishay Semiconductors
Revision: 15-Sep-17
2
Document Number: 96294
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current I
F(AV)
T
C
= 95 °C, 180° conduction half sine wave 10
A
Maximum peak one cycle
non-repetitive surge current
I
FSM
10 ms sine pulse, rated V
RRM
applied 115
10 ms sine pulse, no voltage reapplied 140
Maximum I
2
t for fusing I
2
t
10 ms sine pulse, rated V
RRM
applied 66
A
2
s
10 ms sine pulse, no voltage reapplied 94
Maximum I
2
t for fusing I
2
t t = 0.1 to 10 ms, no voltage reapplied 940 A
2
s
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum forward voltage drop V
FM
10 A, T
J
= 25 °C 1.33 V
Forward slope resistance r
t
T
J
= 150 °C
22.9 m
Threshold voltage V
F(TO)
0.96 V
Maximum reverse leakage current I
RM
T
J
= 25 °C
V
R
= Rated V
RRM
0.1
mA
T
J
= 150 °C 4
RECOVERY CHARACTERISTICS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Reverse recovery time t
rr
I
F
at 10 A
pk
25 A/μs
25 °C
310 ns
Reverse recovery current I
rr
4.7 A
Reverse recovery charge Q
rr
1.05 μC
Snap factor S0.6
I
FM
t
rr
dir
dt
I
RM(REC)
Q
rr
t
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and storage
temperature range
T
J
, T
Stg
-40 to +150 °C
Maximum thermal resistance
junction to case
R
thJC
DC operation 2.5
°C/W
Maximum thermal resistance
junction to ambient
R
thJA
62
Typical thermal resistance,
case to heatsink
R
thCS
Mounting surface, smooth, and greased 0.5
Approximate weight
2g
0.07 oz.
Mounting torque
minimum 6 (5)
kgf · cm
(lbf · in)
maximum 12 (10)
Marking device Case style 2L TO-220 FullPAK
10ETF10FP
10ETF12FP
VS-10ETF10FP-M3, VS-10ETF12FP-M3
www.vishay.com
Vishay Semiconductors
Revision: 15-Sep-17
3
Document Number: 96294
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Current Rating Characteristics
Fig. 2 - Current Rating Characteristics
Fig. 3 - Forward Power Loss Characteristics
Fig. 4 - Forward Power Loss Characteristics
Fig. 5 - Maximum Non-Repetitive Surge Current
Fig. 6 - Maximum Non-Repetitive Surge Current
140
150
70
0 2 4 6 8 10 12
Maximum Allowable Case Temperature (°C)
Average Forward Current (A)
130
120
110
100
90
80
30°
60°
90°
180°
120°
R
thJC
(DC) = 2.5 °C/W
Conduction angle
Ø
0246810 18
Maximum Allowable Case Temperature (°C)
Average Forward Current (A)
12 14
R
thJC
(DC) = 2.5 °C/W
Ø
Conduction period
30°
60°
90°
180°
120°
DC
140
150
70
130
120
110
100
90
80
16
0246810
Maximum Average Forward Power Loss (W)
Average Forward Current (A)
16
0
12
10
8
6
4
2
14
30°
60°
90°
180°
120°
RMS limit
T
J
= 150 °C
Conduction angle
Ø
02468 16
Maximum Average Forward Power Loss (W)
Average Forward Current (A)
24
0
16
12
8
4
20
10 12 14
T
J
= 150 °C
DC
30°
60°
90°
180°
120°
RMS limit
Ø
Conduction period
Peak Half Sine Wave Forward Current (A)
Number of Equal Amplitude Half Cycle
Current Pulses (N)
1 10 100
30
40
50
60
70
80
90
100
110
120
130
At any rated load condition and with
rated V
RRM
applied following surge.
Initial Tj = 150 °C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
Peak Half Sine Wave Forward Current (A)
Pulse Train Duration (s)
0.01 0.1 1 10
0
20
40
60
80
100
120
140
Maximum non-repetitive surge current
vs. pulse train duration.
Initial T
J
= T
J
max.
No voltage reapplied
Rated V
RRM
reapplied
P1-P3P4-P6P7-P8

VS-10ETF12FP-M3

Mfr. #:
Buy VS-10ETF12FP-M3
Manufacturer:
Vishay Semiconductors
Description:
Schottky Diodes & Rectifiers New Input Diodes - FULLPAK-220-e3
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
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