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IXTN40P50P

P1-P3P4-P5
© 2015 IXYS CORPORATION, All Rights Reserved
Symbol Test Conditions Maximum Ratings
V
DSS
T
J
= 25C to 150C - 500 V
V
DGR
T
J
= 25C to 150C, R
GS
= 1M - 500 V
V
GSS
Continuous 20 V
V
GSM
Transient 30 V
I
D25
T
C
= 25C - 40 A
I
DM
T
C
= 25C, Pulse Width Limited by T
JM
- 120 A
I
A
T
C
= 25C - 40 A
E
AS
T
C
= 25C 3.5 J
dv/dt I
S
I
DM
, V
DD
V
DSS
, T
J
150C 10 V/ns
P
D
T
C
= 25C 890 W
T
J
-55 ... +150 C
T
JM
150 C
T
stg
-55 ... +150 C
V
ISOL
50/60 Hz, RMS t = 1 minute 2500 V~
I
ISOL
1mA t = 1 second 3000 V~
M
d
Mounting Torque 1.5/13 Nm/lb.in
Terminal Connection Torque 1.3/11.5 Nm/lb.in
Weight 30 g
Symbol Test Conditions Characteristic Values
(T
J
= 25C, Unless Otherwise Specified) Min. Typ. Max.
BV
DSS
V
GS
= 0V, I
D
= - 250A - 500 V
V
GS(th)
V
DS
= V
GS
, I
D
= -1mA - 2.0 - 4.5 V
I
GSS
V
GS
= 20V, V
DS
= 0V 100 nA
I
DSS
V
DS
= V
DSS
,
V
GS
= 0V - 50 A
T
J
= 125C - 250 A
R
DS(on)
V
GS
= -10V, I
D
= 0.5 • I
D25
, Note 1 230 m
PolarP
TM
Power MOSFET
P-Channel Enhancement Mode
Avalanche Rated
IXTN40P50P
V
DSS
= - 500V
I
D25
= - 40A
R
DS(on)
230m
Features
International Standard Package
miniBLOC, with Aluminium Nitride
Isolation
Rugged PolarP
TM
Process
Avalanche Rated
Low Package Inductance
Advantages
Easy to Mount
Space Savings
High Power Density
Applications
High-Side Switches
Push Pull Amplifiers
DC Choppers
Automatic Test Equipment
Current Regulators
Either Source Terminal at miniBLOC
can be used as Main or Kelvin Source.
DS99936D(4/15)
miniBLOC, SOT-227
E153432
G
D
S
S
G = Gate D = Drain
S = Source
S
S
D
G
IXTN40P50P
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
Symbol Test Conditions Characteristic Values
(T
J
= 25C, Unless Otherwise specified) Min. Typ. Max.
g
fs
V
DS
= -10V, I
D
= 0.5 • I
D25
, Note 1 23 38 S
C
iss
11.5 nF
C
oss
V
GS
= 0V, V
DS
= - 25V, f = 1MHz 1150 pF
C
rss
93 pF
t
d(on)
37 ns
t
r
59 ns
t
d(off)
90 ns
t
f
34 ns
Q
g(on)
205 nC
Q
gs
V
GS
= -10V, V
DS
= 0.5 • V
DSS
, I
D
= 0.5 • I
D25
55 nC
Q
gd
75 nC
R
thJC
0.14C/W
R
thCS
0.05 C/W
Source-Drain Diode
Symbol Test Conditions Characteristic Values
(T
J
= 25C, Unless Otherwise Specified) Min. Typ. Max.
I
S
V
GS
= 0V - 40 A
I
SM
Repetitive, Pulse Width Limited by T
JM
-160 A
V
SD
I
F
= - 20A, V
GS
= 0V, Note 1 - 3.0 V
t
rr
477 ns
Q
RM
14.5 C
I
RM
- 61
A
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Note 1: Pulse test, t 300s, duty cycle, d 2%.
Resistive Switching Times
V
GS
= -10V, V
DS
= 0.5 • V
DSS
, I
D
= 0.5 • I
D25
R
G
= 1 (External)
I
F
= - 20A, -di/dt = -150A/s
V
R
= -100V, V
GS
= 0V
SOT-227B (IXTN) Outline
(M4 screws (4x) supplied)
© 2015 IXYS CORPORATION, All Rights Reserved
IXTN40P50P
Fig. 1. Output Characteristics @ T
J
= 25ºC
-40
-35
-30
-25
-20
-15
-10
-5
0
-9-8-7-6-5-4-3-2-10
V
DS
- Volts
I
D
- Amperes
V
GS
= -10V
- 7V
- 5V
- 6V
Fig. 2. Extended Output Characteristics @ T
J
= 25ºC
-90
-80
-70
-60
-50
-40
-30
-20
-10
0
-30-25-20-15-10-50
V
DS
- Volts
I
D
- Amperes
V
GS
= -10V
- 5V
- 6V
- 7V
Fig. 3. Output Characteristics @ T
J
= 125ºC
-40
-35
-30
-25
-20
-15
-10
-5
0
-18-16-14-12-10-8-6-4-20
V
DS
- Volts
I
D
- Amperes
V
GS
= -10V
- 7V
- 6V
- 5V
Fig. 4. R
DS(on)
Normalized to I
D
= - 20A Value vs.
Junction Temperature
0.4
0.8
1.2
1.6
2.0
2.4
-50 -25 0 25 50 75 100 125 150
T
J
- Degrees Centigrade
R
DS(on)
- Normalized
V
GS
= -10V
I
D
= - 40A
I
D
= - 20A
Fig. 5. R
DS(on)
Normalized to I
D
= - 20A Value vs.
Drain Current
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
-90-80-70-60-50-40-30-20-100
I
D
- Amperes
R
DS(on)
- Normalized
V
GS
= -10V
T
J
= 25ºC
T
J
= 125ºC
Fig. 6. Maximum Drain Current vs.
Case Temperature
-45
-40
-35
-30
-25
-20
-15
-10
-5
0
-50 -25 0 25 50 75 100 125 150
T
C
- Degrees Centigrade
I
D
- Amperes
P1-P3P4-P5

IXTN40P50P

Mfr. #:
Buy IXTN40P50P
Manufacturer:
Littelfuse
Description:
MOSFET -40.0 Amps -500V 0.230 Rds
Lifecycle:
New from this manufacturer.
Delivery:
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