HER601G B0G

CREAT BY ART
- Glass passivated chip junction
- High efficiency, Low VF
- High current capability
- High reliability
- High surge current capability
- Halogen-free according to IEC 61249-2-21
Molding compound, UL flammability classification rating 94V-0
Part No. with suffix "H" means AEC-Q101 qualified
Packing code with suffix "G" means green compound (halogen-free)
Terminal: Pure tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 2 whisker test
V
RRM
50 100 200 300 400 600 V
V
RMS
35 70 140 210 280 420 V
V
DC
50 100 200 300 400 600 V
I
F(AV)
A
t
rr
75 ns
C
J
65 pF
R
θJA
°C/W
T
J
°C
T
STG
°C
Note 1: Pulse Test with PW=300μs, 1% Duty Cycle
Document Number: DS_D1408002 Version: G15
SYMBOL
HER
601G
HER
602G
HER
603G
HER601G - HER606G
Taiwan Semiconductor
6A, 50V - 600V Glass Passivated Hi
g
h Efficient Rectifiers
FEATURES
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
HER
604G
HER
605G
HER
606G
UNIT
Maximum repetitive peak reverse voltage
MECHANICAL DATA
Case: R-6
Weight: 1.65 g (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T
A
=25°C unless otherwise noted)
PARAMETER
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current 6
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
I
FSM
150
μA
200
Typical junction capacitance (Note 2)
A
Maximum instantaneous forward voltage (Note 1)
@ 6 A
V
F
V
Maximum reverse current @ rated V
R
T
J
=25°C
T
J
=125°C
37
Operating junction temperature range - 55 to +150
Storage temperature range - 55 to +150
I
R
10
Note 3: Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C.
R-6
Note 2: Reverse Recovery Test Conditions: I
F
=0.5A, I
R
=1.0A, I
RR
=0.25A
1.0 1.3 1.7
Maximum reverse recovery time (Note 2) 50
80
Typical thermal resistance
CREAT BY ART
PART NO.
*: Optional available
PART NO.
(T
A
=25°C unless otherwise noted)
Document Number: DS_D1408002 Version: G15
HER605GHER605GHA0G
PART NO.
SUFFIX
PACKING CODE
PACKING CODE
SUFFIX
DESCRIPTION
HA0 G
AEC-Q101 qualified
Green compound
PART NO.
SUFFIX
H
400 / Bulk packing
1,000 / 13" Paper reel
700 / Ammo box
PACKING
R0 R-6
B0
HER601G thru HER606G
Taiwan Semiconductor
ORDERING INFORMATION
PACKING CODE
PACKING CODE
SUFFIX
(*)
PACKAGE
R-6
Note 1: "x" defines voltage from 50V (HER601G) to 600V (HER606G)
EXAMPLE
PREFERRED P/N
HER60xG
(Note 1)
A0
G
R-6
RATINGS AND CHARACTERISTICS CURVES
0
1
2
3
4
5
6
7
0 25 50 75 100 125 150
AVERAGE FORWARD CURRENT (A)
AMBIENT TEMPERATURE (
°
C)
FIG.1 MAXIMUM FORWARD CURRENT
DERATING CURVE
RESISTIVE OR
INDUCTIVE LOAD
0
25
50
75
100
125
150
175
200
225
250
1 10 100
PEAK FORWARD SURGE CURRENT (A)
NUMBER OF CYCLES AT 60 Hz
FIG. 3 MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
8.3ms Single Half Sine Wave
0.1
1
10
100
1000
0 20 40 60 80 100 120 140
INSTANTANEOUS REVERSE CURRENT (μA)
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
FIG. 2 TYPICAL REVERSE CHARACTERISTICS
T
J
=125°C
T
J
=25°C
T
J
=75°C
0.1
1
10
100
0 0.2 0.4 0.6 0.8 1 1.2 1.4
INSTANTANEOUS FORWARD CURRENT (A)
FORWARD VOLTAGE (V)
FIG. 4 TYPICAL FORWARD CHARACTERISTICS
HER606G
HER605G
HER601G-HER604G
CREAT BY ART
Min Max Min Max
A 6.80 7.20 0.268 0.283
B 1.20 1.30 0.047 0.051
C 25.40 - 1.000 -
D 8.60 9.10 0.339 0.358
E 25.40 - 1.000 -
P/N = Specific Device Code
G = Green Compound
YWW = Date Code
F = Factory Code
Document Number: DS_D1408002 Version: G15
MARKING DIAGRAM
R-6
HER601G - HER606G
Taiwan Semiconductor
PACKAGE OUTLINE DIMENSIONS
DIM.
Unit (mm) Unit (inch)
0
25
50
75
100
125
150
175
0.1 1 10 100
JUNCTION CAPACITANCE (pF)
REVERSE VOLTAGE (V)
FIG. 5 TYPICAL JUNCTION CAPACITANCE
HER606G
HER601G-HER605G
f=1.0MHz
Vslg=50mVp-p

HER601G B0G

Mfr. #:
Manufacturer:
Taiwan Semiconductor
Description:
DIODE GEN PURP 50V 6A R-6
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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