2SB1710TL

2SB1710

Transistors

1/2

General purpose amplification (−30V, −1A)

2SB1710

zApplication

Low frequency amplifier

Driver

zFeatures

1) A collector current is large.

2) Collector saturation voltage is low.

V

CE(sat) ≤ −350mV

at Ic = −500mA / I

B = −25mA

zExternal dimensions (Units : mm)

ROHM :TSMT3

(1) Base

(2) Emitter

(3) Collector

1.6

2.8

0.4

0.16

0~0.1

0.3∼0.6

(

3

)

0.85

0.7

0.95

(1)

2.9

1.9

(2)

0.95

Each lead has same dimensions

Abbreviated symbol : EW

1.0MAX

zAbsolute maximum ratings (Ta=25°C)

Parameter Symbol

V

CBO

V

CEO

V

EBO

I

C

I

CP

P

C

Tj

Tstg

Limits

−30

−30

−6

−1

500

150

−55~+150

−2

∗1

Unit

V

V

V

A

A

mW

°C

°C

∗2

∗1

∗2

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Power dissipation

Junction temperature

Range of storage temperature

Single pulse, P

W

=1ms

Each Terminal Mounted on a Recommended

zPackaging specifications

2SB1710

TL

3000

Type

Package

Code

Basic ordering unit (pieces)

Taping

zElectrical characteristics (Ta=25°C)

Parameter Symbol Min. Typ. Max. Unit Conditions

V

CB

=−10V, I

E

=0A, f=1MHz

f

T

−

320

−

MHz

V

CE

=−2V, I

E

=100mA, f=100MHz

BV

CBO

−30

−−

V

I

C

=−10µA

BV

CEO

−30

−−

V

I

C

=−1mA

BV

EBO

−6

−−

V

I

E

=−10µA

I

CBO

−−

−100

nA V

CB

=−30V

I

EBO

−−

−100

nA V

EB

=−6V

V

CE(sat)

−−150

−350 mV

I

C

=−500mA, I

B

=−25mA

h

FE

270 − 680

− V

CE

=−2V, I

C

=−100mA

Cob − 7 −

pF

∗

∗

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cutoff current

Emitter cutoff current

Collector-emitter saturation voltage

DC current gain

Transition frequency

Corrector output capacitance

∗ Pulsed

2SB1710

Transistors

2/2

zElectrical characteristic curves

0.001 0.01 0.1 1 10

COLLECTOR CURRENT : I

C

(A)

10

DC CURRENT GAIN : h

FE

1000

100

Ta=100°C

Ta=−40°C

Ta=25°C

V

CE

=−2V

Pulsed

Fig.1 DC current gain

vs. collector current

0.1

0.01

10

1

0.001 0.01 0.1 1

COLLECTOR CURRENT : I

C

(A)

BASE SATURATION VOLTAGE : V

BE (sat)

(V)

COLLECTOR SATURATION VOLTAGE : V

CE (sat)

(V)

Ta=25°C

Ta=25°C

Ta=−40°C

Ta=−40°C

Ta=100°C

Ta=100°C

V

BE(sat)

V

CE(sat)

I

C

/I

B

=20/1

Pulsed

Fig.2 Collector-emitter saturation voltage

base-emitter saturation voltage

vs. collector current

0.001 0.01 0.1 1

COLLECTOR CURRENT : I

C

(A)

0.001

0.01

COLLECTOR SATURATION VOLTAGE : V

CE(sat)

(V)

0.1

1

10

Ta=25°C

Pulsed

I

C

/I

B

=10/1

I

C

/I

B

=20/1

I

C

/I

B

=50/1

Fig.3 Collector-emitter saturation voltage

vs. collector current

0 0.5 1 1.5

BASE TO EMITTER CURRENT : V

BE

(V)

0.001

COLLECTOR CURRENT : I

C

(A)

0.01

1

0.1

VCE=−2V

Pulsed

Ta=100°C

Ta=25°C

Ta=−40°C

Fig.4 Grounded emitter propagation

characteristics

0.01 0.1 1

EMITTER CURRENT : I

E

(A)

10

TRANSITION FREQUENCY : f

T

(MHz)

1000

100

Ta=25°C

V

CE

=−2V

f=100MHz

Fig.5 Gain bandwidth product

vs. emitter current

0.01 0.1 1

COLLECTOR CURRENT : I

C

(A)

1

10

1000

100

Ta=25°C

V

CE

=−5V

I

C

/I

B

=20/1

tstg

tdon

tr

tf

Fig.6 Switching time

SWITCHING TIME : (ns)

1 10 1000.1

1

10

100

f

=

1MHz

I

C

=

0A

Ta

=

25°C

COLLECTOR OUTPUT CAPACITANCE : Cob (pF)

EMITTER INPUT CAPACITANCE : Cib (pF)

Cib

Cob

Fig.7 Collector output capacitance

vs. collector-base voltage

Emitter input capacitance

vs. emitter-base voltage

EMITTER TO BASE VOLTAGE : V

EB

(

V)

COLLECTOR TO BASE VOLTAGE : V

CB

(

V)

2SB1710TL

Mfr. #:

Manufacturer:

Description:

Bipolar Transistors - BJT PNP 30V 1A

Lifecycle:

New from this manufacturer.

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2SB1710TL