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SQM60N06-15_GE3

P1-P3P4-P6P7-P9P10-P11
SQM60N06-15
www.vishay.com
Vishay Siliconix
S11-2035-Rev. C, 17-Oct-11
4
Document Number: 64710
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (T
A
= 25 °C, unless otherwise noted)
On-Resistance vs. Junction Temperature
On-Resistance vs. Gate-to-Source Voltage
Source Drain Diode Forward Voltage
Threshold Voltage
Drain Source Breakdown vs. Junction Temperature
0.5
0.9
1.3
1.7
2.1
2.5
- 50 - 25 0 25 50 75 100 125 150 175
I
D
=30A
V
GS
=10V
T
J
- Junction Temperature (°C)
(Normalized)
R
DS(on)
- On-Resistance
0
0.02
0.04
0.06
0.08
0.10
0246810
T
J
= 25 °C
T
J
= 150 °C
R
DS(on)
- On-Resistance (Ω)
V
GS
- Gate-to-Source Voltage (V)
V
SD
- Source-to-Drain Voltage (V)
- Source Current (A)I
S
0 0.2 0.4 0.6 0.8 1.0 1.2
1
0.01
0.001
0.1
10
100
T
J
= 25 °C
T
J
= 150 °C
- 1.7
- 1.2
- 0.7
- 0.2
0.3
0.8
- 50 - 25 0 25 50 75 100 125 150 175
I
D
=5mA
I
D
= 250 μA
V
GS(th)
Variance (V)
T
J
- Temperature (°C)
- 50 - 25 0 25 50 75 100 125 150 175
V
DS
- Drain-to-Source Voltage (V)
T
J
- Junction Temperature (°C)
I
D
=10mA
60
64
68
72
76
80
SQM60N06-15
www.vishay.com
Vishay Siliconix
S11-2035-Rev. C, 17-Oct-11
5
Document Number: 64710
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
THERMAL RATINGS (T
A
= 25 °C, unless otherwise noted)
Safe Operating Area
Normalized Thermal Transient Impedance, Junction-to-Ambient
10
-4
10
-3
10
-2
10
-1
1 10 100 1000
1
0.01
0.001
0.1
0.0001
Square Wave Pulse Duration (s)
Normalized Effective Transient
Thermal Impedance
SQM60N06-15
www.vishay.com
Vishay Siliconix
S11-2035-Rev. C, 17-Oct-11
6
Document Number: 64710
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
THERMAL RATINGS (T
A
= 25 °C, unless otherwise noted)
Normalized Thermal Transient Impedance, Junction-to-Case
Note
• The characteristics shown in the two graphs
- Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C)
- Normalized Transient Thermal Impedance Junction-to-Case (25 °C)
are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single
pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part
mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities
can widely vary depending on actual application parameters and operating conditions.
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?64710
.
Square Wave Pulse Duration (s)
2
1
0.1
0.01
10
-4
10
-3
10
-2
10
-1
110
Normalized Effective Transient
Thermal Impedance
0.2
0.1
Duty Cycle = 0.5
30
0.05
0.02
Single Pulse
P1-P3P4-P6P7-P9P10-P11

SQM60N06-15_GE3

Mfr. #:
Buy SQM60N06-15_GE3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET 60V 60A 100W AEC-Q101 Qualified
Lifecycle:
New from this manufacturer.
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