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DMN2013UFX-7

P1-P3P4-P6
DMN2013UFX
Document number: DS36657 Rev. 2 - 2
1 of 6
www.diodes.com
March 2014
© Diodes Incorporated
DMN2013UFX
Dual N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V
(BR)DSS
R
DS(ON)
max
I
D
max
T
A
= +25°C
20V
11.5m @ V
GS
= 4.5V
10 A
14m @ V
GS
= 2.5V
9 A
Description
This new generation MOSFET has been designed to minimize the on-
state resistance (R
DS(on)
) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
Applications
General Purpose Interfacing Switch
Power Management Functions
Features and Benefits
Low On-Resistance
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
ESD Protected
Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: W-DFN5020-6
Case Material: Molded Plastic, “Green” Molding Compound. UL
Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram Below
Weight: 0.03 grams (approximate)
Ordering Information (Note 4)
Part Number Case Packaging
DMN2013UFX-7 W-DFN5020-6 3000 / Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.htmlfor more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
Date Code Key
Year 2010 2011 2012 2013 2014 2015 2016
Code X Y Z A B C D
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
Equivalent Circuit
Top View
W-DFN5020-6
FX = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: X = 2010)
M = Month (ex: 9 = September)
Bottom View
S1S1G1
S2S2G2
D1/D2
Top View
Pin-Out
ESD PROTECTED
DMN2013UFX
Document number: DS36657 Rev. 2 - 2
2 of 6
www.diodes.com
March 2014
© Diodes Incorporated
DMN2013UFX
Maximum Ratings (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Drain-Source Voltage
V
DSS
20 V
Gate-Source Voltage
V
GSS
±8 V
Continuous Drain Current (Note 5) V
GS
= 4.5V
Steady
State
T
A
= +25°C
T
A
= +70°C
I
D
10
8
A
Continuous Drain Current (Note 5) V
GS
= 2.5V
Steady
State
T
A
= +25°C
T
A
= +70°C
I
D
9
7
A
Pulsed Drain Current (Note 7)
I
DM
80 A
Thermal Characteristics
Characteristic Symbol Max Unit
Power Dissipation (Note 5)
P
D
0.78 W
Thermal Resistance, Junction to Ambient @T
A
= +25°C (Note 5) R
JA
163 °C/W
Power Dissipation (Note 6)
P
D
2.14 W
Thermal Resistance, Junction to Ambient @T
A
= +25°C (Note 6) R
JA
59 °C/W
Operating and Storage Temperature Range
T
J
, T
STG
-55 to +150 °C
Electrical Characteristics (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
BV
DSS
20
— —
V
V
GS
= 0V, I
D
= 250A
Zero Gate Voltage Drain Current T
J
= +25°C I
DSS
— —
1 A
V
DS
= 16V, V
GS
= 0V
Gate-Source Leakage
I
GSS
— —
±10 A
V
GS
= ±8V, V
DS
= 0V
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
V
GS
(
th
)
0.5 — 1.1 V
V
DS
= V
GS
, I
D
= 250A
Static Drain-Source On-Resistance
R
DS (ON)
—
8.4
11.5
m
V
GS
= 4.5V, I
D
= 8.5A
8.5
12.0
V
GS
= 4.0V, I
D
= 8.5A
8.6
12.5
V
GS
= 3.5V, I
D
= 8.5A
9.0
13.5
V
GS
= 3.1V, I
D
= 8A
9.6
14.0
V
GS
= 2.5V, I
D
= 8A
Forward Transfer Admittance
|Y
fs
|
— 18.2 — S
V
DS
= 5V, I
D
= 4A
Diode Forward Voltage
V
SD
— — 1.2 V
V
GS
= 0V, I
S
= 8.5A
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
C
iss
— 2607 —
pF
V
DS
= 10V, V
GS
= 0V,
f = 1.0MHz
Output Capacitance
C
oss
— 255 —
pF
Reverse Transfer Capacitance
C
rss
— 236 —
pF
Gate Resistance
R
g
— 1.2 —
V
DS
= 0V, V
GS
= 0V, f = 1MHz
Total Gate Charge (V
GS
= 4.5V) Q
g
— 32.4 —
nC
V
DS
= 10V, I
D
= 8.5A
Total Gate Charge (V
GS
= 8V) Q
g
— 57.4 —
nC
Gate-Source Charge
Q
g
s
— 3.5 —
nC
Gate-Drain Charge
Q
g
d
— 4.0 —
nC
Turn-On Delay Time
t
D
(
on
)
— 8.6 —
ns
V
DS
= 10V, I
D
= 8.5A
V
GS
= 4.5V, R
G
= 1.8
Turn-On Rise Time
t
r
— 20.3 —
ns
Turn-Off Delay Time
t
D
(
off
)
— 42.5 —
ns
Turn-Off Fall Time
t
f
— 13.7 —
ns
Notes: 5. Device mounted on FR-4 PCB with minimum recommended pad layout, single sided.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate
7. Repetitive rating, pulse width limited by junction temperature.
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to production testing.
DMN2013UFX
Document number: DS36657 Rev. 2 - 2
3 of 6
www.diodes.com
March 2014
© Diodes Incorporated
DMN2013UFX
0.0
5.0
10.0
15.0
20.0
25.0
30.0
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2
V , DRAIN-SOURCE VOLTAGE (V)
Figure 1 Typical Output Characteristic
DS
I, D
AI
E
(A)
D
V= 2.5V
GS
V= 4.5V
GS
V= 8.0V
GS
V= 2.0V
GS
V= 1.5V
GS
V= 1.2V
GS
V= 1.1V
GS
0
5
10
15
20
25
30
0 0.5 1 1.5 2 2.5 3
V , GATE-SOURCE VOLTAGE (V)
GS
Figure 2 Typical Transfer Characteristics
I, D
R
AI
N
C
U
R
R
E
N
T
(A)
D
V = 5.0V
DS
T = 150°C
A
T = 125°C
A
T = 85°C
A
T = 25°C
A
T = -55°C
A
0.006
0.007
0.008
0.009
0.01
0.011
0.012
1 6 11 16 21 26 31
I , DRAIN-SOURCE CURRENT (A)
D
Figure 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
R
, D
R
AIN-S
O
U
R
CE
O
N-
R
ESISTANCE ( )
DS(ON)
V = 2.5V
GS
V = 4.5V
GS
V = 4.0V
GS
V= 3.5V
GS
0
0.005
0.01
0.015
0.02
0.025
0.03
12345678
V , GATE-SOURCE VOLTAGE (V)
GS
Figure 4 Typical Transfer Characteristic
R
,
D
R
AI
N
-S
O
U
R
C
E
O
N
-
R
ESIS
T
A
N
C
E ( )
DS(ON)
I= 8.5A
D
0
0.002
0.004
0.006
0.008
0.01
0.012
0.014
0.016
0.018
0.02
0 5 10 15 20 25 30
I , DRAIN CURRENT (A)
D
Figure 5 Typical On-Resistance vs.
Drain Current and Temperature
, D
AIN-S
U
CE
N-
ESISTANCE ( )
DS(ON)
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
V = 4.5V
GS
0
0.5
1
1.5
2
-50-25 0 255075100125150
T , JUNCTION TEMPERATURE ( C)
Figure 6 On-Resistance Variation with Temperature
J
R
, D
R
AIN-S
O
U
R
C
E
ON-RESISTANCE (NORMALIZED)
DS(ON)
V=.5V
I= 5A
GS
D
2
V= V
I= 10A
GS
D
4.5
P1-P3P4-P6

DMN2013UFX-7

Mfr. #:
Buy DMN2013UFX-7
Manufacturer:
Diodes Incorporated
Description:
MOSFET 20V N-Ch Enh Mode 8Vgss 10A 0.78W
Lifecycle:
New from this manufacturer.
Delivery:
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