DXT2012P5-13

P1-P3 P4-P6 P7-P7

DXT2012P5

Document number: DS32070 Rev. 2 - 2

4 of 7

www.diodes.com

March 2010

© Diodes Incorporated

DXT2012P5

PowerDI is a registered trademark of Diodes

ADVANCE INFORMATION

A

Product Line o

f

Diodes Incorporated

Electrical Characteristics @T

A

= 25°C unless otherwise specified

Characteristic Symbol Min Typ Max Unit Test Condition

Collector-Base Breakdown Voltage

V

(

BR

)

CBO

-100 -120

−

V

I

C

= -100μA

Collector-Emitter Breakdown Voltage (Note 7)

V

(

BR

)

CEO

-60 -80

−

V

I

C

= -10mA

Emitter-Base Breakdown Voltage

V

(

BR

)

EBO

-7 -8.1

−

V

I

E

= -100μA

Collector Cutoff Current

I

CBO

−

<1

−

-20

-0.5

nA

μA

V

CB

= -80V

V

CB

= -80V, T

amb

= 100 °C

Collector Cutoff Current

I

CER

R≤1kΩ

−

<1

−

-20

-0.5

nA

μA

V

CB

= -80V

V

CB

= -80V, T

amb

= 100 °C

Emitter Cutoff Current

I

EBO

−

<1 -10 nA

V

EB

= -6V

Collector-Emitter Saturation Voltage (Note 7)

V

CE(sat)

−

−

−

−

-15

-55

-90

-195

-25

-70

-120

-250

mV

I

C

= -0.1A, I

B

= -10mA

I

C

= -1A, I

B

= -100mA

I

C

= -2A, I

B

= -200mA

I

C

= -5A, I

B

= -500mA

Base-Emitter Saturation Voltage (Note 7)

V

BE

(

sat

)

−

-1030 -1150 mV

I

C

= -5A, I

B

= -500mA

Base-Emitter Turn-On Voltage (Note 7)

V

BE

(

on

)

−

-920 -1020 mV

V

CE

= -1V, I

C

= -5A

DC Current Gain (Note 7)

h

FE

100

100

45

10

250

200

90

25

−

300

−

−

−

V

CE

= -1V, I

C

= -10mA

V

CE

= -1V, I

C

= -2A

V

CE

= -1V, I

C

= -5A

V

CE

= -1V, I

C

= -10A

Transition Frequency

f

T

−

120

−

MHz

V

CE

= -10V, I

C

= -100mA,

f = 50MHz

Output Capacitance

C

obo

−

48

−

pF

V

CB

= -10V, f = 1MHz

Switching Times

t

on

t

off

−

−

39

370

−

−

ns

V

CC

= 10V, I

C

= 1A,

I

B1

= I

B2

= -100mA

Notes: 7. Pulse Test: Pulse width ≤300μs. Duty cycle ≤2.0%.

DXT2012P5

Document number: DS32070 Rev. 2 - 2

5 of 7

www.diodes.com

March 2010

© Diodes Incorporated

DXT2012P5

PowerDI is a registered trademark of Diodes

ADVANCE INFORMATION

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Product Line o

f

Diodes Incorporated

Typical Characteristic

1m 10m 100m 1 10

10m

100m

1

1m 10m 100m 1 10

0.0

0.1

0.2

0.3

0.4

0.5

1m 10m 100m 1 10

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1m 10m 100m 1 10

0.4

0.6

0.8

1.0

1.2

1.4

1m 10m 100m 1 10

0.4

0.6

0.8

1.0

1.2

1.4

0

50

100

150

200

250

300

V

CE(SAT)

v I

C

Tamb=25°C

I

C

/I

B

=50

I

C

/I

B

=20

I

C

/I

B

=10

- V

CE(SAT)

(V)

- I

C

Collector Current (A)

V

BE(SAT)

v I

C

I

C

/I

B

=10

100°C

25°C

-55°C

- V

CE(SAT)

(V)

- I

C

Collector Current (A)

h

FE

v I

C

V

CE

=1V

-55°C

25°C

100°C

Normalised Gain

- I

C

Collector Current (A)

25°C

V

CE(SAT)

v I

C

I

C

/I

B

=10

100°C

-55°C

- V

BE(SAT)

(V)

- I

C

Collector Current (A)

V

BE(ON)

v I

C

V

CE

=1V

100°C

25°C

-55°C

- V

BE(ON)

(V)

- I

C

Collector Current (A)

Typical Gain (h

FE

)

DXT2012P5

Document number: DS32070 Rev. 2 - 2

6 of 7

www.diodes.com

March 2010

© Diodes Incorporated

DXT2012P5

PowerDI is a registered trademark of Diodes

ADVANCE INFORMATION

A

Product Line o

f

Diodes Incorporated

Package Outline Dimensions

Suggested Pad Layout

PowerDI

®

5

Dim Min Max

A 1.05 1.15

A2 0.33 0.43

b1 0.80 0.99

b2 1.70 1.88

D 3.90 4.05

D2 3.054 Typ

E 6.40 6.60

e 1.84 Typ

E1 5.30 5.45

E2 3.549 Typ

L 0.75 0.95

L1 0.50 0.65

W 1.10 1.41

All Dimensions in mm

Dimensions Value (in mm)

Z 6.6

X1 1.4

X2 3.6

Y1 0.8

Y2 4.7

C 3.87

E1 0.9

Z

C

X2

E1

X1

Y1

Y2

E

E1

b1

A

A2

A2

D

b2

b1

e

D2

L

E2

L1

W

P1-P3 P4-P6 P7-P7

DXT2012P5-13

Mfr. #:

Buy DXT2012P5-13

Manufacturer:

Diodes Incorporated

Description:

Bipolar Transistors - BJT BIPOLAR TRANS,PNP 60V,-5.5A

Lifecycle:

New from this manufacturer.

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DXT2012P5-13