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STPS12045TV

P1-P3P4-P4
STPS12045TV
®
June 1999 - Ed: 3A
POWER SCHOTTKY RECTIFIER
I
F(AV)
2 x 60 A
V
RRM
45 V
Tj (max) 150 °C
V
F
(max) 0.67 V
MAIN PRODUCT CHARACTERISTICS
VERY SMALL CONDUCTION LOSSES
NEGLIGIBLE SWITCHING LOSSES
EXTREMELY FAST SWITCHING
LOW THERMAL RESISTANCE
INSULATED PACKAGE:
Insulating voltage = 2500 V
(RMS)
Capacitance = 45 pF
FEATURES AND BENEFITS
Dual power Schottky rectifier suited for Switched
Mode Power Supplies and high frequency DC to
DC converters.
Packaged in ISOTOP, this device is especially in-
tended for use in low voltage, high frequency in-
verters, free wheeling and polarity protection
applications.
DESCRIPTION
ISOTOP
TM
A1K1
A2K2
Symbol Parameter Value Unit
V
RRM
Repetitive peak reverse voltage
45 V
I
F(RMS)
RMS forward current
125 A
I
F(AV)
Average forward current Tc = 95°C
δ
= 0.5
Per diode
Per device
60
120
A
I
FSM
Surge non repetitive forward current tp = 10 ms Sinusoidal
900 A
I
RRM
Repetitive peak reverse current tp = 2
µ
s square F = 1kHz
2A
I
RSM
Non repetitive peak reverse current tp = 100
µ
s square
5A
T
stg
Storage temperature range
- 55 to + 150
°
C
Tj
Maximum operating junction temperature *
150 °C
dV/dt
Critical rate of rise of reverse voltage
10000 V/
µ
s
ABSOLUTE RATINGS
(limiting values) per diode
ISOTOP is a registered trademark of STMicroelectronics
* :
dPtot
dTj
<
1
Rth
(
j
−
a
)
thermal runaway condition for a diode on its own heatsink
1/4
Symbol Parameter Value Unit
R
th (j-c)
Junction to case Per diode
1
°
C/W
Total
0.55
R
th (c)
Coupling
0.1
When the diodes 1 and 2 are used simultaneously :
∆ Tj(diode 1) = P(diode) x R
th
(Per diode) + P(diode 2) x R
th(c)
THERMAL RESISTANCES
Symbol Parameter Tests Conditions Min. Typ. Max. Unit
I
R
*
Reverse leakage current Tj = 25
°
CV
R
= V
RRM
1mA
Tj = 125
°
C
43 150
V
F
*
Forward voltage drop Tj = 25
°
CI
F
= 120 A
0.91 V
Tj = 125
°
CI
F
= 120 A
0.72 0.87
Tj = 125
°
CI
F
= 60 A
0.52 0.67
STATIC ELECTRICAL CHARACTERISTICS
(per diode)
Pulse test : * tp = 380 µs, δ < 2%
To evaluate the conduction losses use the following equation :
P = 0.47 x I
F(AV)
+ 0.00333 x I
F
2
(RMS)
0 25 50 75 100 125 150
0
10
20
30
40
50
60
70
Tamb(°C)
IF(av)(A)
Rth(j-a)=5°C/W
Rth(j-a)=Rth(j-c)
T
δ
=tp/T
tp
Fig. 2:
Average current versus case temperature
(
δ
= 0.5) (per diode).
0 1020304050607080
0
5
10
15
20
25
30
35
40
45
50
55
60
IF(av) (A)
PF(av)(W)
T
δ
=tp/T
tp
δ = 1
δ = 0.5
δ = 0.2
δ = 0.1
δ = 0.05
Fig. 1:
Average forward power dissipation versus
average forward current (per diode).
STPS12045TV
2/4
1E-3 1E-2 1E-1 1E+0 5E+0
0.0
0.2
0.4
0.6
0.8
1.0
tp(s)
Zth(j-c)/Rth(j-c)
T
δ
=tp/T
tp
Single pulse
δ = 0.5
δ = 0.2
δ = 0.1
Fig.4 :
Relative variation of thermal transient
impedance junction to case versus pulse duration.
0 5 10 15 20 25 30 35 40 45
1E+0
1E+1
1E+2
1E+3
1E+4
1E+5
5E+5
VR(V)
IR(µA)
Tj=150°C
Tj=100°C
Tj=125°C
Tj=75°C
Tj=50°C
Tj=25°C
Fig. 5:
Reverse leakage current versus reverse
voltage applied (typical values, per diode).
1E-3 1E-2 1E-1 1E+0
0
50
100
150
200
250
300
350
400
t(s)
IM(A)
Tc=75°C
Tc=100°C
Tc=125°C
I
M
t
δ
=0.5
Fig. 3:
Non repetitive surge peak forward current
versus overload duration (maximum values, per
diode).
12 51020 50
0.1
1.0
10.0
VR(V)
C(nF)
F=1MHz
Tj=25°C
Fig. 6:
Junction capacitance versus reverse
voltage applied (typical values, per diode).
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2
1E+1
1E+2
1E+3
VFM(V)
IFM(A)
Typical values
Tj=125°C
Tj=125°C
Tj=25°C
Fig. 7:
Forward voltage drop versus forward
current (maximum values, per diode).
STPS12045TV
3/4
P1-P3P4-P4

STPS12045TV

Mfr. #:
Buy STPS12045TV
Manufacturer:
STMicroelectronics
Description:
Schottky Diodes & Rectifiers 2X60 Amp 45 Volt
Lifecycle:
New from this manufacturer.
Delivery:
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