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IXTP8N70X2M

P1-P3P4-P5
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXTP8N70X2M
Fig. 8. Transconductance
0
2
4
6
8
10
12
14
01234567891011
I
D
- Amperes
g
f s
- Siemens
T
J
= - 40ºC
125ºC
25ºC
Fig. 9. Forward Voltage Drop of Intrinsic Diode
0
5
10
15
20
25
0.30.40.50.60.70.80.91.0
V
SD
- Volts
I
S
- Amperes
T
J
= 125ºC
T
J
= 25ºC
Fig. 10. Gate Charge
0
2
4
6
8
10
024681012
Q
G
- NanoCoulombs
V
GS
- Volts
V
DS
= 350V
I
D
= 4A
I
G
= 10mA
Fig. 7. Input Admittance
0
1
2
3
4
5
6
7
8
9
10
3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5
V
GS
- Volts
I
D
- Amperes
T
J
= 125ºC
25ºC
- 40ºC
Fig. 11. Capacitance
0.1
1
10
100
1000
10000
1 10 100 1000
V
DS
- Volts
Capacitance - PicoFarad
s
f
= 1 MHz
C
iss
C
rss
C
oss
Fig. 12. Output Capacitance Stored Energy
0
1
2
3
4
5
6
7
8
9
10
0 100 200 300 400 500 600 700
V
DS
- Volts
E
OSS
- MicroJoules
© 2017 IXYS CORPORATION, All Rights Reserved
IXYS REF: T_8N70X2(X2-R2T5) 1-19-17
IXTP8N70X2M
Fig. 13. Forward-Bias Safe Operating Area
0.01
0.1
1
10
100
1 10 100 1,000
V
DS
- Volts
I
D
- Amperes
T
J
= 150ºC
T
C
= 25ºC
Single Pulse
25μs100μs
R
DS(
on
)
Limit
DC
10ms
100ms
1s
1ms
Fig. 14. Maximum Transient Thermal Impedance
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width - Seconds
Z
(th)JC
- K / W
P1-P3P4-P5

IXTP8N70X2M

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Description:
MOSFET N-CHANNEL 700V 4A TO220
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