LH1262CB

LH1262CAC, LH1262CACTR, LH1262CB
www.vishay.com
Vishay Semiconductors
Rev. 1.4, 26-Sep-11
1
Document Number: 83802
For technical questions, contact: optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Dual Photovoltaic MOSFET Driver Solid-State Relay
DESCRIPTION
The LH1262CB, LH1262CAC photovoltaic MOSFET driver
consists of two LEDs optically coupled to two photodiode
arrays. The photodiode array provides a floating source with
adequate voltage and current to drive high-power MOSFET
transistors. Optical coupling provides a high I/O isolation
voltage. In order to turn the MOSFET off, an external
resistance (gate-to-source) is required for gate discharge.
FEATURES
High open circuit voltage
High short circuit current
Isolation test voltage 5300 V
RMS
Logic compatible input
High reliability
Compliant to RoHS Directive 2002/95/EC and
in accordance to WEEE 2002/96/EC
APPLICATIONS
High-side driver
Solid state relays
Floating power supply
Power control
Data acquisition
•ATE
Isolated switching
Note
See “Solid-State Relays” (application note 56)
+ Control 1
- Control 1
+ Control 2
- Control 2
- Control 1
+ Control 1
- Control 2
+ Control 2
8675
1324
i179020_6
DIP
SMD
AGENCY APPROVALS
UL1577: pending
BSI/BABT: pending
DIN EN: pending
FIMKO: pending
ORDERING INFORMATION
LH1262###TR
PART NUMBER ELECTR.
VARIATION
PACKAGE
CONFIG.
TAPE AND
REEL
PACKAGE UL, BSI, VDE, FIMKO
SMD-8 LH1262CAC
SMD-8, tape and reel LH1262CACTR
DIP-8 LH1262CB
> 0.1 mm
7.62 mm
DIP
SMD
LH1262CAC, LH1262CACTR, LH1262CB
www.vishay.com
Vishay Semiconductors
Rev. 1.4, 26-Sep-11
2
Document Number: 83802
For technical questions, contact: optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
maximum ratings for extended periods of the time can adversely affect reliability.
(1)
Refer to reflow profile for soldering conditions for surface mounted devices (SMD). Refer to wave profile for soldering conditions for through
hole devices (DIP).
Note
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluations. Typical values are for information only and are not part of the testing requirements.
Note
(1)
f = 1.0 kHz, pulse width = 100 μs, load (R
L
) = 1.0 MΩ, 15 pF; measured at 90 % rated voltage (t
on
), 10 % rated voltage (t
off
). Actuation speed
depends upon the external t
on
and t
off
circuitry and the capacitance of the MOSFET.
FUNCTIONAL DESCRIPTION
Figure 1 outlines the IV characteristics of the illuminated photodiode array (PDA). For operation at voltages below V
OC
, the PDA
acts as a nearly constant current source. The actual region of operation depends upon the load.
The amount of current applied to the LED (pins 1 and 2 or 3 and 4) determines the amount of light produced for the PDA. For
high temperature operation, more LED current may be required.
ABSOLUTE MAXIMUM RATINGS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
SSR
LED input ratings continuous forward current I
F
50 mA
LED input ratings reverse voltage I
R
10 μA V
R
5.0 V
Photodiode array reverse voltage I
R
2.0 μA V
R
100 V
Ambient operating temperature range T
amb
- 40 to + 85 °C
Storage temperature range T
stg
- 40 to + 150 °C
Pin soldering time
(1)
t = 7.0 s max. T
S
270 °C
Input to output isolation voltage t = 60 s min. V
ISO
5300 V
RMS
ELECTRICAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
LED forward voltage I
F
= 10 mA V
F
1.15 1.26 1.45 V
Detector forward voltage I
F
= 10 μA V
F(PDA)
14 V
Detector reverse voltage I
R
= 2.0 μA V
R(PDA)
200 V
Open circuit voltage (pins 5, 6 or 7, 8)
I
F
= 5.0 mA V
OC
10 12.95 15 V
I
F
= 10 mA V
OC
13.45 V
I
F
= 20 mA V
OC
13.92 V
Short circuit current (pins 5, 6 or 7, 8)
I
F
= 5.0 mA I
SC
1.0 1.6 6.5 μA
I
F
= 10 mA I
SC
2.6 3.4 14 μA
I
F
= 20 mA I
SC
6.9 μA
SWITCHING CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Turn-on time I
F
= 20 mA
(1)
t
on
35 μs
Turn-off time I
F
= 20 mA
(1)
t
off
90 μs
LH1262CAC, LH1262CACTR, LH1262CB
www.vishay.com
Vishay Semiconductors
Rev. 1.4, 26-Sep-11
3
Document Number: 83802
For technical questions, contact: optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Typical Dual Form A Solid-State Relay Application
PACKAGE DIMENSIONS in inches (millimeters)
ilh1262cb_08
P-channel
JFET
P-channel
JFET
2.0 MΩ
2.0 MΩ
5
6
7
8
1
2
3
4
Channel 1
control
Channel 2
control
+
+
Switch 1
N-channel
MOSFETs
Switch 2
N-channel
MOSFETs
i178008
pin one ID
6.81
6.48
9.91
9.63
1.14
0.76
4° typ.
2.54 typ.
10°
3° to 9°
7.62 typ.
0.56
0.46
0.30
0.20
3.30
2.79
3.81
3.30
0.89
0.51
6.35
5.84
4
3
2
1
0.79
1.27
5
6
78
DIP
ISO method A

LH1262CB

Mfr. #:
Manufacturer:
Vishay Semiconductors
Description:
MOSFET Output Optocouplers Dual Photovoltaic MOSFET Driver
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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