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TZX6V2B-TAP

P1-P3P4-P6P7-P7
TZX-Series
www.vishay.com
Vishay Semiconductors
Rev. 2.4, 14-Apr-14
4
Document Number: 85614
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
• Additional measurement of voltage group TZM9V1 to TZX36, I
R
at 95 % V
Zmin.
40 nA at T
j
= 25 °C
(1)
Additional measurement
BASIC CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
Fig. 1 - Thermal Resistance vs. Lead Length Fig. 2 - Total Power Dissipation vs. Ambient Temperature
TZX22B 21.6 22.6 2 1 17 0.04 20.5 65
TZX22C 22.3 23.3 2 1 17 0.04 21.2 65
TZX24A 22.9 24 2 1 19 0.04 21.8 70
TZX24B 23.6 24.7 2 1 19 0.04 22.4 70
TZX24C 24.3 25.5 2 1 19 0.04 23.1 70
TZX24X 22.61 23.77 2 1 19 0.04 21.5 70
TZX27A 25.2 26.6 2 1 21 0.04 23.9 80
TZX27B 26.2 27.6 2 1 21 0.04 24.9 80
TZX27C 27.2 28.6 2 1 21 0.04 25.8 80
TZX27X 26.99 28.39 2 1 21 0.04 25.6 80
TZX30A 28.2 29.6 2 1 23 0.04 26.8 100
TZX30B 29.2 30.6 2 1 23 0.04 27.7 100
TZX30C 30.2 31.6 2 1 23 0.04 28.7 100
TZX30X 29.02 30.51 2 1 23 0.04 27.6 100
TZX33A 31.2 32.6 2 1 25 0.04 29.6 120
TZX33B 32.2 33.6 2 1 25 0.04 30.6 120
TZX33C 33.2 34.5 2 1 25 0.04 31.5 120
TZX36A 34.2 35.7 2 1 27 0.04 32.5 140
TZX36B 35.3 36.8 2 1 27 0.04 33.5 140
TZX36C 36.4 38 2 1 27 0.04 34.6 140
TZX36X 35.36 37.19 2 1 27 0.04 33.6 140
ELECTRICAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PART NUMBER
ZENER VOLTAGE
RANGE
TEST CURRENT REVERSE LEAKAGE CURRENT
DYNAMIC
RESISTANCE
V
Z
at I
ZT1
I
ZT1
I
R
at V
R
I
R
at V
R
(1)
Z
Z
at I
ZT1
V mA μA V μA V
MIN.
MAX.
MAX. MAX.
MAX.
95 9611
0 5 10 15
0
100
200
300
400
500
20
ll
R
thJA
- Therm. Resist. Junction Ambient (K/W)
I - Lead Length (mm)
T
L
= constant
0 120 160
0
100
300
400
500
600
P
tot
- Total Power Dissipation (mW)
T
amb
- Ambient Temperature (°C)
200
95 9602
200
80
40
TZX-Series
www.vishay.com
Vishay Semiconductors
Rev. 2.4, 14-Apr-14
5
Document Number: 85614
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 3 - Typical Change of Working Voltage under Operating
Conditions at T
amb
= 25 °C
Fig. 4 - Typical Change of Working Voltage vs.
Junction Temperature
Fig. 5 - Temperature Coefficient of Vz vs. Z-Voltage
Fig. 6 - Diode Capacitance vs. Z-Voltage
Fig. 7 - Forward Current vs. Forward Voltage
Fig. 8 - Z-Current vs. Z-Voltage
10 15 20
1
10
100
1000
V
Z
- Voltage Change (mV)
V
Z
- Z-Voltage (V)
25
95 9598
I
Z
= 5 mA
0
5
- 60 60 120 180
0.8
0.9
1.0
1.1
1.2
1.3
V
Ztn
- Relative Voltage Change
T
j
- Junction Temperature (°C)
240
95 9599
0
V
Ztn
= V
Zt
/V
Z
(25 °C)
0
TK
VZ
= 10 x 10
-4
/K
8 x 10
-4
/K
2 x 10
-4
/K
6 x 10
-4
/K
4 x 10
-4
/K
- 4 x 10
-4
/K
- 2 x 10
-4
/K
- 5
0
5
10
15
V
Z
- Z-Voltage (V)
95 9600
I
Z
= 5 mA
0 10 203040 50
TK
VZ
- Temperature Coefficient
of V
Z
(10
-4
/K)
10 15
0
50
100
150
200
C
D
- Diode Capacitance (pF)
V
Z
- Z-Voltage (V)
25
95 9601
20
T
j
= 25 °C
V
R
= 2 V
0
5
0 0.2 0.4 0.6 0.8
0.001
0.01
0.1
1
10
100
1.0
959605
I
F
- Forward Current (mA)
V
F
- Forward Voltage (V)
T
j
= 25 °C
8
20
95 9604
0
20
40
60
80
100
I
Z
- Z-Current (mA)
P
tot
= 500 mW
T
amb
= 25 °C
046
12
V
Z
- Z-Voltage (V)
TZX-Series
www.vishay.com
Vishay Semiconductors
Rev. 2.4, 14-Apr-14
6
Document Number: 85614
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 9 - Z-Current vs. Z-Voltage Fig. 10 - Differential Z-Resistance vs. Z-Voltage
Fig. 11 - Thermal Response
PACKAGE DIMENSIONS in millimeters (inches): DO-35
15 20 25 30
0
10
20
30
40
50
I
Z
- Z-Current (mA)
V
Z
- Z-Voltage (V)
35
95 9607
P
tot
= 500 mW
T
amb
= 25 °C
0 101520
1
10
100
1000
25
95 9606
T
j
= 25 °C
I
Z
= 1 mA
5 mA
10 mA
V
Z
- Z-Voltage (V)
r
Z
- Differential Z-Resistance (Ω)
5
1
10
100
1000
Z
thp
- Thermal Resistance for Pulse Cond. (K/W)
t
p
- Pulse Length (ms)
95 9603
10
-1
10
0
10
1
10
2
t
p
/T = 0.5
t
p
/T = 0.2
t
p
/T = 0.1
t
p
/T = 0.05
t
p
/T = 0.02
t
p
/T = 0.01
Single Pulse
R
thJA
= 300 K/W
T = T
j max.
- T
amb
i
ZM
= (- V
Z
+ (V
Z
2
+ 4r
zj
x T/Z
thp
)
1/2
)/(2r
zj
)
94 9366
Rev. 6 - Date: 19. December 2011
Document no.: SB-V-3906.04-031(4)
26 min. [1.024] 3.9 max. [0.154] 26 min. [1.024]
Cathode Identication
1.7 [0.067]
1.3 [0.050]
3.1 min. [0.120]
Ø 0.6 max. [0.024]
Ø 0.4 min. [0.015]
P1-P3P4-P6P7-P7

TZX6V2B-TAP

Mfr. #:
Buy TZX6V2B-TAP
Manufacturer:
Vishay Semiconductors
Description:
Zener Diodes 6.2 Volt 0.5W 5%
Lifecycle:
New from this manufacturer.
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