NTD6416ANL, NVD6416ANL
www.onsemi.com
4
TYPICAL CHARACTERISTICS
0
200
400
600
800
1000
1200
1400
0 102030405060708090100
C, CAPACITANCE (pF)
T
J
= 25°C
V
GS
= 0 V
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 7. Capacitance Variation
C
iss
C
oss
C
rss
0 5 10 15 20 25
Q
T
Q
gd
Q
gs
0
2
4
6
8
10
Q
g
, TOTAL GATE CHARGE (nC)
Figure 8. Gate−to−Source Voltage and
Drain−to−Source Voltage versus Total Charge
V
DS
= 80 V
I
D
= 19 A
T
J
= 25°C
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
1
10
100
1000
1 10 100
t, TIME (ns)
R
G
, GATE RESISTANCE (W)
Figure 9. Resistive Switching Time Variation
versus Gate Resistance
t
d(off)
t
f
t
r
t
d(on)
V
DS
= 80 V
I
D
= 19 A
V
GS
= 10 V
0
5
10
15
20
0.5 0.55 0.60 0.65 0.70 0.75 0.80 0.85 0.90 0.95 1.0
I
S
, SOURCE CURRENT (A)
V
SD
, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 10. Diode Forward Voltage versus
Current
T
J
= 25°C
V
GS
= 0 V
0.001
0.1
1
10
100
0.1 10 100 1000
R
DS(on)
LIMIT
THERMAL LIMIT
PACKAGE LIMIT
V
GS
= 10 V
SINGLE PULSE
T
C
= 25°C
10 mS
100 mS
1 mS
10 mS
dc
I
D
, DRAIN CURRENT (A)
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
0
10
20
30
40
50
25 50 75 100 125 150 175
EAS, SINGLE PULSE DRAIN−TO−
SOURCE AVALANCHE ENERGY (mJ)
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 12. Resistive Switching Time Variation
versus Gate Resistance
I
D
= 18.2 A
100
80
60
40
20
0
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
V
DS
V
GS
0.01
1
