VS-70MT060WHTAPbF
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Vishay Semiconductors
Revision: 10-Jun-15
4
Document Number: 94469
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Fig. 5 - Maximum Forward Voltage Drop vs.
Instantaneous Forward Current
Fig. 6 - Typical Zero Gate Voltage Collector Current
Fig. 7 - Typical Gate Threshold Voltage
Fig. 8 - Typical Energy Losses vs. I
C
( T
J
= 150 °C)
Fig. 9 - Switching Time vs. I
C
Fig. 10 - Reverse BIAS SOA, T
J
= 150 °C
I
F
- Instantaneous Forward Current (A)
V
FM
- Forward Voltage Drop (V)
0.5 1.0 1.5 2.0 2.5 3.0
3.5
0
1
10
1000
100
94469_05
T
J
= 25 °C
T
J
= 150 °C
I
CES
- Collector to Emitter Current (mA)
V
CES
- Collector to Emitter Voltage (V)
300 400 500
600
200
150 °C
25 °C
0.0001
0.001
0.01
0.1
10
1.0
94469_06
V
GEth
(V)
I
C
(mA)
1.0
0.1
2.5
3.0
4.5
3.5
4.0
94469_07
25 °C
125 °C
Energy (μJ)
I
C
- Collector to Emitter Current (A)
20 40 60
80
0
E
on
E
off
0
400
200
800
600
1400
1200
1000
94469_08
Switching Time (ns)
I
C
- Collector to Emitter Current (A)
20 40 60
80
0
t
d(off)
t
d(on)
t
r
t
f
10
1000
100
94469_09
I
C
- Collector to Emitter Current (mA)
I
C
- Collector to Emitter Voltage (V)
100 200 300 400 500 600
700
0
0
150
100
50
350
250
200
300
94469_10
