OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

HMC-ALH444

P1-P3P4-P6
AMPLIFIERS - LOW NOISE - CHIP
1
1 - 186
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
GaAs HEMT MMIC LOW NOISE
AMPLIFIER, 1 - 12 GHz
v03.0410
General Description
Features
Functional Diagram
Noise Figure: 1.75 dB @ 10 GHz
Gain: 17 dB
P1dB Output Power: +19 dBm @ 5 GHz
Supply Voltage: +5V @ 55 mA
Die Size: 2.64 x 1.64 x 0.1 mm
Electrical Speci cations*, T
A
= +25° C, Vdd= +5V
Typical Applications
This HMC-ALH444 is ideal for:
• Wideband Communication Systems
• Surveillance Systems
• Point-to-Point Radios
• Point-to-Multi-Point Radios
• Military & Space
• Test Instrumentation
* VSAT
The HMC-ALH444 is a GaAs MMIC HEMT Low Noise
Wideband Ampli er die which operates between 1
and 12 GHz. The ampli er provides 17 dB of gain, 1.5
dB noise  gure and +19 dBm of output power at 1 dB
gain compression while requiring only 55 mA from a
+5V supply voltage.
HMC-ALH444
Parameter Min. Typ. Max. Units
Frequency Range 1 - 12 GHz
Gain 15 17 dB
Gain Variation over Temperature 0.02 dB / °C
Noise Figure 1.5 2 dB
Input Return Loss 10 dB
Output Return Loss 14 dB
Output IP3 28 dBm
Output Power for 1 dB Compression 19 dBm
Supply Current (Idd)
(Vdd = 5V, Vgg1 = -0.5V Typ., Vgg2 = 1.5V Typ)
55 mA
*Unless otherwise indicated, all measurements are from probed die
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
For price, delivery, and to place orders: Analog Devices, Inc.,
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
AMPLIFIERS - LOW NOISE - CHIP
1
1 - 187
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
HMC-ALH444
v03.0410
GaAs HEMT MMIC LOW NOISE
AMPLIFIER, 1 - 12 GHz
Noise Figure vs. Frequency
Output Return Loss vs. Frequency
Linear Gain vs. Frequency
Input Return Loss vs. Frequency
0
2
4
6
8
10
12
14
16
18
20
02468101214
GAIN (dB)
FREQUENCY (GHz)
-20
-15
-10
-5
0
02468101214
RETURN LOSS (dB)
FREQUENCY (GHz)
0
0.5
1
1.5
2
2.5
02468101214
NOISE FIGURE (dB)
FREQUENCY (GHz)
-40
-35
-30
-25
-20
-15
-10
-5
0
02468101214
RETURN LOSS (dB)
FREQUENCY (GHz)
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
For price, delivery, and to place orders: Analog Devices, Inc.,
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
AMPLIFIERS - LOW NOISE - CHIP
1
1 - 188
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
HMC-ALH444
v03.0410
GaAs HEMT MMIC LOW NOISE
AMPLIFIER, 1 - 12 GHz
Outline Drawing
Absolute Maximum Ratings
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
NOTES:
1. ALL DIMENSIONS ARE IN INCHES [MM].
2. TYPICAL BOND PAD IS .004” SQUARE.
3. BACKSIDE METALLIZATION: GOLD.
4. BACKSIDE METAL IS GROUND.
5. BOND PAD METALLIZATION: GOLD.
6. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS.
7. OVERALL DIE SIZE
±
.002”
Drain Bias Voltage +5.5 Vdc
RF Input Power 12 dBm
Gate Bias Voltage Vgg1 -1 to 0.3 Vdc
Gate Bias Voltage Vgg2 0 to 2.5 Vdc
Thermal Resistance
(channel to die bottom)
109 °C/W
Channel Temperature 180 °C
Storage Temperature -65 to +150 °C
Operating Temperature -55 to +85 °C
Die Packaging Information
[1]
Standard Alternate
GP-1 (Gel Pack) [2]
[1] Refer to the “Packaging Information” section for die
packaging dimensions.
[2] For alternate packaging information contact Hittite
Microwave Corporation.
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
For price, delivery, and to place orders: Analog Devices, Inc.,
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
P1-P3P4-P6

HMC-ALH444

Mfr. #:
Buy HMC-ALH444
Manufacturer:
Analog Devices / Hittite
Description:
RF Amplifier GaAs HEMT WBand lo Noise amp, 1 - 12 GHz
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet