IPD50N10S3L16ATMA1

IPD50N10S3L-16
13 Typical avalanche energy 14 Typ. drain-source breakdown voltage
E
AS
= f(T
j
) V
BR(DSS)
= f(T
j
); I
D
= 1 mA
parameter: I
D
15 Typ. gate charge 16 Gate charge waveforms
V
GS
= f(Q
gate
); I
D
= 50 A pulsed
parameter: V
DD
V
GS
Q
gate
V
gs(th)
Q
g(th)
Q
gs
Q
gd
Q
sw
Q
g
90
95
100
105
110
115
-55 -15 25 65 105 145
T
j
[°C]
V
BR(DSS)
[V]
20 V
80 V
0
1
2
3
4
5
6
7
8
9
10
0 10 20 30 40 50
Q
gate
[nC]
V
GS
[V]
50 A
25 A
12.5 A
0
100
200
300
400
500
600
25 75 125 175
T
j
[°C]
E
AS
[mJ]
Rev. 1.2 page 7 2011-10-06
IPD50N10S3L-16
Published by
81726 Munich, Germany
©
Infineon Technologies AG 2008
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions
or characteristics. With respect to any examples or hints given herein,
any typical values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including
without limitation warranties of non‑infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices please
contact your nearest Infineon Technologies Office (
www.infineon.com
).
Warnings
Due to technical requirements components may contain dangerous substances. For information
on the types in question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the
express written approval of Infineon Technologies, if a failure of such components can reasonably
be expected to cause the failure of that life-support device or system, or to affect the safety or
effectiveness of that device or system. Life support devices or systems are intended to be
implanted in the human body, or to support and/or maintain and sustain and/or protect human life.
If they fail, it is reasonable to assume that the health of the user or other persons may be
endangered.
Rev. 1.2 page 8 2011-10-06
IPD50N10S3L-16
Revision History
Version
1.1
1.1
1.1
1.2
Changes
Page 1: VGS changed from ±16V
to ±20V
Page 3: Footnote 2) added
Page 1: EAS changed from 264mJ
to 330mJ
Idss typ changed from 1µA to
0.1µA
Date
08.04.2008
08.04.2008
09.04.2008
06.03.2011
Rev. 1.2 page 9 2011-10-06

IPD50N10S3L16ATMA1

Mfr. #:
Manufacturer:
Infineon Technologies
Description:
MOSFET N-CH 100V 50A TO252-3
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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